T. Bestwick

发表

Reactive ion etching of SiGe alloys using HBr

G. Oehrlein, Ying Zhang, G. Kroesen, 1991 .

Photoluminescence characterization of plasma exposed silicon surfaces

A. Henry, B. Monemar, G. Oehrlein, 1991 .

Interactive effects in the reactive ion etching of SiGe alloys

Gmw Gerrit Kroesen, Gottlieb S. Oehrlein, G. Oehrlein, 1991 .

Tungsten etching mechanisms in CF4/O2 reactive ion etching plasmas

G. Oehrlein, T. Bestwick, 1989 .

SPECTRAL AND SPATIAL DISTRIBUTIONS OF ELECTRON TRAPS ON SEMICONDUCTOR SURFACES

T. Bestwick, M. Welland, Rb Leane, 1988 .

Study of oxygen addition to CF3Br reactive ion etching plasmas: Effects on silicon surface chemistry and etching behavior

G. Oehrlein, P. Jones, J. Corbett, 1989 .

Reactive ion etching of silicon using bromine containing plasmas

Gottlieb S. Oehrlein, G. Oehrlein, T. D. Bestwick, 1990 .

Nonintrusive wafer temperature measurement using in situ ellipsometry

G. Oehrlein, G. Kroesen, T. Bestwick, 1991 .

Studies of the reactive ion etching of SiGe alloys

Gmw Gerrit Kroesen, Gottlieb S. Oehrlein, G. Oehrlein, 1991 .

Selective Dry Etching of Germanium with Respect to Silicon and Vice Versa

M. Jaso, G. Oehrlein, P. Jones, 1991 .

Selective dry etching of silicon with respect to germanium

James W. Corbett, Gottlieb S. Oehrlein, G. Oehrlein, 1990 .

A Study of Luminescent Centers in Reactive‐Ion‐Etched Silicon

O. Awadelkarim, A. Henry, B. Monemar, 1991 .