R. Takizawa

Donor‐related microdefects at surface of denuded zone in Czochralski‐grown silicon

A. Ohsawa, R. Takizawa, K. Honda, 1983 .

New oxygen donors formed at 700 °C in silicon

A. Ohsawa, R. Takizawa, K. Honda, 1983 .

Influence of carbon and oxygen on donor formation at 700 °C in Czochralski‐grown silicon

A. Ohsawa, A. Shibatomi, R. Takizawa, 1982 .

Improvements of trench capacitor characteristics by pre-oxidation surface cleaning with HNO/sub 3/-HF-H/sub 2/O solution

A. Ohsawa, R. Takizawa, K. Honda, 1988, Technical Digest., International Electron Devices Meeting.

Instrument measuring temperature dependence of minority‐carrier lifetime without contact

A. Ohsawa, R. Takizawa, K. Honda, 1983 .

High proton polarization in crystalline naphthalene by dynamic nuclear polarization with laser excitation at room temperature and liquid nitrogen temperature

H. Shimizu, A. Masaike, T. Yabuzaki, 1995 .

Voltammetry at a trioctylphosphine oxide-coated glassy carbon electrode and its use for the determination of trace uranyl ions after preconcentration

K. Izutsu, Toshio Nakamura, R. Takizawa, 1983 .

Degradation of metal-oxide-semiconductor devices caused by iron impurities on the silicon wafer surface

T. Nakanishi, A. Ohsawa, R. Takizawa, 1987 .