R. Nakamura

发表

Correlation between Dislocation Density and the Macroscopic Properties of GaN Grown by Metalorganic Vapor Phase Epitaxy.

H. Ota, H. Amano, I. Akasaki, 1999 .

Dual crystallization modes of sputter-deposited amorphous SiGe films

H. Numakura, R. Nakamura, M. Ishimaru, 2020 .

Heteroepitaxy and Characterization of Low-Dislocation-Density GaN on Periodically Grooved Substrates

H. Amano, I. Akasaki, Tetsuya Nakamura, 2000 .

Microscopic Investigation of Al0.43Ga0.57N on Sapphire

H. Amano, I. Akasaki, Takayuki Kashima, 1999 .

Fracture of AlxGa1-xN/GaN Heterostructure –Compositional and Impurity Dependence–

S. Kamiyama, H. Amano, I. Akasaki, 2001 .

High‐Efficiency GaN/AlxGa1—xN Multi‐Quantum‐Well Light Emitter Grown on Low‐Dislocation Density AlxGa1—xN

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2001 .

High Efficiency Uv Emitter Using High Quality GaN/Al x Ga 1−x N Multi-Quantum Well Active Layer

S. Kamiyama, H. Amano, I. Akasaki, 2000 .

Defect and Stress Control of Algan and Fabrication of High-Efficiency Uv-Led

S. Kamiyama, H. Amano, I. Akasaki, 2000 .

Heteroepitaxial Lateral Overgrowth of GaN on Periodically Grooved Substrates: A New Approach for Growing Low-Dislocation-Density GaN Single Crystals

Theeradetch Detchprohm, Isamu Akasaki, Hiroshi Amano, 2001 .

Suppression of phase separation of AlGaN during lateral growth and fabrication of high-efficiency UV-LED on optimized AlGaN

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2002 .