S. Müller

发表

Thick GaN layers grown by hydride vapor-phase epitaxy: hetero- versus homo-epitaxy

M. Boćkowski, J. Weyher, S. Porowski, 2003 .

Chemical polishing of bulk and epitaxial GaN

J. Weyher, I. Grzegory, S. Porowski, 1997 .

Assessment of layer composition and thickness in AlGaN/GaN HEMT structures by spectroscopic ellipsometry

K. Köhler, J. Wagner, M. Baeumler, 2005 .

Selective Raman modes and strong photoluminescence of gallium selenide flakes on sp2 carbon

D. Zahn, R. Bratschitsch, R. D. Rodriguez, 2014 .

Morphological and structural characteristics of homoepitaxial GaN grown by metalorganic chemical vapour deposition (MOCVD)

P. D. Brown, P. Larsen, C. Boothroyd, 1999 .

Material Development for Improved 1eV(GaIn)(NAs) Solar Cell Structures

Frank Dimroth, Wolfgang Stolz, Kerstin Volz, 2007 .

Orthodox etching of HVPE-grown GaN

Grzegorz Nowak, Richard J. Molnar, Izabella Grzegory, 2007 .

Progress in the layer thickness determination of AlGaAs/GaAs heterostructures using selective etching and AFM imaging of the (110) cleavage planes

J. Weyher, W. Jantz, S. Müller, 1997 .

Nanoscale optical and electrical characterization of horizontally aligned single-walled carbon nanotubes

Haibo Yu, S. Schulz, R. D. Rodriguez, 2012, Nanoscale Research Letters.

Analysis of peculiar structural defects created in GaAs by diffusion of copper

J. Weyher, C. Frigeri, P. Hiesinger, 2000 .