A. Lilak

Modeling of Extended Defects in Silicon

M. Law, K. Jones, J. W. Xu, 1996 .

A physics-based modeling approach for the simulation of anomalous boron diffusion and clustering behaviors

M. Giles, M. Law, S. Earles, 1997, International Electron Devices Meeting. IEDM Technical Digest.

The effect of dose rate on interstitial release from the end-of-range implant damage region in silicon

P. Chi, D. Simons, M. Law, 1997 .

3-D Self-aligned Stacked NMOS-on-PMOS Nanoribbon Transistors for Continued Moore’s Law Scaling

G. Dewey, J. Kavalieros, M. Metz, 2020, 2020 IEEE International Electron Devices Meeting (IEDM).

Process modeling for advanced device technologies

Patrick H. Keys, Rishabh Mehandru, P. Fleischmann, 2013, Journal of Computational Electronics.

Process modeling for advanced device technologies

C. Weber, M. Stettler, M. Giles, 2013, Journal of Computational Electronics.

EVOLUTION OF 311 TYPE DEFECTS IN BORON-DOPED STRUCTURES : EXPERIMENTAL EVIDENCE OF BORON-INTERSTITIAL CLUSTER FORMATION

M. Law, K. Jones, S. Earles, 1999 .

A Study of Boron Clustering Transients and Mechanisms in Doped Silicon

M. Law, A. Lilak, K. Jones, 2000 .