B. Girault

发表

Determination of absorption coefficients and thermal conductivity of GaAlAs/GaAs heterostructure using a photothermal method.

N. Yacoubi, J. Fesquet, B. Girault, 1986, Applied optics.

Determination of absorption coefficients of thick semiconductor samples using photoacoustic spectroscopy.

J. Fesquet, B. Girault, M. D. Razafindrandriatsimaniry, 1984, Applied optics.

Determination of the five first interband transitions above the lowest indirect band gap of the aluminum antimonide

B. Girault, A. Joullié, A. Zien-Eddine, 1982 .

Liquid phase epitaxy of silicon at very low temperatures

F. Chevrier, G. Bougnot, A. Joullie, 1977 .

Temperature dependence of the L 6 c − Γ 6 c energy gap in gallium antimonide

B. Girault, A. Joullié, A. Z. Eddin, 1981 .

Electrochemical characteristics of NixN thin films deposited by DC and HiPIMS reactive magnetron sputtering

M. Richard-Plouet, D. Gloaguen, P. Jouan, 2019, Thin Solid Films.

Optical investigations of a GaSb-AlSb single quantum well

P. Voisin, L. Lassabatère, C. Allibert, 1987 .

Electrooptical properties of SnO2 spray–GaSe and SnO2 spray–GaTe heterojunctions

B. Girault, L. Gouskov, A. Gouskov, 1978 .

Incompressible Finite Element Methods for Navier-Stokes Equations with Nonstandard Boundary Conditions in R 3

V. Girault, B. Girault, 1988 .