B. Asllani

Experimental and simulation results of optical beam induced current technique applied to wide bandgap semiconductors

D. Planson, P. Bevilacqua, C. Raynaud, 2019, Materials Science in Semiconductor Processing.

Subthreshold Drain Current Hysteresis of Planar SiC MOSFETs

A. Castellazzi, H. Morel, D. Planson, 2019, Materials Science Forum.

Extraction of the 4H-SiC/SiO2 Barrier Height Over Temperature

H. Morel, C. Buttay, O. Aviñó-Salvadó, 2020, IEEE Transactions on Electron Devices.

Modeling of Inhomogeneous 4 H-SiC Schottky and JBS Diodes in a Wide Temperature Range

P. Godignon, D. Tournier, M. Berthou, 2019 .

Modeling of Inhomogeneous 4H-SiC Schottky and JBS Diodes in a Wide Temperature Range

P. Godignon, D. Tournier, M. Berthou, 2016 .

Interest of Using a Micro-Meter Spatial Resolution to Study SiC Semi-Conductor Devices by Optical Beam Induced Current (OBIC)

D. Planson, P. Bevilacqua, C. Sonneville, 2019 .

Avalanche ruggedness of parallel SiC power MOSFETs

Andrea Irace, Alberto Castellazzi, Michele Riccio, 2018, Microelectron. Reliab..

VTH-Hysteresis and Interface States Characterisation in SiC Power MOSFETs with Planar and Trench Gate

Dominique Planson, Alberto Castellazzi, Oriol Avino-Salvado, 2019, 2019 IEEE International Reliability Physics Symposium (IRPS).

Electrically active traps in 4H-silicon carbide (4H-SiC) PiN power diodes

H. Morel, D. Planson, C. Raynaud, 2023, Journal of Materials Science: Materials in Electronics.

10 kV Silicon Carbide PiN Diodes—From Design to Packaged Component Characterization

H. Morel, D. Planson, L. Phung, 2019, Energies.

Effects of the laser beam size on the Optical Beam Induced Current (OBIC) for the study of Wide Band Gap (WBG) Semi-Conductor Devices

D. Planson, P. Bevilacqua, C. Sonneville, 2019 .

SiC power MOSFETs Threshold-voltage hysteresis and its impact on Short Circuit operation

Dominique Planson, Hervé Morel, Alberto Castellazzi, 2018, 2018 IEEE International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles & International Transportation Electrification Conference (ESARS-ITEC).

Demonstration of the Short-circuit Ruggedness of a 10 kV Silicon Carbide Bipolar Junction Transistor

H. Morel, D. Planson, P. Bevilacqua, 2020, 2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe).

Static and Switching Characteristics of 10 kV-Class Silicon Carbide Bipolar Junction Transistors and Darlingtons

H. Morel, M. Mermet-Guyennet, D. Planson, 2020 .

VTH subthreshold hysteresis technology and temperature dependence in commercial 4H-SiC MOSFETs

Dominique Planson, Hervé Morel, Alberto Castellazzi, 2018, Microelectron. Reliab..