Haodong Zhang

发表

Improvement of crystal quality HVPE grown GaN on an H3PO4 etched template

Yongliang Shao, Yongzhong Wu, Xiaopeng Hao, 2011 .

Formation mechanism of 2D SnS2 and SnS by chemical vapor deposition using SnCl4 and H2S

I. Radu, M. Caymax, M. Heyns, 2018 .

Nucleation and growth mechanism of 2D SnS2 by chemical vapor deposition: initial 3D growth followed by 2D lateral growth

H. Bender, I. Radu, M. Caymax, 2018 .

MoS2 Functionalization with a Sub-nm Thin SiO2 Layer for Atomic Layer Deposition of High-κ Dielectrics

H. Bender, I. Radu, M. Heyns, 2017 .

Epitaxial superconducting δ-MoN and δ-NbN thin films by a chemical solution deposition

Y. Sun, C. Cai, X. Tang, 2020, Journal of Alloys and Compounds.

A chemisorbed interfacial layer for seeding atomic layer deposition on graphite.

M. Caymax, A. Delabie, S. De Gendt, 2021, Nanoscale.

Influence of stress in GaN crystals grown by HVPE on MOCVD-GaN/6H-SiC substrate

Lei Zhang, Yuan Tian, Yongzhong Wu, 2014, Scientific Reports.

EBSD crystallographic orientation research on strain distribution in hydride vapor phase epitaxy GaN grown on patterned substrate

Yongliang Shao, Yongzhong Wu, Xiaopeng Hao, 2013 .

Characterization of dislocations in MOCVD-grown GaN using a high temperature annealing method

Yongliang Shao, Yongzhong Wu, Xiaopeng Hao, 2014 .

Growth of high quality GaN on a novel designed bonding-thinned template by HVPE

Yongliang Shao, Yongzhong Wu, Xiaopeng Hao, 2012 .