D. Vandenhoudt

发表

Investigation of the defect structure of thin single‐crystalline CoSi2 (B) films on Si(111) by transmission electron microscopy

H. Känel, C. Bulle-lieuwma, D. Vandenhoudt, 1993 .

Microstructure of buried CoSi2 layers formed by high‐dose Co implantation into (100) and (111) Si substrates

C. Bulle-lieuwma, D. Vandenhoudt, A. H. V. Ommen, 1991 .

Ion beam synthesis of cobalt silicide: effect of implantation temperature

C. Bulle-lieuwma, D. Vandenhoudt, Jozef J M Ottenheim, 1991 .

Nondestructive Thin Film Defect Analysis of Silicon‐on‐Insulator Layers Made by Zone‐Melt Recrystallization and Wafer Bonding

A. D. Kock, J. Haisma, M. Theunissen, 1990 .

Investigation of the atomic interface structure of mesotaxial Si/CoSi2(100) layers formed by high-dose implantation

C. Bulle-lieuwma, D. Vandenhoudt, A. D. Jong, 1991 .

TEM analysis of voids in UHV-deposited amorphous Si layers used for lateral solid phase epitaxial growth

M. Theunissen, C. Bulle-lieuwma, D. Gravesteijn, 1992 .

Ion-beam synthesis of a Si/β-FeSi2/Si heterostructure

D. J. Oostra, C. Bulle-lieuwma, D. Vandenhoudt, 1991 .

Experimental Study of Diffusion and Interface Segregation of P in an LPCVD Si‐Carbon Emitter Structure

M. Theunissen, P. Zalm, D. Vandenhoudt, 1995 .

Pulsed‐laser crystallization of amorphous silicon layers buried in a crystalline matrix

P. Stolk, A. Polman, W. Sinke, 1990 .

Epitaxial explosive crystallization of amorphous silicon

P. Stolk, A. Polman, W. Sinke, 1989 .

High quality AlxGa1-x-yInyP alloys grown by MOVPE on (311)B GaAs substrates

C. Bulle-lieuwma, A. Valster, C. Liedenbaum, 1991 .

Can carbon-implanted silicon be applied as wide-bandgap emitter?

D. J. Oostra, C. Bulle-lieuwma, P. Zalm, 1996 .

Low temperature synthesis of Ge nanocrystals in SiO2

V. Craciun, I. Boyd, A. Reader, 1994 .

MICROSTRUCTURE OF OXIDIZED LAYERS FORMED BY THE LOW-TEMPERATURE ULTRAVIOLET-ASSISTED DRY OXIDATION OF STRAINED SI0.8GE0.2 LAYERS ON SI

Ian W. Boyd, Valentin Craciun, A. H. Reader, 1994 .