T. Ohashi

Mechanism of Dynamic Bias Temperature Instability in p- and nMOSFETs: The Effect of Pulse Waveform

H. Miyake, Shiyang Zhu, T. Ohashi, 2006, IEEE Transactions on Electron Devices.

Pulse waveform dependence on AC bias temperature instability in pMOSFETs

A. Nakajima, Shiyang Zhu, T. Ohashi, 2005, IEEE Electron Device Letters.

Abnormal enhancement of interface trap generation under dynamic oxide field stress at MHz region

Shiyang Zhu, A. Nakajima, T. Ohashi, 2005 .

Atomic Layer-deposited Si-nitride/SiO/sub 2/ stack gate dielectrics for future high-speed DRAM with enhanced reliability

A. Nakajima, S. Yokoyama, Shiyang Zhu, 2005, IEEE Electron Device Letters.

Influence of bulk bias on negative bias temperature instability of p-channel metal-oxide-semiconductor field-effect transistors with ultrathin SiON gate dielectrics

Shiyang Zhu, A. Nakajima, T. Ohashi, 2006 .

Improvement in Mobility and Negative-Bias Temperature Instability in Metal–Oxide–Semiconductor Field-Effect Transistors with Atomic-Layer-Deposited Si–Nitride/SiO2 Stack Dielectrics

Shiyang Zhu, A. Nakajima, T. Ohashi, 2007 .

Enhancement of BTI degradation in pMOSFETs under high-frequency bipolar gate bias

H. Miyake, T. Ohashi, A. Nakajima, 2005, IEEE Electron Device Letters.

Interface trap and oxide charge generation under negative bias temperature instability of p-channel metal-oxide-semiconductor field-effect transistors with ultrathin plasma-nitrided SiON gate dielectrics

Anri Nakajima, Shiyang Zhu, Shiyang Zhu, 2005 .