M. Hurt

Enhancement of Schottky barrier height in heterodimensional metal-semiconductor contacts

M. Shur, T. Ytterdal, W. Peatman, 1997 .

Sub-Half-Micrometer Width 2-D

M. Shur, T. Ytterdal, W. Peatman, 1996 .

Ion-implanted 0.4 /spl mu/m wide 2-D MESFET for low power electronics

M. Shur, T. Ytterdal, B. Moon, 1996 .

High-temperature characteristics of 2-D MESFETs

M. Shur, T. Ytterdal, W. Peatman, 1996, IEEE Electron Device Letters.

Heterodimensional technology for ultra low power electronics

M. Shur, T. Ytterdal, W. Peatman, 1995, Proceedings of ISSE'95 - International Symposium on Signals, Systems and Electronics.

Novel heterodimensional diodes and transistors

M. Hurt, W.C.B. Peatman, Michael Shur, 1995 .

Modelling the effects of confinement on the glass transition temperature and segmental mobility

D. Kranbuehl, R. Knowles, M. Hurt, 2003 .

A scaleable, radiation hardened shallow trench isolation

J. Maimon, Frederick T. Brady, J. D. Maimon, 1999 .

Heterodimensional field effect transistors for ultra low power applications

W.C.B. Peatman, M. Shur, Jian-Qiang Lu, 1998, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260).