R. Contreras-Guerrero

发表

AlxIn1−xAsySb1−y alloys lattice matched to InAs(1 0 0) grown by molecular beam epitaxy

M. Holland, M. Passlack, R. Droopad, 2015 .

Optical transitions in AlGaAs/GaAs quantum wires on GaAs(6 3 1) substrates studied by photoreflectance spectroscopy

M. López-López, J. Rojas-Ramírez, R. Contreras-Guerrero, 2010 .

Study of optical properties of GaAsN layers prepared by molecular beam epitaxy

M. Meléndez-Lira, M. López-López, J. Rojas-Ramírez, 2007 .

Photoreflectance study of GaMnAs layers grown by MBE

M. López-López, V. Rangel-Kuoppa, J. Rojas-Ramírez, 2011 .

Investigation of interfacial oxidation control using sacrificial metallic Al and La passivation layers on InGaAs

Hyunchul Kim, R. Wallace, M. López-López, 2012 .

Study of AlGaAs/GaAs quantum wells grown by molecular beam epitaxy on GaAs substrates subjected to different treatments

M. López-López, J. Rojas-Ramírez, L. Zamora-Peredo, 2009 .

Study of the GaAs MBE growth on (6 3 1)-oriented substrates by Raman spectroscopy

M. López-López, J. Rojas-Ramírez, A. G. Rodríguez, 2007 .

Effects of in situ annealing of GaAs(100) substrates on the subsequent growth of InAs quantum dots by molecular beam epitaxy

M. López-López, J. Rojas-Ramírez, I. Martínez-Velis, 2010, Nanotechnology.