R. Rudder

发表

The role of an ultrathin silicon interlayer at the SiO2‐Ge interface

S. Hattangady, R. Markunas, G. Fountain, 1992 .

Single‐crystal diamond plate liftoff achieved by ion implantation and subsequent annealing

J. Posthill, R. Markunas, J. Hunn, 1992 .

Thermal CVD of homoepitaxial diamond using CF/sub 4/ and F/sub 2/

J. Posthill, R. Markunas, R. Rudder, 1989 .

Exposure of Diamond to Atomic Hydrogen: Secondary Electron Emission and Conductivity Effects

R. E. Thomas, J. Posthill, R. Markunas, 1994 .

SECONDARY ELECTRON EMISSION ENHANCEMENT AND DEFECT CONTRAST FROM DIAMOND FOLLOWING EXPOSURE TO ATOMIC HYDROGEN

R. E. Thomas, J. Posthill, R. Markunas, 1994 .

Surface Preparation of Single Crystal C(001) Substrates for Homoepitaxial Diamond Growth

J. Posthill, R. Markunas, D. Malta, 1994 .

Local Bonding in A—Sige Alloy Films

G. Lucovsky, S. Y. Lin, J. Cook, 1985 .

Evidence for the occurrence of subcutaneous oxidation during low temperature remote plasma enhanced deposition of silicon dioxide films

G. Lucovsky, S. Hattangady, R. Markunas, 1989 .

Low hydrogen content silicon nitride deposited at low temperature by novel remote plasma technique

S. Hattangady, R. Markunas, G. Fountain, 1989 .

Plasma enhanced chemical vapor deposition of polycrystalline diamond and diamondlike films

R. Markunas, G. Fountain, D. Vitkavage, 1988 .

High photoconductivity in magnetron sputtered amorphous hydrogenated germanium films

G. Lucovsky, J. Cook, R. Rudder, 1983 .

Photoelectronic Properties of a-Si1-xGex:H Films

G. Lucovsky, J. Cook, R. Rudder, 1985 .

High photoconductivity in dual magnetron sputtered amorphous hydrogenated silicon and germanium alloy films

G. Lucovsky, J. Cook, R. Rudder, 1984 .

Gallium Arsenide Surface Inversion using a Novel Silicon–Silicon Dioxide Insulator Structure

S. Hattangady, R. Markunas, G. Fountain, 1988 .

Thermal desorption from hydrogenated and oxygenated diamond (100) surfaces

R. E. Thomas, R. Markunas, R. Rudder, 1992 .

Etch-delineation of defects in diamond by exposure to an oxidizing flame

D. Malta, J. Posthill, R. Markunas, 1993 .

The role of atomic hydrogen and its influence on the enhancement of secondary electron emission from C(001) surfaces

J. Posthill, R. Markunas, C. Pettenkofer, 1995 .

Influence Of Surface Terminating Species On Electron Emission From Diamond Surfaces

R. E. Thomas, J. Posthill, R. Markunas, 1995 .

Effects of subsurface Na, H and C on CH3 adsorption on Ni(111)

Hong Yang, R. Markunas, J. Whitten, 1992 .

In-Situ Surface Cleaning of Ge(111) and Si(100) for Epitaxial Growth of Ge AT 300°C Using Remote Plasma Enhanced Chemical Vapor Deposition

S. Hattangady, R. Markunas, D. Vitkavage, 1987 .

In situ cleaning of GaAs surfaces using hydrogen dissociated with a remote noble‐gas discharge

S. Hattangady, J. Posthill, R. Markunas, 1990 .

Direct deposition of polycrystalline diamond films on Si(100) without surface pretreatment

R. E. Thomas, J. Posthill, R. Markunas, 1991 .

Carbon and oxygen removal from silicon (100) surfaces by remote plasma cleaning techniques

R. E. Thomas, R. A. Rudder, M. J. Mantini, 1992 .

Thin films of a‐Si1−xGex:H alloys by dual magnetron sputtering in a UHV chamber

G. Lucovsky, J. Cook, R. Rudder, 1985 .

Two-dimensional model of a large area, inductively coupled, rectangular plasma source for chemical vapor deposition

