V. Zubialevich

发表

Optical and structural characterisation of epitaxial nanoporous GaN grown by CVD

P. Parbrook, J. Jiménez, O. Martínez, 2017, Nanotechnology.

Multiple Quantum Well InGaN/GaN Blue Optically Pumped Lasers Operating in the Spectral Range of 450–470 nm

V. N. Pavlovskii, A. L. Gurskii, G. P. Yablonskii, 2001 .

Self-healing thermal annealing: surface morphological restructuring control of GaN nanorods

Timothy W. Collins, Michael Schmidt, M. Morris, 2016 .

Composition dependence of photoluminescence properties of InxAl1−xN/AlGaN quantum wells

P. J. Parbrook, P. Parbrook, V. Zubialevich, 2016 .

Thermal Stability of Crystallographic Planes of GaN Nanocolumns and Their Overgrowth by MOVPE

P. Parbrook, V. Zubialevich, P. Pampili, 2021 .

Thermal Stability of Crystallographic Planes of GaN Nanocolumns and Their Overgrowth by Metal Organic Vapor Phase Epitaxy

P. Parbrook, V. Zubialevich, P. Pampili, 2020 .

Ultra-High-Density Arrays of Defect-Free AlN Nanorods: A "Space-Filling" Approach.

P. Parbrook, N. Petkov, J. Holmes, 2016, ACS nano.

GaN Nanowire Schottky Barrier Diodes

Z. Shen, P. Parbrook, M. White, 2017, IEEE Transactions on Electron Devices.

The effect of a varied NH3 flux on growth of AlN interlayers for InAlN/GaN heterostructures

P. Parbrook, V. Zubialevich, T. C. Sadler, 2013 .

A systematic comparison of polar and semipolar Si-doped AlGaN alloys with high AlN content

D. V. Dinh, P. Parbrook, R. Martin, 2020, Journal of Physics D: Applied Physics.

AlGaN/GaN high electron mobility transistor heterostructures grown by ammonia and combined plasma-assisted ammonia molecular beam epitaxy

G. P. Yablonskii, S. I. Petrov, A. N. Alexeev, 2019, Japanese Journal of Applied Physics.

Luminescence and lasing in InGaN∕GaN multiple quantum well heterostructures grown at different temperatures

Michael Heuken, Holger Kalisch, A. Alam, 2004 .

Irregular spectral position of E || c component of polarized photoluminescence from m-plane InGaN/GaN multiple quantum wells grown on LiAlO2

V. N. Pavlovskii, G. P. Yablonskii, A. Vescan, 2011 .

Photoluminescence, stimulated emission and carrier dynamics in GaN/Si heterostructures studied by time-resolved four-wave mixing technique

V. N. Pavlovskii, A. L. Gurskii, G. P. Yablonskii, 2005 .

Bandgap and refractive index estimates of InAlN and related nitrides across their full composition ranges

B. Ghafary, P. Parbrook, V. Zubialevich, 2020, Scientific Reports.

Luminescence and stimulated emission from gan on silicon substrates heterostructures

Michael Heuken, Holger Kalisch, A. Alam, 2002 .

Influence of InGaN/GaN/Si electroluminescent heterostructure design and quantum well thickness on their luminescent and laser properties

V. N. Pavlovskii, G. P. Yablonskii, R. H. Jansen, 2010, 2010 International Conference on Advanced Optoelectronics and Lasers.

High temperature operation of optically pumped InGaN/GaN MQW heterostructures lasers grown on Si substrates

V. N. Pavlovskii, A. L. Gurskii, G. P. Yablonskii, 2003, 2003 International Symposium on Compound Semiconductors.

Carrier diffusion length measured by optical method in GaN epilayers grown by MOCVD on sapphire substrates

Michael Heuken, Holger Kalisch, A. Alam, 2005 .

Blue InGaN/GaN multiple-quantum-well optically pumped lasers with emission wavelength in the spectral range of 450–470 nm

Michael Heuken, Holger Kalisch, H. Protzmann, 2001 .

Integration of Cd(Zn)Se/ZnSe and GaN-based lasers for optoelectronic applications in a green spectral range

V. N. Pavlovskii, A. L. Gurskii, G. P. Yablonskii, 2004 .

Preparation of Substrates Intended for the Growth of Lower Threading Dislocation Densities within Nitride Based UV Multiple Quantum Wells

P. Parbrook, N. Petkov, J. Holmes, 2013 .

Ag colloids and arrays for plasmonic non-radiative energy transfer from quantum dots to a quantum well

A. L. Bradley, L. J. Higgins, G. P. Murphy, 2016, Nanotechnology.

Tailoring Wettability Properties of GaN Epitaxial Layers through Surface Porosity Induced during CVD Deposition

P. Parbrook, M. Aguiló, F. Díaz, 2021, Langmuir : the ACS journal of surfaces and colloids.

Reduction of threading dislocation density in top-down fabricated GaN nanocolumns via their lateral overgrowth by MOCVD

John Paul Shen, P. Parbrook, V. Zubialevich, 2020 .

