S. Lee

发表

Total Dose and Bias Temperature Stress Effects for HfSiON on Si MOS Capacitors

G. Lucovsky, peixiong zhao, J. Cressler, 2007, IEEE Transactions on Nuclear Science.

Differences Between Charge Trapping States in Irradiated Nano-Crystalline HfO$_{2}$ and Non-Crystalline Hf Silicates

peixiong zhao, D. Fleetwood, J. Felix, 2006, IEEE Transactions on Nuclear Science.

Investigation of the thermal tolerance of silicon-based lateral spin valves

Y. Suzuki, M. Shiraishi, R. Ohshima, 2021, Scientific Reports.

Bulk defects in nano-crystalline and in non-crystalline HfO2-based thin film dielectrics

M. D. Ulrich, Hyungtak Seo, Gerald Lucovsky, 2008 .

Suppression of Ge-O and Ge-N bonding at Ge-HfO2 and Ge-TiO2 interfaces by deposition onto plasma-nitrided passivated Ge substrates: Integration issues Ge gate stacks into advanced devices

S. Lee, Gerald Lucovsky, J. P. Long, 2008, Microelectron. Reliab..

Enhancement of spin signals by thermal annealing in silicon-based lateral spin valves

R. Ohshima, Y. Ando, H. Koike, 2020 .

Interfacial transition regions at germanium/Hf oxide based dielectric interfaces: Qualitative differences between non-crystalline Hf Si oxynitride and nanocrystalline HfO2 gate stacks

J. Lüning, G. Lucovsky, Seung Geol Lee, 2009 .

Rectification and internal photoemission in metal/CVD diamond and metal/CVD diamond/silicon structures

C. W. Hatfield, G. Gildenblat, C. Wronski, 1990 .

Spin-orbit coupling induced by bismuth doping in silicon thin films

R. Ohshima, Y. Ando, S. Dushenko, 2018, Applied Physics Letters.