G. Morgenstern

发表

Cu precipitation in oxidized wafers with and without a Ge_xSi_1−x heteroepitaxial layer

H. Richter, G. Kissinger, G. Morgenstern, 1993 .

The gettering efficiency of a direct bonded interface

H. Richter, G. Kissinger, G. Morgenstern, 1993 .

On RTA‐Indueed Deep Levels in Silicon P+N‐Diodes

K. Tittelbach-Helmrich, K. Schmalz, G. Morgenstern, 1991 .

Internal oxidation of vacancy agglomerates in Czochralski silicon wafers during high-temperature anneals

H. Richter, J. Vanhellemont, D. Gräf, 1998 .

Radially non-uniform interaction of nitrogen with silicon wafers

M. Kittler, A. Fischer, V. Akhmetov, 2008 .

Strain compensation in ternary Si1 − x − yGexBy films

B. Tillack, P. Zaumseil, D. Krüger, 1995 .

Copper silicide precipitation influenced by the strain of a Ge0.02Si0.98 heteroepitaxial layer

H. Richter, G. Kissinger, G. Morgenstern, 1994 .

Sharp boron doping within thin SiGe layer by rapid thermal chemical vapour deposition

B. Tillack, P. Zaumseil, D. Krüger, 1995 .

Defect Growth Interruption Phenomena Related to Impurity Atoms in Growing Multilayer Si-Si 1−x Ge x Systems Deposited by APCVD

M. Methfessel, D. Krüger, G. Lippert, 1993 .

Defect generation on mechanical surface defects before and after the oxidation (I). TEM investigations on the nucleation of oxidation stacking faults at mechanically induced weak surface defects

G. Weidner, G. Morgenstern, 1987 .

Influence of dislocation density on recombination at grain boundaries in multicrystalline silicon

Martin Kittler, Winfried Seifert, G. Morgenstern, 1993 .

Annealing‐Induced Changes of Recombination in Cast Polycrystalline Silicon

M. Kittler, W. Seifert, G. Morgenstern, 1993 .

Grown‐in Oxide Precipitate Nuclei in Czochralski Silicon Substrates and Their Role in Device Processing

H. Richter, J. Vanhellemont, W. Ammon, 1999 .

STRAIN COMPENSATION IN SI1-XGEX BY HEAVY BORON DOPING

B. Tillack, P. Zaumseil, D. Krüger, 1995 .

CHARACTERIZATION OF POLYCRYSTALLINE SILICON BY EBIC

M. Kittler, W. Seifert, G. Morgenstern, 1991 .

Iron gettering and doping in silicon due to MeV carbon implantation

P. Gaworzewski, W. Skorupa, K. Schmalz, 1993 .

Investigations of possibilities for cleaning of aluminium bronze for the recycling of cast alloys

M. Stelter, G. Morgenstern, 2007 .

Defect Engineering and Gettering in a High‐voltage Substrate Technolgy

K. Tittelbach-Helmrich, K. Schmalz, G. Kissinger, 1992 .

Stepwise equilibrated graded GexSi1−x buffer with very low threading dislocation density on Si(001)

H. Richter, T. Morgenstern, G. Kissinger, 1995 .