Xinxin Zhang

An electronic synaptic device based on HfO2TiOx bilayer structure memristor with self-compliance and deep-RESET characteristics.

Huafeng Yang, S. Oda, Kunji Chen, 2018, Nanotechnology.

Effect of Joule Heating on Resistive Switching Characteristic in AlOx Cells Made by Thermal Oxidation Formation

Wei Li, Jian Liu, Ling Xu, 2020, Nanoscale research letters.

Presetting conductive pathway induced the switching uniformity evolution of a-SiNx:H resistive switching memory.

Huafeng Yang, Kunji Chen, Wei Li, 2018, Nanotechnology.

The Ultra‐Low Power Performance of a‐SiNxOy:H Resistive Switching Memory

Wei Li, Kunji Chen, Jian Liu, 2018, physica status solidi (a).

Superior endurance performance of nonvolatile memory devices based on discrete storage in surface-nitrided Si nanocrystals

Kunji Chen, Xinfan Huang, Xiaofan Jiang, 2016 .

Characteristics of multilevel storage and switching dynamics in resistive switching cell of Al2O3/HfO2/Al2O3 sandwich structure

Kunji Chen, Zhongyuan Ma, Xinfan Huang, 2018 .