V. Hornback

Electron-Cyclotron-Resonance Plasma Deposition of Carbon onto Silicon

J. Pankove, J. Goral, S. Sritharan, 1989 .

Process Characterization and Control of Polycrystalline SiGe as the Gate Electrode in CMOS Fabrication

Hong Lin, Shi-Wei Gu, V. Hornback, 2005 .

Method of increasing gate nitridation and its impact on CMOS devices

V. Gopinath, A. Kamath, Y. Le, 2003, Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765).

Effect of nitrogen incorporation on PMOS negative bias temperature instability in ultrathin oxi-nitrides

V. Gopinath, E. Li, S. Prasad, 2003, IEEE International Integrated Reliability Workshop Final Report, 2003.

Impact of the interaction between nitrogen implant and NO anneal on narrow-width transistors

V. Gopinath, A. Kamath, Y. Le, 2003, IEEE Electron Device Letters.

Deposition and Characterization of Polycrystalline Si1 − x Ge x Films for CMOS Transistors Gate Electrode Applications

Joyce C. Lin, V. Gopinath, E. Li, 2005 .

W deposition and titanium fluoride formation during WF6 reduction by Ti: Reaction path and mechanisms

Verne Hornback, D. J. Allman, Leslie H. Allen, 1999 .

Gas‐phase transport of WF6 through annular nanopipes in TiN during chemical vapor deposition of W on TiN/Ti/SiO2 structures for integrated circuit fabrication

G. Ramanath, J. Greene, L. Allen, 1996 .