Min-Ki Na

Investigation of Device Performance and Negative Bias Temperature Instability of Plasma Nitrided Oxide in Nanoscale p-Channel Metal–Oxide–Semiconductor Field-Effect Transistor's

H. Lee, Ooksang Yoo, I. Han, 2008 .

Carrier transport mechanism in La-incorporated high-k dielectric/metal gate stack MOSFETs

H. Lee, B. Lee, C. Kang, 2011 .

Comparison of La-based high-k dielectrics: HfLaSiON and HfLaON

H. Lee, Ga-Won Lee, B. Lee, 2009 .

Characterization of device performance and reliability of high performance Ge-on-Si field-effect transistor

H. Lee, Jungwoo Oh, P. Majhi, 2011 .

Effect of Si capping layer on the interface quality and NBTI of high mobility channel Ge-on-Si pMOSFETs

H. Lee, B. Lee, C. Kang, 2009 .

Effect of Si interlayer thickness and post-metallization annealing on Ge MOS capacitor on Ge-on-Si substrate

B. H. Lee, H. Lee, C. Kang, 2008 .

A comprehensive and comparative study of interface and bulk characteristics of nMOSETs with la-incorporated high-k dielectrics

G. Bersuker, H. Lee, B. Lee, 2008, 2008 IEEE International Electron Devices Meeting.

Epitaxial growth and diffusion characteristics analysis of vertical thin poly-Si channel transfer gate structured pixels for 3D CMOS image sensor

Kyung-Hwan Kim, Dong-Kyu Lee, Pyong-Su Kwag, 2017, 2017 47th European Solid-State Device Research Conference (ESSDERC).