G. Naresh-Kumar

发表

Reprint of: Electron channelling contrast imaging for III-nitride thin film structures

B. Hourahine, R. Martin, P. Edwards, 2016 .

Electron channelling contrast imaging for III-nitride thin film structures

B. Hourahine, R. Martin, P. Edwards, 2016 .

Diffraction effects and inelastic electron transport in angle‐resolved microscopic imaging applications

A. Wilkinson, G. Nolze, A. Winkelmann, 2017, Journal of microscopy.

Nanoscale fissure formation in AlxGa1–xN/GaN heterostructures and their influence on Ohmic contact formation

P. Parbrook, H. Li, C. Trager-Cowan, 2017 .

Structural and luminescence imaging and characterisation of semiconductors in the scanning electron microscope

M. Kneissl, M. Weyers, P. Parbrook, 2020, Semiconductor Science and Technology.

Determining GaN Nanowire Polarity and its Influence on Light Emission in the Scanning Electron Microscope.

B. Hourahine, R. Martin, R. Martin, 2019, Nano letters.

Scanning electron microscopy as a flexible technique for investigating the properties of UV-emitting nitride semiconductor thin films

M. Kneissl, M. Weyers, Tao Wang, 2019, Photonics Research.

Vespucci, S. and Naresh-Kumar, G. and Trager-Cowan, C. and Mingard, K. P. and Maneuski, D. and O'Shea, V. and Winkelmann, A. (2017) Diffractive triangulation of radiative point sources. Applied Physics

V. O’Shea, K. Mingard, A. Winkelmann, 2018 .

Stress distribution of GaN layer grown on micro-pillar patterned GaN templates

M. Sopanen, S. Nagarajan, H. Lipsanen, 2013 .

Quantitative imaging of anti-phase domains by polarity sensitive orientation mapping using electron backscatter diffraction

A. Wilkinson, G. Nolze, S. Nagarajan, 2017, Scientific Reports.

Optical and structural properties of GaN epitaxial layers on LiAlO2 substrates and their correlation with basal-plane stacking faults

V. N. Pavlovskii, G. P. Yablonskii, A. Vescan, 2016 .

Spatially-resolved optical and structural properties of semi-polar $$\mathrm{(11}\bar{2}\mathrm{2)}$$(112¯2) AlxGa1−xN with x up to 0.56

Tao Wang, J. Bai, R. Martin, 2017, Scientific reports.

Spatially-resolved optical and structural properties of semi-polar \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\ma

Tao Wang, J. Bai, R. Martin, 2017, Scientific Reports.

Subgrain structure and dislocations in WC-Co hard metals revealed by electron channelling contrast imaging

B. Hourahine, K. Mingard, A. Winkelmann, 2020 .

Advances in electron channelling contrast imaging and electron backscatter diffraction for imaging and analysis of structural defects in the scanning electron microscope

M. Kneissl, M. Weyers, P. Parbrook, 2020, IOP Conference Series: Materials Science and Engineering.

Correlation between deep-level defects and functional properties of β-(SnxGa1-x)2O3 on Si photodetectors

R. Martin, W. Schoenfeld, P. Edwards, 2021, Journal of Applied Physics.

High Figure‐of‐Merit Gallium Oxide UV Photodetector on Silicon by Molecular Beam Epitaxy: A Path toward Monolithic Integration

S. Seal, T. Sakthivel, R. Martin, 2020, Advanced Photonics Research.

Origin of Red Emission in β‐Ga2O3 Analyzed by Cathodoluminescence and Photoluminescence Spectroscopy

R. Martin, K. Sasaki, A. Kuramata, 2020, physica status solidi (b).

Metrology of crystal defects through intensity variations in secondary electrons from the diffraction of primary electrons in a scanning electron microscope.

K. Mingard, R. Martin, P. Edwards, 2020, Ultramicroscopy.

behavior semipolar (101¯1) InGaN/GaN “bow-tie” structures on patterned Si substrates

K. Thonke, Tao Wang, J. Bai, 2020 .

Imaging basal plane stacking faults and dislocations in (11-22) GaN using electron channelling contrast imaging

Tao Wang, L. Jiu, Y. Gong, 2018, Journal of Applied Physics.

Dislocation contrast in electron channelling contrast images as projections of strain-like components

B. Hourahine, K. Mingard, E. Pascal, 2018 .

Rapid nondestructive analysis of threading dislocations in wurtzite materials using the scanning electron microscope.

A. Wilkinson, P. Parbrook, B. Hourahine, 2012, Physical review letters.

Electron channeling contrast imaging studies of nonpolar nitrides using a scanning electron microscope

A. Vescan, K. Wang, B. Hourahine, 2013 .

Imaging and identifying defects in nitride semiconductor thin films using a scanning electron microscope

M. Tordjman, P. Parbrook, B. Hourahine, 2012 .

Vilalta-Clemente, A. and Naresh-Kumar, G. and Nouf-Allehiani, M. and Gamarra, P. and di Forte-Poisson, M.A. and Trager-Cowan, C. and Wilkinson, A.J. (2017) Cross-correlation based high resolution electron backscatter diffraction and electron channelling contrast imaging for strain mapping and disloc

A. Wilkinson, C. Trager-Cowan, A. Vilalta‐Clemente, 2018 .

Cross-correlation based high resolution electron backscatter diffraction and electron channelling contrast imaging for strain mapping and dislocation distributions in InAlN thin films

A. Wilkinson, M. Forte-Poisson, C. Trager-Cowan, 2017 .

Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistors

M. Kneissl, G. Patriarche, P. Ruterana, 2014 .

Coincident Electron Channeling and Cathodoluminescence Studies of Threading Dislocations in GaN

C. Humphreys, B. Hourahine, R. Martin, 2013, Microscopy and Microanalysis.

Applications of electron channeling contrast imaging for characterizing nitride semiconductor thin films

P. Parbrook, B. Hourahine, A. Day, 2012, Microscopy and Microanalysis.

Luminescence behavior of semipolar ( 10 1 ¯ 1 ) InGaN/GaN “bow-tie” structures on patterned Si substrates

K. Thonke, Tao Wang, J. Bai, 2020 .

Spatial clustering of defect luminescence centers in Si-doped low resistivity Al0.82Ga0.18N

M. Kneissl, M. Weyers, R. Martin, 2015 .

AlN overgrowth of nano-pillar-patterned sapphire with different offcut angle by metalorganic vapor phase epitaxy

M. Kneissl, M. Bickermann, C. Hartmann, 2020, Journal of Crystal Growth.

Design and fabrication of enhanced lateral growth for dislocation reduction in GaN using nanodashes

Alexander Satka, J. Priesol, Philip A. Shields, 2017 .

Materials Science in Semiconductor Processing

B. Hourahine, C. Trager-Cowan, J. Bruckbauer, 2016 .

Non-destructive imaging of residual strains in GaN and their effect on optical and electrical properties using correlative light–electron microscopy

B. Hourahine, R. Martin, T. Batten, 2022, Journal of Applied Physics.

Digital direct electron imaging of energy-filtered electron backscatter diffraction patterns

V. O’Shea, K. Mingard, D. Maneuski, 2015 .