R. Gao

As-grown-Generation Model for Positive Bias Temperature Instability

Z. Ji, J. Zhang, W. Zhang, 2018, IEEE Transactions on Electron Devices.

Degradation Characteristics and Reliability Assessment of 1310 nm VCSEL for Microwave Photonic Link

Yuebo Liu, Shuwang Li, S. Yang, 2022, Applied Sciences.

An Investigation on Border Traps in III–V MOSFETs With an In0.53Ga0.47As Channel

N. Collaert, D. Linten, B. Kaczer, 2015, IEEE Transactions on Electron Devices.

Reliable Time Exponents for Long Term Prediction of Negative Bias Temperature Instability by Extrapolation

Dimitri Linten, Guido Groeseneken, Jacopo Franco, 2017, IEEE Transactions on Electron Devices.

A Comparative Study of AC Positive Bias Temperature Instability of Germanium nMOSFETs With GeO₂/Ge and Si-cap/Ge Gate Stack

Z. Ji, Y. En, Hong Yang, 2021, IEEE Journal of the Electron Devices Society.

A Comparative Study of AC Positive Bias Temperature Instability of Germanium nMOSFETs with GeO2/Ge and Si-cap/Ge Gate Stack A Comparative Study of AC Positive Bias Temperature Instability of Germanium nMOSFETs with GeO2/Ge and Si-cap/Ge Gate

Z. Ji, Y. En, Hong Yang, 2021 .

Understanding charge traps for optimizing Si-passivated Ge nMOSFETs

B. Kaczer, L. Witters, N. Collaert, 2016, 2016 IEEE Symposium on VLSI Technology.

A test-proven As-grown-Generation (A-G) model for predicting NBTI under use-bias

S. De Gendt, G. Groeseneken, B. Kaczer, 2015, 2015 Symposium on VLSI Technology (VLSI Technology).

Revealing the Mechanism of the Bias Temperature Instability Effect of p-GaN Gate HEMTs by Time-Dependent Gate Breakdown Stress and Fast Sweeping Characterization

Jincheng Zhang, Zhihong Liu, S. You, 2023, Micromachines.