Y. Zhang

Optical properties of InAs∕GaAs surface quantum dots

S. Chua, S. Tripathy, P. Chen, 2005 .

Growth, structure, and optical properties of GaSb quantum dot by LPE technique

N. Dai, Y. Zhang, A. Krier, 2013, 2013 IEEE 5th International Nanoelectronics Conference (INEC).

LPE growth and characterization of InAs1−xNx films

Xiaodong Yang, Song Hu, Wenxiu Dong, 2014 .

The valence band structure of the ZnSe{001}-(2 × 1) surface as determined by angle-resolved photoemission spectroscopy

L. Ley, J. Riley, D. Evans, 1997 .

Characterization of strained Si/Si1−xGex/Si heterostructures annealed in oxygen or argon

Shi-Li Zhang, M. Östling, De-zhang Zhu, 2002 .

Transition of 3D to 2D growth modes of InAs grown on GaAs

S. Chua, S. Tripathy, Z. Miao, 2006 .