F. Yan

External quantum efficiency of Pt/n-GaN Schottky diodes in the spectral range 5¿500nm

Robert E. Vest, Brent Mott, David Franz, 2005 .

Development of Ultra High Sensitivity UV Silicon Carbide Detectors

Jian H. Zhao, P. Alexandrov, C. Stahle, 2006 .

Highly sensitive visible-blind extreme ultraviolet Ni/4H-SiC Schottky photodiodes with large detection area.

Benjawan Kjornrattanawanich, Jian H. Zhao, John Seely, 2006, Optics letters.

Development of ultra-high sensitivity wide-band gap UV-EUV detectors at NASA Goddard Space Flight Center

Laddawan Miko, Sachidananda Babu, Feng Yan, 2005, SPIE Optics + Photonics.

Demonstration of the First 4H-SiC EUV Detector with Large Detection Area

Jian H. Zhao, X. Xin, T. Koeth, 2005 .

Optical Characterization of Ion-Implanted 4H-SiC

Jian H. Zhao, Z. Feng, F. Yan, 2002 .

A Novel Technology for the Formation of a Very Small Bevel Angle for Edge Termination

Jian H. Zhao, F. Yan, M. Weiner, 2002 .

Design and fabrication of 4H-SiC APD linear arrays

G. Olsen, J.H. Zhao, N. Bush, 2001, 2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497).