S. Degendt

Thermal recovery from stress-induced high-κ dielectric film degradation

R. Degraeve, B. O’Sullivan, G. Groeseneken, 2007 .

Accurate Gate Impedance Determination on Ultraleaky MOSFETs by Fitting to a Three-Lumped-Parameter Model atFrequencies From DC to RF

B. O’Sullivan, G. Groeseneken, M. Toledano-Luque, 2007, IEEE Transactions on Electron Devices.

Implementation of the IMEC-Clean in advanced CMOS manufacturing

M. Heyns, R. Vos, M. Meuris, 1999, 1999 IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings (Cat No.99CH36314).

Consideration of the chemical reactivity of trace impurities present in a glow discharge

W. Harrison, S. Tong, S. Degendt, 1993 .

Surface preparation and interfacial stability of high-k dielectrics deposited by atomic layer chemical vapor deposition

Wilfried Vandervorst, Marc Heyns, Matty Caymax, 2003 .

VO2, a Metal-Insulator Transition Material for Nanoelectronic Applications

C. Detavernier, J. Kittl, I. Radu, 2012 .

Effectiveness of Nitridation of Hafnium Silicate Dielectrics: A Comparison Between Thermal and Plasma Nitridation

L. Ragnarsson, B. O’Sullivan, L. Pantisano, 2007, IEEE Transactions on Electron Devices.

Device performance of transistors with high-/spl kappa/ dielectrics using cross-wafer-scaled interface-layer thickness

L. Ragnarsson, B. O’Sullivan, E. Rohr, 2006, IEEE Electron Device Letters.

Cross-wafer controlled interface layer thickness variation, and its application to SiO2 / high-κ stack characterisation

L. Ragnarsson, B. O’Sullivan, E. Rohr, 2006, 2006 European Solid-State Device Research Conference.

PVD-HIGH-K GATE DIELECTRICS WITH FUSI GATE AND INFLUENCE OF PDA TREATMENT ON ON-STATE DRIVE CURRENT

Serge Biesemans, Shigenori Hayashi, S. Kubicek, 2006 .

Application of combinatorial methodologies for work function engineering of metal gate/high-κ advanced gate stacks

Martin L. Green, T. Schram, J. Hattrick-Simpers, 2007 .