R. E. Thomas, A. E. Robson, J. Giuliani, 1999 .

On the feasibility of growing dilute CxSi1−x epitaxial alloys

S. Hattangady, J. Posthill, R. Markunas, 1990 .

Chemical vapor deposition of diamond films from water vapor rf-plasma discharges

R. E. Thomas, R. Nemanich, J. Posthill, 1992 .

Chemical Vapor Deposition of Diamond Films Using Water:Alcohol:Organic-Acid Solutions

R. E. Thomas, R. Nemanich, J. Posthill, 1992 .

Formation of diamond films from low pressure radio frequency induction discharges

R. E. Thomas, J. Posthill, R. Markunas, 1992 .

GaAs MIS structures with SiO2 using a thin silicon interlayer

S. Hattangady, R. Markunas, D. Vitkavage, 1988 .

Enhancement of Diamond Nucleation by Graphite Fibers Local to Substrate Surfaces in H2 - CH4 rf Discharges.

R. E. Thomas, J. Posthill, R. Markunas, 1991 .

Method of fabricating a free‐standing diamond single crystal using growth from the vapor phase

R. E. Thomas, J. Posthill, R. Markunas, 1996 .

Demonstration of a method to fabricate a large-area diamond single crystal

R. E. Thomas, D. Malta, J. Posthill, 1995 .

Development of Epitaxial, Tiling, and Cutting Processes for a Diamond Single Crystal Wafer Technology

R. E. Thomas, J. Posthill, R. Markunas, 1995 .

Fabrication of a Free-Standing, Synthetic, Single Crystal Diamond Plate Using Ion Implantation and Plasma-Enhanced Chemical Vapor Deposition

R. E. Thomas, J. Posthill, R. Markunas, 1995 .

Effects of oxygen on surface reconstruction of carbon

R. Markunas, J. Whitten, P. Cremaschi, 1994 .

Dense Nucleation of Polycrystalline Diamond Films Using CF4-H2 Low Pressure rf Discharges

R. E. Thomas, D. Malta, J. Posthill, 1991 .

Heteroepitaxial Nucleation and Growth of Ge ON Si(100) Surfaces Using Remote Plasma Enhanced Chemical Vapor Deposition

S. Hattangady, R. Markunas, D. Vitkavage, 1988 .

Remote plasma‐enhanced chemical‐vapor deposition of epitaxial Ge films

R. Markunas, G. Fountain, R. Rudder, 1986 .

Activation energy and mechanism of CO desorption from (100) diamond surface

R. E. Thomas, D. Huang, M. Frenklach, 1993 .

Microstructural and Optical Characterization of GaN Films Grown by PECVD on (0001) Sapphire Substrates

S. Hattangady, R. Nemanich, J. Posthill, 1989 .

Low interface state density SiO2 deposited at 300 °C by remote plasma‐enhanced chemical vapor deposition on reconstructed Si surfaces

S. Hattangady, R. Markunas, G. Fountain, 1988 .

Inversion of n‐Type GaAs Surfaces Using a Silicon‐Silicon Dioxide Insulator Structure

S. Hattangady, R. Markunas, G. Fountain, 1989 .

Interface engineering with pseudormorphic interlayers: Ge metal‐insulator‐semiconductor structures

S. Hattangady, R. Markunas, G. Fountain, 1990 .

Gating of germanium surfaces using pseudomorphic silicon interlayers

R. A. Rudder, S. V. Hattangady, S. Hattangady, 1988 .

Low Temperature Cleaning of Ge and GaAs Surfaces Using Hydrogen Dissociated with a Remote Noble-Gas Discharge

J. Posthill, R. Markunas, M. Mantini, 1989 .

Heteroepitaxial C x Si l−X /Si(100) Metastable Alloys

S. Hattangady, R. Nemanich, J. Posthill, 1990 .

Characterization of epitaxial Ge films grown by remote plasma enhanced chemical vapor deposition on Ge(111) and GaAs(111) substrates

S. Hattangady, J. Posthill, R. Markunas, 1989 .

Process and Surface Characterization of Hydrogen Plasma Cleaning of Si(100)

G. Lucovsky, R. Nemanich, R. Markunas, 1990 .

300° C Processing of Si Using Remote Plasma Techniques for In Situ Cleaning, Epitaxy, and Oxide/Nitride/Oxide Depositions

S. Hattangady, J. Posthill, R. Markunas, 1989 .

Demonstration of an n-channel inversion mode GaAs MISFET

J. Hutchby, S. Hattangady, R. Markunas, 1989, International Technical Digest on Electron Devices Meeting.