Kehui Liu

Dark current mechanism of unpassivated mid wavelength type II InAs/GaSb superlattice infrared photodetector

K. Cui, P. Jin, Yulian Cao, 2014 .

Pushing Detection Wavelength Toward $1~\mu \text{m}$ by Type II InAs/GaAsSb Superlattices With AlSb Insertion Layers

Tao Yang, H. Ji, Yulian Cao, 2016, IEEE Electron Device Letters.

Impact of band structure of Ohmic contact layers on the response feature of p-i-n very long wavelength type II InAs/GaSb superlattice photodetector

Shulong Lu, Yulian Cao, Jianliang Huang, 2015 .

Longer than 1.9 μm photoluminescence emission from InAs quantum structure on GaAs (001) substrate

Tao Yang, S. Luo, Yulian Cao, 2015 .

InAlAs Graded Metamorphic Buffer with Digital Alloy Intermediate Layers

Yi Gu, Yonggang Zhang, Xiangyun Fang, 2012 .

Evaluation of the performance correlated defects of metamorphic InGaAs photodetector structures through plane-view EBIC

Yonggang Zhang, S. Xi, Hsby Li, 2014 .

Experimental determination of band overlap in type II InAs/GaSb superlattice based on temperature dependent photoluminescence signal

Tao Yang, H. Ji, S. Luo, 2015 .