Avid Kamgar

Subthreshold behavior of silicon MOSFETs at 4.2 K

Avid Kamgar, A. Kamgar, 1982 .

Resonance Spectroscopy of Electronic Levels in a Surface Accumulation Layer

P. Kneschaurek, Avid Kamgar, G. Dorda, 1974 .

Delay times in Si MOSFETS in the 4.2–400 K temperature range

R. L. Johnston, Avid Kamgar, A. Kamgar, 1983 .

On the discrepancies between absorption and photoconductivity measurements in silicon inversion layers

D. C. Tsui, Avid Kamgar, D. Tsui, 1977 .

Kinetics of arsenic activation and clustering in high dose implanted silicon

Avid Kamgar, T. T. Sheng, A. Kamgar, 1986 .

Rapid thermal anneal induced effects in polycrystalline silicon gate structures

Avid Kamgar, S. J. Hillenius, S. Hillenius, 1987 .