Ultraviolet Stimulated Emission in AlGaN Layers Grown on Sapphire Substrates Using Ammonia and Plasma‐Assisted Molecular Beam Epitaxy

G. P. Yablonskii, S. I. Petrov, A. N. Alexeev, 2020, Physica Status Solidi (a).

Carrier dynamics near a crack in GaN microwires with AlGaN multiple quantum wells

J. Eymery, P. Parbrook, C. Bougerol, 2020 .

Cathodoluminscence of barium and calcium thioand selenogallates co-doped with rare-earth elements

V. N. Pavlovskii, G. P. Yablonskii, B. G. Tagiev, 2013 .

Significant contribution from impurity-band transport to the room temperature conductivity of silicon-doped AlGaN

Duc V. Dinh, Vitaly Z. Zubialevich, Peter J. Parbrook, 2018 .

Determination of Ga auto-incorporation in nominal InAlN epilayers grown by MOCVD

P. Parbrook, J. Holmes, John O’Connell, 2014 .

Internal laser parameters and optical properties of laser with CdSe quantum dots in ZnSe matrix

V. N. Pavlovskii, A. L. Gurskii, G. P. Yablonskii, 2006 .

Optical properties of Cd(Zn)Se/ZnMgSSe heterostructures with fractional QD-like CdSe insertions at high excitation levels

V. N. Pavlovskii, A. L. Gurskii, G. P. Yablonskii, 2006 .

Effect of Surface and Defect Chemistry on the Photocatalytic Properties of Intentionally Defect-Rich ZnO Nanorod Arrays.

Michael Schmidt, Jan Kegel, I. Povey, 2018, ACS applied materials & interfaces.

Strain control in graphene on GaN nanowires: Towards pseudomagnetic field engineering

A. Wysmołek, A. Krajewska, A. Przewłoka, 2022, Carbon.

Pseudomagnetic fields and strain engineering: graphene on GaN nanowires

A. Wysmołek, A. Krajewska, A. Przewłoka, 2021, 2108.00167.

Fully porous GaN p-n junction diodes fabricated by chemical vapor deposition.

P. Parbrook, J. Jiménez, C. O’Dwyer, 2014, ACS applied materials & interfaces.

Comparative study of polar and semipolar (112¯2) InGaN layers grown by metalorganic vapour phase epitaxy

Duc V. Dinh, Vitaly Z. Zubialevich, Colin J. Humphreys, 2014 .

Fabrication of p-type porous GaN on silicon and epitaxial GaN

P. Parbrook, C. O’Dwyer, H. Geaney, 2013 .

Single phase (112¯2) AlN grown on (101¯0) sapphire by metalorganic vapour phase epitaxy

D. V. Dinh, P. Parbrook, N. Petkov, 2015 .

Solution processed ZnO homogeneous quasisuperlattice materials

P. Parbrook, C. O’Dwyer, D. McNulty, 2017 .

Influence of MQW growth temperature and post-epitaxial annealing on luminescence and laser properties of InGaN/GaN MQW heterostructures grown by MOCVD on sapphire substrates

V. N. Pavlovskii, A. L. Gurskii, G. P. Yablonskii, 2005 .

InxAl1-xN/Al0.53Ga0.47N multiple quantum wells on Al0.5Ga0.5N buffer with variable in-plane lattice parameter

G. P. Yablonskii, M. V. Rzheutski, P. Parbrook, 2018 .

InGaN/AlInN interface with enhanced holes to improve photoelectrochemical etching and GaN device release

B. Corbett, P. Parbrook, F. Atar, 2023, Semiconductor Science and Technology.

High-efficiency low-threshold optically-pumped green laser with single CdSe quantum-disk-sheet active region

A. L. Gurskii, G. P. Yablonskii, P. Kop’ev, 2006 .

InAlN-based LEDs emitting in the near-UV region

B. Corbett, P. Parbrook, V. Zubialevich, 2019, Japanese Journal of Applied Physics.

Optical properties and carrier dynamics in differently strained GaN epilayers grown on Si by MOVPE

V. N. Pavlovskii, A. L. Gurskii, G. P. Yablonskii, 2006 .

Electrostatically-induced strain of graphene on GaN nanorods

A. Wysmołek, A. Krajewska, A. Przewłoka, 2023, Applied Surface Science.

Dense GaN nanocolumn arrays by hybrid top-down-regrow approach using nanosphere lithography

P. Parbrook, V. Zubialevich, M. McLaren, 2018, 2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO).

Strongly nonparabolic variation of the band gap in InxAl1−xN with low indium content

D. V. Dinh, E. O’Reilly, P. Parbrook, 2016 .

Enhanced UV luminescence from InAlN quantum well structures using two temperature growth

D. V. Dinh, P. Parbrook, V. Zubialevich, 2014 .

Epitaxial lateral overgrowth of AlN on self-assembled patterned nanorods

Justin D. Holmes, Nikolay Petkov, Vitaly Z. Zubialevich, 2015 .

Growth, Stimulated Emission, Photo- and Electroluminescence of InGaN/GaN EL-Test Heterostructures

Michael Heuken, H. Protzmann, Bernd Schineller, 2003 .

Surface Morphology Evolution of AlGaN Microhoneycomb Structures during Epitaxial Overgrowth

P. Parbrook, V. Zubialevich, Sandeep M. Singh, 2024, physica status solidi (b).

Continuous‐Wave Operation of 457 nm InGaN Laser Diodes with Etched Facet Mirrors for On‐Chip Photonics

P. Parbrook, V. Zubialevich, Zhi Li, 2023, Advanced Photonics Research.