B. Patnaik

发表

Perturbed-angular-correlation studies of In-vacancy pairs in Hg1−xCdxTe

W. C. Hughes, R. Triboulet, J. C. Austin, 1999 .

Determination of Si2p electron attenuation lengths in SiO2

J. Fulghum, G. Mcguire, N. Parikh, 1992 .

Studies on chemical bath deposited cadmium sulphide films by buffer solution technique

N. Dhere, K. Sundaram, O. Melendez, 1995 .

Thermal stability of thin poly‐Si/Ta2O5/TiN capacitors for dynamic random access memory applications

P. Fazan, G. Sandhu, N. Parikh, 1994 .

Conductivity-type inversion following low-energy hydrogen implantation

B. Sopori, G. Rozgonyi, Z. Radzimski, 1991 .

Methodology and application of the nuclear resonance reaction 16O(α, α)16O for the profiling of titanium oxide

N. Magnussen, D. Cocke, E. Schweikert, 1988 .

Analysis of the composition of surface layers in high-temperature superconducting materials by the combination of Rutherford backscattering spectrometry and nuclear resonance reaction

F. Freire, D. Naugle, W. Kirk, 1989 .

Structure and thermodynamic behavior of In3+−2VAg defects in AgBr

K. Price, J. C. Austin, B. Patnaik, 1995 .

Effect of Microstructure on the Electromigration Life of Thin‐Film A1–Cu Conductors

B. Agarwala, B. N. Agarwala, B. Patnaik, 1972 .

Effect of Microstructure on the Electromigration Life of Thin Film Al–Cu Conductors

B. Agarwala, B. N. Agarwala, B. Patnaik, 1972 .

Analysis of tin films using alpha resonant scattering

I. Baumvol, F. Freire, W. Schreiner, 1989 .

Transition between Ge segregation and trapping during high‐pressure oxidation of GexSi1−x/Si

E. Frey, W. Chu, N. Parikh, 1993 .

CoSi2 Formation Through Co/Ti Multilayer Reacting with Si-(100) Substrate

G. Rozgonyi, B. Patnaik, F. Hong, 1991 .

Morphological instability and Si diffusion in nanoscale cobalt silicide films formed on heavily phosphorus doped polycrystalline silicon

G. Rozgonyi, B. Patnaik, S. Pramanick, 1993 .

Stability of Nanoscale Cobalt Silicide Film Formation on Polysilicon

J. Gambino, G. Rozgonyi, B. Patnaik, 1992 .

Self-Aligned Epitaxial Cosi 2 Formation From Multilayer Co/Ti-Si(100) by a Two-Step Rta Process

C. Osburn, G. Rozgonyi, B. Patnaik, 1993 .

Solid State Interaction and Nano-Scale Silicide Formation for Co/Ti Multilayers on Silicon

G. Rozgonyi, B. Patnaik, F. Hong, 1992 .

MECHANISMS OF EPITAXIAL COSI2 FORMATION IN THE MULTILAYER CO/TI-SI(100) SYSTEM

G. Rozgonyi, B. Patnaik, F. Hong, 1994 .

Capillary Instabilities in Cobalt Silicide Thin Films

G. Rozgonyi, B. Patnaik, S. Pramanick, 1994 .

Agglomeration-Free Nanoscale Cobalt Silicide Film Formation Via Substrate Preamorphization

G. Rozgonyi, B. Patnaik, S. Pramanick, 1993 .

Phase Transformation of Co Silicidation in the Co/Ti- and Ti/Co-Si(100) Systems

G. Rozgonyi, Ping Liu, B. Patnaik, 1993 .

Nanoscale CoSi2 contact layer growth from deposited Co/Ti multilayers on Si substrates

G. Rozgonyi, B. Patnaik, F. Hong, 1992 .

Realization of Y1Ba2Cu3O7−δ/Y-ZrO2 epitaxial configuration on silicon (100) by pulsed laser ablation without chemical removal of native surface oxide

S. Ogale, A. Madhukar, R. Vispute, 1992 .

Trilayered heterostructures in in-situ laser deposited high temperature superconductors

J. Narayan, Ashok Kumar, B. Patnaik, 1993 .

Deposition of epitaxial Cu2O films on (100) MgO by laser ablation and their processing using ion beams

S. Ogale, N. Parikh, P. G. Bilurkar, 1993 .

Solution-grown CdS layers for polycrystalline-thin-film solar cells

N. Dhere, K. Sundaram, O. Melendez, 1993, Conference Record of the Twenty Third IEEE Photovoltaic Specialists Conference - 1993 (Cat. No.93CH3283-9).

Analysis of anodic oxide films on niobium

N. Magnussen, D. Cocke, E. Schweikert, 1989 .

Retention and surface blistering of helium irradiated tungsten as a first wall material

John D. Hunn, Lance Lewis Snead, Nalin R. Parikh, 2005 .

Purity and morphology of aluminium films

N. Dhere, B. Patnaik, T. P. Arsenio, 1975 .

The morphology of thick evaporated aluminium films and their purity as determined by proton-induced x-ray analysis

N. Dhere, B. Patnaik, T. P. Arsenio, 1977 .

X-ray photoelectron spectroscopy and Rutherford backscattering spectrometry study of anion incorporation in anodically grown films

N. Magnussen, D. Cocke, E. Schweikert, 1988 .

Deposition of copper oxide thin films on different substrates by pulsed excimer laser ablation

Nalin R. Parikh, S. M. Kanetkar, B. K. Patnaik, 1992 .

Range and range straggling of 15 to 350 keV 69Ga in amorphous silicon

J. Biersack, D. Fink, M. Behar, 1984 .

Channeling effect of P implantation in Si(100)

S. Corcoran, K. Varahramyan, N. Parikh, 1991 .

Trace element analysis in thick targets by charged particle induced X-rays

N. Dhere, B. Patnaik, 1975 .

Spatially confined nickel disilicide formation at 400 °C on ion implantation preamorphized silicon

G. Rozgonyi, C. White, B. Patnaik, 1993 .

STUDY OF FAILURE MECHANISMS IN Al–Cu THIN FILMS BY HIGH‐VOLTAGE ELECTRON MICROSCOPY

B. Patnaik, L. Berenbaum, 1971 .

Composition Analysis of High Tc Bi-Sr-Ca-Cu-O Thin Films by RBS and EPMA

N. Dhere, J. Goral, N. Parikh, 1989 .

Kinematic compensation in penetration of ions in matter

G. B. Baptista, B. Patnaik, C. Leite, 1986 .

Reassessment of the assignment of the InM2+3+VM2+ defect in CdTe and ternary II‐VI compounds

W. C. Hughes, K. Price, J. C. Austin, 1995 .

Rutherford backscattering applied to oxide film analysis

O. J. Murphy, N. Magnussen, D. Cocke, 1986 .

Use of carbonitride film as buffer layer for CVD diamond nucleation

S. Kshirsagar, N. Parikh, Anjali A. Kulkarni, 1996 .

NiSi formation through a semipermeable membrane of amorphous Cr(Ni)

G. Rozgonyi, D. Knoesen, N. Parikh, 1991 .

Comparison of Ti and Pt silicon carbide Schottky rectifiers

M. Bhatnagar, P. Mclarty, B. Patnaik, 1992, 1992 International Technical Digest on Electron Devices Meeting.