B. Sun

Extrinsic Base Surface Passivation in Terahertz GaAsSb/InP DHBTs Using InGaAsP Ledge Structures

H. Liu, H. Chang, B. Sun, 2011, IEEE Transactions on Electron Devices.

A high-voltage GaN quasi-vertical metal–insulator–semiconductor Schottky barrier diode on Si with excellent temperature characteristics

Jincheng Zhang, Shenglei Zhao, Zhihong Liu, 2022, Journal of Physics D: Applied Physics.

Schottky barrier height modulation in metal/N-Ge system

S. K. Wang, H. Liu, H. Chang, 2014, 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).

100nm Gate length enhancement-mode In0.4Ga0.6As MOSFETs with InGaP interfacial layer and Al2O3 as gate oxide

S. K. Wang, J. Niu, H. Liu, 2016, 2016 IEEE International Nanoelectronics Conference (INEC).