M. Tsujimura

Phosphorus ion implantation in silicon nanocrystals embedded in SiO2

N. Fukata, S. Hishita, K. Murakami, 2009 .

Impact of Al Doping Concentration at Channel Region on Mobility and Threshold Voltage Instability in 4H-SiC Trench N-MOSFETs

H. Fujiwara, K. Kutsuki, T. Onishi, 2016 .

Electronic States of P Donors in Si Nanocrystals Embedded in Amorphous SiO2 Layer Studied by Electron Spin Resonance: Hydrogen Passivation Effects

Naoki Fukata, Kouichi Murakami, Noriyuki Uchida, 2009 .

Isotope Effect of Penetration of Hydrogen and Deuterium into Silicon through Si/SiO2 Interface

M. Kitajima, N. Fukata, K. Ishioka, 2009 .

Electrical and physical characterizations of the effects of oxynitridation and wet oxidation at the interface of SiO2/4H-SiC(0001) and

K. Fukuda, H. Shiomi, H. Kitai, 2016 .