M. Boermans

Investigation of the temperature dependence of the threshold current density of GaInP/AlGaInP double‐heterostructure lasers

A. Valster, S. H. Hagen, M. Boermans, 1990 .

Strained Layer Quantum Well Semiconductor Lasers

L. Tiemeijer, J. Binsma, A. Valster, 1993 .

Improved performance of compressively as well as tensile strained quantum‐well lasers

L. Tiemeijer, T. V. Dongen, J. Binsma, 1992 .

Investigation of TE and TM polarised laser emission in GaInP/AlGaInP lasers by growth-controlled strain

A. Valster, S. H. Hagen, M. Boermans, 1990 .

Effect of strain on the threshold current of GaInP/AlGaInP quantum well lasers emitting at 633 nm

C. van der Poel, A. Valster, M. Boermans, 1992, 13th IEEE International Semiconductor Laser Conference.

High quality AlxGa1-x-yInyP alloys grown by MOVPE on (311)B GaAs substrates

C. Bulle-lieuwma, A. Valster, C. Liedenbaum, 1991 .

Low threshold current density (760 A/cm/sup 2/) and high power (45 mW) operation of strained Ga/sub 0.42/In/sub 0.58/P multiquantum well laser diodes emitting at 632 nm

Adriaan Valster, A. Valster, C. J. Poel, 1992 .

High-power low threshold operation of GaInP/AlGaInP strained MQW index guided visible laser diodes.

A. Valster, C. J. Poel, M. Boermans, 1992 .

Experimental determination of the relation between modal gain and current density for AlGaAs single quantum well lasers grown by metalorganic vapor phase epitaxy

R. Eppenga, S. H. Hagen, M. Boermans, 1988 .

633 nm CW operation of GaInP/AlGaInP laser-diodes

A. Valster, C. Liedenbaum, M. Boermans, 1990, Workshop on Learning from Authoritative Security Experiment Results.