Yong-Goo Kim

Investigation of Device Performance and Negative Bias Temperature Instability of Plasma Nitrided Oxide in Nanoscale p-Channel Metal–Oxide–Semiconductor Field-Effect Transistor's

H. Lee, Ooksang Yoo, I. Han, 2008 .

Co-Induced Low-Temperature Silicidation of Ni Germanosilicide Using NiPt Alloy and the Effect of Ge Ratio on Thermal Stability

H. Lee, Yong-Jin Kim, J. Yun, 2007, IEEE Transactions on Nanotechnology.

Thermal Stability Improvement of the Ni Germano-silicide formed by a novel structure Ni/Co/TiN using 2-step RTP for Nano-Scale CMOS Technology

Jeong-Gun Lee, Yong-Goo Kim, Hi-Deok Lee, 2004 .

Study of Abnormal Oxidation of Ni-Germanosilicide by High Temperature Post-Silicidation Annealing(Session A3 Si Materails and Process)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))

Jeong-Gun Lee, Yong-Goo Kim, Hi-Deok Lee, 2004 .

Study of Ni-germano Silicide Thermal Stability for Nano-scale CMOS Technology

H. Lee, Yong-Jin Kim, J. Yun, 2004 .

Abnormal oxidation of NiSi formed on arsenic-doped substrate

H. Lee, J. Yun, Soon-Young Oh, 2004 .

On-chip charge pumping method for characterization of interface states of ultra thin gate oxide in nano CMOS technology

H. Lee, Kyungmin Kim, I. Cho, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..