A. Pelzmann

发表

Reactive MBE of group III nitrides : high-quality homoepitaxial GaN and ultra-violet light-emitting diodes

K. Ebeling, M. Kamp, M. Mayer, 1999 .

Dry etching of GaN substrates for high-quality homoepitaxy

K. Ebeling, F. Eberhard, M. Leszczynski, 1999 .

Photoluminescence study on GaN homoepitaxial layers grown by molecular beam epitaxy

K. Ebeling, M. Boćkowski, G. Karczewski, 1996 .

High Quality Homoepitaxial GaN Grown by Molecular Beam Epitaxy with NH 3 on Surface Cracking

K. Ebeling, G. Karczewski, M. Leszczynski, 1997 .

Fundamentals, material properties and device performances in GaN MBE using on-surface cracking of ammonia

K. Ebeling, M. Kamp, M. Mayer, 1997 .

Luminescence Related to Stacking Faults in Heterepitaxially Grown Wurtzite GaN

K. Ebeling, R. Davis, C. Zanotti-Fregonara, 1997 .

Efficient optical activation of ion-implanted Zn acceptors in GaN by annealing under 10 kbar N 2 overpressure

K. Ebeling, S. Strite, A. Rockett, 1997 .

Improved optical activation of ion-implanted Zn acceptors in GaN by annealing under N-2 overpressure

K. Ebeling, S. Strite, A. Dommann, 1997 .

Optical activation and diffusivity of ion-implanted Zn acceptors in GaN under high-pressure, high-temperature annealing

K. Ebeling, S. Strite, A. Rockett, 1998 .

Donor-Acceptor Pair Transitions in GaN

K. Thonke, R. Sauer, K. Kornitzer, 1997 .

Microstructure and growth morphology as related to electro-optical properties of heteroepitaxial wurtzite GaN on sapphire (0001) substrates

K. Ebeling, C. Zanotti-Fregonara, G. Salviati, 1997 .

Crystal defects and optical properties of GaN grown with different techniques: stacking fault related luminescence

K. Ebeling, R. Davis, C. Zanotti-Fregonara, 1997 .

On Surface Cracking of Ammonia for MBE Growth of GaN

K. Ebeling, M. Kamp, M. Mayer, 1996 .

Low resistive p-type GaN using two-step rapid thermal annealing processes

Markus Kamp, M. Seyboth, M. Scherer, 2001 .

Epitaxy of ternary nitrides on GaN single crystals

M. Boćkowski, M. Leszczynski, P. Prystawko, 1999 .

Microstructure, growth mechanisms and electro-optical properties of heteroepitaxial GaN layers on sapphire (0001) substrates

K. Ebeling, C. Zanotti-Fregonara, G. Salviati, 1996 .

GaN homoepitaxy for device applications

K. Ebeling, T. Suski, I. Grzegory, 1998 .

Evaluation of the Life Expectancy of Micro Surgically Used Diamond Blades Utilizing a New Measurement Device

G. Lang, E. Weingärtner, C. Spraul, 2003 .