U. Das

发表

Type-II InAs/GaSb photodiode array pixel isolation by femto-second laser anneal

S. Krishna, N. Gautam, Sonatan Das, 2016 .

CWDM integrated waveguide gratings by InGaAsP/InP quantum well intermixing

R. Sonkar, U. Das, 2012, 2012 7th International Conference on Electrical and Computer Engineering.

Strong luminescence intensities in Al0.22Ga0.78As grown on misoriented (111)B GaAs

A. Chin, U. Das, T. Cheng, 1993 .

Nonlinear effects in coplanar GaAs/InGaAs strained‐layer superlattice directional couplers

P. Bhattacharya, Y. Chen, U. Das, 1987 .

Optical losses in InGaAsP/InP QW intermixed waveguides for ZrO2 cap with and without F implantation

Raman Kumar, Sonatan Das, U. Das, 2015 .

InGaAsP/InP QW impurity free intermixing for variable ZrO2 cap thickness

T. D. Das, Sonatan Das, U. Das, 2015, 2015 IEEE Photonics Conference (IPC).

F-ion implanted quantum well intermixed waveguide grating

R. Sonkar, U. Das, 2012, 2012 Photonics Global Conference (PGC).

Quantum well intermixed waveguide grating

R. Sonkar, U. Das, 2011 .

WAVEGUIDE GRATING USING QUANTUM WELL INTERMIXING

R. Sonkar, U. Das, 2010 .

Simulations Studies for Femtosecond Laser Inscribed Bragg Grating Structures on Polymer

Sanyogita, P. Panigrahi, U. Das, 2017 .

Development of micro dye laser based on micro wire molding technique

Sanyogita, P. Panigrahi, U. Das, 2019, 2019 Workshop on Recent Advances in Photonics (WRAP).

Parameter variation in QCSE tuned embedded ring resonator

Viswas Sadasivan, U. Das, 2014, 2014 IEEE REGION 10 SYMPOSIUM.

InAs/GaSb Type-II superlattice photodiode array inter-pixel region blue-shift by femtosecond (fs) laser anneal

Sonatan Das, U. Das, 2017 .

Transport properties of n-type metalorganic chemical-vapor-deposited Al/sub x/Ga/sub 1-x/As (0< or =x< or =0. 6)

P. Bhattacharya, M. Ludowise, U. Das, 1984 .

Inductively coupled CH 4 /H 2 plasma etching process for mesa delineation of InAs/GaSb type‐II superlattice pixels

Sonatan Das, U. Das, Sona Das, 2019, Micro & Nano Letters.

Performance characteristics of InGaAs/GaAs and GaAs/InGaAlAs coherently strained superlattice photodiodes

P. Bhattacharya, A. Chin, U. Das, 1987 .

Use of triethylindium and bisphosphinoethane for the growth on InP by chemical beam epitaxy

J. Ballingall, A. Chin, J. Mazurowski, 1992 .

Luminescence and deep‐level characteristics of GaAs/Si with atomic layer epitaxy grown predeposition layers

U. Das, S. Dhar, M. Mazumdar, 1996 .

Mid-Infrared InAs/GaSb Type-II Superlattice Photodetector Arrays

U. Das, 2018 .

Investigation of the interface region produced by molecular beam epitaxial regrowth

Paul R. Berger, P. Bhattacharya, D. Biswas, 1989 .

Variation of refractive index in strained InxGa1−xAs‐GaAs heterostructures

P. Bhattacharya, U. Das, 1985 .

Nonlinear tuning in InGaAsP Embedded Rings

Viswas Sadasivan, U. Das, 2018 .

Nonlinear tuning in InGaAsP Embedded Rings

Viswas Sadasivan, U. Das, 2018, Optical and Quantum Electronics.

Monolithically Integrable SQW High Speed Waveguide Photodiode With InGaAs/InP Graded Bandgap QW and SL Cladding

U. Das, Dharmander Malik, 2022, Journal of Lightwave Technology.

Chemical beam epitaxial growth of InP, InGaP, and InAs heterojunctions using triethylindium and bisphosphinoethane

J. Ballingall, A. Chin, J. Mazurowski, 1993 .

InGaAsP/InP QW Impurity Free Intermixing for Variable ZrO2 Cap Thickness

T. D. Das, U. Das, Tathagata Bhowmick, 2015, IEEE Photonics Technology Letters.

Growth and properties of In0.52Al0.48As/In0.53Ga0.47As, GaAS: In and InGaAs/GaAs multilayers

Paul R. Berger, P. Bhattacharya, Jasprit Singh, 1987 .

F induced layer disordering of GaAs/InGaP quantum wells

T. Anderson, B. Pathangey, U. Das, 1997 .

40GHz integrated multi quantum well intermixed waveguide photodiodes

Utpal Das, Tathagata Bhowmick, U. Das, 2012, Other Conferences.

Design of a Grating-Assisted Lateral Directional Coupler by Impurity-Induced Quantum-Well Intermixing of InGaAs/GaAs

A. Barve, U. Das, 2007, Journal of Lightwave Technology.

Material properties and optical guiding in InGaAs-GaAs strained layer superlattices--a brief review

P. Bhattacharya, Y. Nashimoto, U. Das, 1986 .

Tailoring of electron and hole energies in strained GaAsP/AlGaAs quantum wells using fluorine‐impurity‐induced layer disordering

R. Ramaswamy, F. Stevie, U. Das, 1992 .

Electro optic effect measurements for waveguide inscribed in X-cut LiNbO3 substrate using femtosecond laser direct writing process

Sanyogita, U. Das, Amar Ghar, 2023, 2303.11569.

Intensity modulator based on femtosecond laser assisted waveguide fabrication inside X-cut LiNbO3 crystal

Sanyogita, P. Panigrahi, U. Das, 2019, 2019 Workshop on Recent Advances in Photonics (WRAP).

Low‐loss optical waveguides made with molecular beam epitaxial In0.012Ga0.988As and In0.2Ga0.8As‐GaAs superlattices

P. Bhattacharya, U. Das, S. Dhar, 1986 .

InGaAs/GaAs multiquantum-well electroabsorption modulator with integrated waveguide.

P. R. Berger, P. Bhattacharya, U. Das, 1987, Optics letters.

Deep levels in as‐grown and Si‐implanted In0.2Ga0.8As–GaAs strained‐layer superlattice optical guiding structures

P. Bhattacharya, U. Das, S. Dhar, 1986 .

Orientation‐dependent phase modulation in InGaAs/GaAs multiquantum well waveguides

Pallab Bhattacharya, Paul R. Berger, Utpal Das, 1988 .

High‐quality materials and heterostructures on (111)B GaAs

J. Ballingall, A. Chin, U. Das, 1992 .

Integrated MQW intermixed InGaAsP/InP waveguide photodiodes

U. Das, Tathagata Bhowmick, 2008, 2008 Asia Optical Fiber Communication & Optoelectronic Exposition & Conference.

Electron and hole impact ionization coefficients in GaAs‐AlxGa1−xAs superlattices

P. Bhattacharya, Y. Nashimoto, U. Das, 1985 .