T. Swietlik

发表

Low dislocation density, high power InGaN laser diodes

M. Boćkowski, J. Weyher, P. Perlin, 2004 .

Optical gain and saturation behavior in homoepitaxially grown InGaN/GaN/AlGaN laser structures

P. Perlin, R. Czernecki, M. Leszczynski, 2007 .

Comparison of gain in group-III-nitride laser structures grown by metalorganic vapour phase epitaxy and plasma-assisted molecular beam epitaxy on bulk GaN substrates

S. Juršėnas, P. Perlin, R. Czernecki, 2007 .

Optically pumped lasing of GaN/AlGaN structures grown along a non‐polar crystallographic direction

P. Perlin, M. Kryśko, C. Skierbiszewski, 2008 .

Application of microscope thermography in testing temperature distribution in a semiconductor laser

M. Bednarek, P. Wisniewski, T. Swietlik, 2010 .

Application of thermal camera to optimize assembly methods of laser diodes

M. Bednarek, P. Wisniewski, T. Swietlik, 2010 .

Fabrication and properties of GaN-based lasers

Grzegorz Nowak, Lucja Marona, Piotr Perlin, 2008 .

Mode dynamics of high power (InAl)GaN based laser diodes grown on bulk GaN substrate

Ulrich T. Schwarz, Piotr Perlin, Robert Czernecki, 2007 .

Comparison of optical properties of InGaN/GaN/AlGaN laser structures grown by MOVPE and MBE

Izabella Grzegory, P. Wisniewski, T. Suski, 2007, SPIE OPTO.

Anomalous temperature characteristics of single wide quantum well InGaN laser diode

Petr G. Eliseev, P. Perlin, Lucja Marona, 2006 .