I. Sanders

The application of the loop annealing technique to self diffusion studies in silicon

P. Dobson, I. Sanders, 1974 .

Oxidation, defects and vacancy diffusion in silicon

P. Dobson, I. Sanders, 1969 .

Activation of low dose silicon implants in GaAs by multiply scanned electron beams

J. F. Singleton, H. Ahmed, I. Sanders, 1980 .

The effect of argon implantation on the conductivity of boron implanted silicon

B. J. Smith, I. Sanders, B. D. Williams, 1977 .

Selenium Ion Implanted GaAs MESFETs

I. Sanders, A. Peake, R. Surridge, 1980 .

Planar Channeling of Si Implants in GaAs

J. F. Singleton, R. Blunt, I. Sanders, 1983 .