N. E. Moiseiwitsch

Optimisation of BF2 implanted pnp polysilicon emitter bipolar transistors using rapid thermal annealing

N. E. Moiseiwitsch, P. Ashbum, 1993, ESSDERC '93: 23rd European solid State Device Research Conference.

Behavior and effects of fluorine in annealed n+ polycrystalline silicon layers on silicon wafers

N. E. Moiseiwitsch, P. Ashburn, G. Booker, 2000 .

Increased current gain and reduced emitter resistance in F-implanted, low thermal budget polysilicon emitters for SiGe HBTs

N. E. Moiseiwitsch, P. Ashburn, G. Booker, 1996, Proceedings of the 1996 BIPOLAR/BiCMOS Circuits and Technology Meeting.

The benefits of fluorine in pnp polysilicon emitter bipolar transistors

N. E. Moiseiwitsch, P. Ashburn, 1994 .

Epitaxial regrowth of n+ polycrystalline silicon at 850 °C, induced by fluorine implantation

N. E. Moiseiwitsch, P. Ashburn, G. Booker, 1995 .

TEM structural studies of polysilicon emitter bipolar materials and devices: increased interfacial oxide break-up and polysilicon regrowth and decreased emitter resistance by fluorine implantation

N. E. Moiseiwitsch, P. Ashburn, G. Booker, 1998 .