J. Bonnet

发表

Quantitative correction of backscattering in Auger electron spectroscopy of thin films

J. Bonnet, G. Levêque, J. Bonnet, 1995 .

Synchrotron radiation study of Rb/p-GaSb(110) interface formation and band bending at low temperature

J. Bonnet, P. Soukiassian, K. Hricovini, 1993 .

Development of Structural and Electronic Properties in the Growth of Metals on Semiconductors

M. Abraham, K. Hricovini, G. Lay, 1990 .

Proton residence times in the solid solution phase of the Y—H system studied by quasi-elastic neutron scattering

D. Ross, I. Anderson, J. Bonnet, 1984 .

Observation of surface potential at nanometer scale by electrostatic force microscopy (EFM) with large signals

P. Girard, A. Tahraoui, G. Leveque, 1998 .

Ultrahigh‐vacuum four‐circle diffractometer for grazing incidence x‐ray diffraction on in situ MBE grown III‐V semiconductor surfaces

P. Claverie, J. Massies, J. Frouin, 1989 .

One-dimensional ordering of deuterium in solution in yttrium

D. Ross, O. Schaerpf, I. Anderson, 1987 .

Solid solutions of H and D in yttrium metal

A. Lucasson, J. Bonnet, C. Juckum, 1982 .

Study of the hydrogen solid solution in thulium

J. Daou, J. E. Bonnet, J. N. Daou, 1978 .

The effect of low-temperature electron irradiation on lutetium and its hydrogen solid solutions

J. Daou, P. Vajda, A. Lucasson, 1977 .

The effect of hydrogen solution on the anisotropy of the crystalline properties of rare-earth metals

J. Bonnet, 1976 .

Long Range Diffusion of Hydrogen in Yttrium*

D. Ross, I. Anderson, J. Bonnet, 1989 .

A new behaviour of the interstitial element H or D in solution in rare-earth metal

J. Daou, J. Bonnet, 1974 .

A Study of Hydrogen Site Occupation in the Yttrium-Hydrogen Solid Solution Phase Using Inelastic Neutron Scattering

D. Ross, J. Bonnet, S. Wilson, 1983 .

Recovery of low-temperature electron-irradiated lutetium

J. Daou, P. Vajda, A. Lucasson, 1977 .

Long-range and short-range ordering of hydrogen or deuterium atoms in solid solution in yttrium

D. Faux, D. Ross, I. Anderson, 1987 .

Modifications near the surface owing to hydrogen cycling of the intermetallics LaNi5 and LaNi5−xAlx

J. Esteva, R. Karnatak, P. Dantzer, 1987 .

Rare‐earth dihydride compounds: Lattice thermal expansion and investigation of the thermal dissociation

J. Daou, J. Bonnet, 1977 .

Photoemission investigation of bulk-grown versus epitaxial thin film CoSi2(111) surfaces

C. Pirri, D. Bolmont, P. Wetzel, 1992 .

Insulator-metal phase transitions of alkali atoms on GaAs(001)

R. Belkhou, O. Tereshchenko, A. Taleb-Ibrahimi, 2006 .

Surface semiconductor-metal transition in rare earth hydrides at low temperatures

L. Schlapbach, J. Bonnet, J. Burger, 1987 .

O2/K/Ge(100)2×1 and O2/Cs/Ge(100)2×1 : puzzling behavior of K and Cs in the oxidation of germanium

P. Soukiassian, K. Hricovini, Y. Borensztein, 1993 .

Synchrotron radiation investigation and surface spectroscopy studies of prototypical systems: lead-semiconductor interfaces

K. Hricovini, G. Lay, J. Bonnet, 1990 .

Alkali-Metal-Induced Highest Fermi-Level Pinning Position above Semiconductor Conduction Band Minimum

P. Soukiassian, K. Hricovini, G. Lay, 1994 .

Electronic structure and its dependence on local order for H/Si(111)-(1×1) surfaces

S. Louie, Y. Chabal, X. Blase, 1993 .

Cs‐induced highest EF jump above InAs(110) conduction‐band minimum

P. Soukiassian, K. Hricovini, G. Lay, 1994 .

Low temperature electronic properties of cerium hydrides

L. Schlapbach, H. Rudigier, H. Ott, 1987 .

A photoemission study of ammonia adsorption on Si(100)2 × 1 and Si(111)2 × 1 surfaces

J. Lacharme, L. Kubler, J. Bischoff, 1993 .

Abrupt metal-semiconductor interfaces

M. Abraham, A. Kahn, K. Hricovini, 1991 .

Benzene adsorption on silicon (111) surfaces with different reconstructions: a comparative study by synchrotron radiation photoemission

R. Zanoni, M. Piancastelli, K. Hricovini, 1994 .

Local-order of chemically-prepared GaAs(100) surfaces

R. Belkhou, O. Tereshchenko, A. Terekhov, 2002 .

As and Ga dimers in core‐level spectroscopy of S‐passivated GaAs(001)

J. Martín-Gago, D. Paget, P. Chiaradia, 1996 .

Reactivity, growth mode, and kinetics of the Fermi level pinning at the Ni/GaAs(110) interface

J. Olivier, A. Taleb-Ibrahimi, G. Jézéquel, 1991 .

Photoelectron spectroscopy studies of the formation of the Au-Si(100) interface using synchrotron radiation

K. Hricovini, G. Lay, J. Bonnet, 1989 .

Chemical and photochemical processes in sulfide passivation of GaAs(100): In situ optical study and photoemission analysis

V. Ulin, V. Lantratov, D. Paget, 1998 .

Dangling bond states on HgSe(110) surface

B. Kowalski, B. Orłowski, J. Bonnet, 1994 .

Electronic properties of cleaved (110) and MBE-grown (100) InAs surfaces, clean and covered with an ultra-thin Ag adlayer

J. Kanski, P. Nilsson, K. Hricovini, 1993 .

FIRST STAGE OF THE FORMATION OF SILVER THIN FILMS ON THE As-PASSIVATED Si(111)-(1×1) SURFACE

J. Avila, M. Asensio, Margarita Martín, 2000 .

Multidetection in ultraviolet angle-resolved photoemission

G. Levêque, J. Bonnet, Y. Villachon-Renard, 1992 .

Observation of umklapp and surface bands in photoemission experiment on II–VI materials: A study of Cd0.6Hg0.4Te

D. Bertho, C. Jouanin, G. Levêque, 1993 .

Preparation of clean reconstructed InAs(001) surfaces using HCl/isopropanol wet treatments

O. Tereshchenko, A. Taleb-Ibrahimi, F. Wiame, 2003 .

Chemically prepared well-ordered InP(001) surfaces

E. Placidi, O. Tereshchenko, F. Wiame, 2006 .

Photoelectron diffraction study of Ag growth mediated by an arsenic layer on Si(1 1 1)1 × 1

M. E. Dávila, M. Asensio, J. Bonnet, 2004 .

Structure effects on Schottky barrier heights of Pb/Si and Bi/Si interfaces

A. Kahn, L. Lassabatère, A. Taleb-Ibrahimi, 1991 .

Initial stages of Schottky-barrier formation of Bi/Si(111) and Bi/Si(100) interfaces

A. Kahn, K. Hricovini, G. Lay, 1992 .

Angle-resolved photoemission study of Zn0.15Hg0.85Te: valence band determination

R. Triboulet, D. Ballutaud, Y. Marfaing, 1992 .