M. Li

发表

Studies of hydrogen ion beam cleaning of silicon dioxide from silicon using in situ spectroscopic ellipsometry and x‐ray photoelectron spectroscopy

E. Irene, Y. Z. Hu, K. Conrad, 1991 .

Comparison of damage and Si oxidation kinetics resulting from electron cyclotron resonance and distributed electron cyclotron resonance plasma processing

N. Jiang, F. Varnière, M. Hugon, 1995 .

Photoresist modifications by plasma vacuum ultraviolet radiation: The role of polymer structure and plasma chemistry

David B. Graves, Robert L. Bruce, Sebastian Engelmann, 2010 .

Efficient hydrogen and oxygen evolution electrocatalysis by cobalt and phosphorus dual-doped vanadium nitride nanowires

Muhammad-Sadeeq Balogun, M. Li, T. Xiong, 2019, Materials Today Chemistry.

Ellipsometry study of the nucleation of Si epitaxy by electron cyclotron resonance plasma chemical vapor deposition

E. Irene, D. Maher, M. Li, 1995 .

Role of sidewall scattering in feature profile evolution during Cl2 and HBr plasma etching of silicon

M. V. Malyshev, D. B. Graves, Vincent M. Donnelly, 2000 .

Real-time measurements of plasma photoresist modifications: The role of plasma vacuum ultraviolet radiation and ions

David B. Graves, Gottlieb S. Oehrlein, D. Graves, 2012 .

Electron cyclotron resonance plasma process for InP passivation

H. Casey, E. Irene, Yuli Wang, 1993 .

Hardmask charging during Cl2 plasma etching of silicon

D. Graves, M. Li, M. Vyvoda, 1999 .

In situ spectroscopic ellipsometric investigation of argon ion bombardment of single-crystal silicon and silicon dioxide films

E. Irene, M. Li, J. W. Andrews, 1991 .

Electron, ion and vacuum ultraviolet photon effects in 193 nm photoresist surface roughening

David B. Graves, Robert L. Bruce, Gottlieb S. Oehrlein, 2010 .

In situ investigation of temperature and bias dependent effects on the oxide growth of Si and Ge in an electron cyclotron resonance

J. Joseph, E. Irene, M. Li, 1993 .