I. Grzegory

发表

GaMg)N new semiconductor grown at high pressure of nitrogen

M. Boćkowski, P. Perlin, T. Suski, 1999 .

Thermal conductivity of GaN crystals grown by high pressure method

T. Paszkiewicz, M. Boćkowski, T. Suski, 2003 .

Role of band potential roughness on the luminescence properties of InGaN quantum wells grown by MBE on bulk GaN substrates

M. Godlewski, S. Juršėnas, A. Žukauskas, 2006 .

Unambiguous relationship between photoluminescence energy and its pressure evolution in InGaN/GaN quantum wells

M. Funato, Y. Kawakami, P. Perlin, 2012 .

The influence of lattice parameter variation on microstructure of GaN single crystals

M. Leszczynski, J. Domagala, M. Kryśko, 2005 .

Dynamics of trapping on donors and relaxation of the B‐exciton in GaN

K. Korona, A. Wysmołek, J. Baranowski, 2003 .

Polarity identification of GaN bulk single crystals (0001) surface by Auger electron spectroscopy

M. Boćkowski, E. Litwin-Staszewska, I. Grzegory, 1997 .

Exciton Dynamics in Homoepitaxial GaN

K. Tsuno, I. Ivanov, B. Monemar, 1997 .

Observation of localization effects in InGaN/GaN quantum structures by means of the application of hydrostatic pressure

M. Boćkowski, A. Žukauskas, N. Grandjean, 2004 .

Phase Transformations and p-T Diagram of Some HgX Compounds (X=S, Se, Te)

M. Boćkowski, G. Brun, J. Tedenac, 1993 .

Comparison of gain in group-III-nitride laser structures grown by metalorganic vapour phase epitaxy and plasma-assisted molecular beam epitaxy on bulk GaN substrates

S. Juršėnas, P. Perlin, R. Czernecki, 2007 .

High power blue–violet InGaN laser diodes grown on bulk GaN substrates by plasma-assisted molecular beam epitaxy

Z. Wasilewski, P. Perlin, P. Prystawko, 2005 .