M. Sistani

发表

Epitaxial Ge0.81Sn0.19 Nanowires for Nanoscale Mid-Infrared Emitters.

S. Barth, J. Bernardi, J. Haverkort, 2019, ACS nano.

Ge quantum wire memristor.

S. Barth, A. Lugstein, P. Staudinger, 2020, Nanotechnology.

Reconfigurable Field Effect Transistors: A Technology Enablers Perspective

T. Mikolajick, W. Weber, A. Heinzig, 2022, Solid-State Electronics.

Plasmon-Driven Hot Electron Transfer at Atomically Sharp Metal–Semiconductor Nanojunctions

R. Oulton, Z. S. Momtaz, A. Lugstein, 2020, ACS photonics.

Polarity Control in Ge Nanowires by Electronic Surface Doping

A. Lugstein, P. Staudinger, M. Sistani, 2020, The journal of physical chemistry. C, Nanomaterials and interfaces.

Monolithic Metal–Semiconductor–Metal Heterostructures Enabling Next-Generation Germanium Nanodevices

J. Michler, D. Pohl, W. Weber, 2021, ACS applied materials & interfaces.

Stimulated Raman Scattering in Ge Nanowires

R. Oulton, E. Robin, A. Lugstein, 2020, The journal of physical chemistry. C, Nanomaterials and interfaces.

Reconfigurable Complementary and Combinational Logic Based on Monolithic and Single‐Crystalline Al‐Si Heterostructures

W. Weber, Corban G. E. Murphey, J. Cahoon, 2022, Advanced Electronic Materials.

A Top‐Down Platform Enabling Ge Based Reconfigurable Transistors

D. Pohl, W. Weber, B. Rellinghaus, 2021, Advanced Materials Technologies.

Bias-Switchable Photoconductance in a Nanoscale Ge Photodetector Operated in the Negative Differential Resistance Regime

W. Weber, A. Lugstein, M. Sistani, 2021, ACS Photonics.

Monolithic and Single-Crystalline Aluminum–Silicon Heterostructures

J. Michler, P. Schweizer, W. Weber, 2022, ACS applied materials & interfaces.

Octave-spanning low-loss mid-IR waveguides based on semiconductor-loaded plasmonics

B. Hinkov, G. Strasser, H. Detz, 2021, Optics Express.

Composition Dependent Electrical Transport in Si1-x Gex Nanosheets with Monolithic Single-Elementary Al Contacts.

J. Hartmann, F. Fournel, J. Michler, 2022, Small.

Mixed-Substituted Single-Source Precursors for Si1–xGex Thin Film Deposition

S. Barth, M. Wagner, M. Bolte, 2022, Inorganic chemistry.

Nanometer-Scale Ge-Based Adaptable Transistors Providing Programmable Negative Differential Resistance Enabling Multivalued Logic.

W. Weber, A. Lugstein, M. D. den Hertog, 2021, ACS nano.

Spatially resolved thermoelectric effects in operando semiconductor-metal nanowire heterostructures.

B. Gotsmann, M. Sousa, A. Lugstein, 2020, Nanoscale.

Ytterbium silicide nanostructures prepared by pulsed laser ablation in oven: Structural and electrical characterization

Z. Remeš, V. Dřínek, M. Klementová, 2019, Materials Letters.

Highly Transparent Contacts to the 1D Hole Gas in Ultra-Scaled Ge/Si Core/Shell Nanowires.

C. Lieber, E. Robin, N. Roch, 2019, ACS nano.

Coulomb blockade in monolithic and monocrystalline Al-Ge-Al nanowire heterostructures

N. Roch, C. Naud, O. Buisson, 2020, Applied Physics Letters.

Germanium nanowire microbolometer

E. Bertagnolli, S. Schmid, J. Smoliner, 2022, Nanotechnology.

Direct Synthesis of Hyperdoped Germanium Nanowires

S. Barth, M. Huth, A. Lugstein, 2018, ACS nano.

Reversible Al Propagation in SixGe1–x Nanowires: Implications for Electrical Contact Formation

T. Baron, P. Gentile, B. Salem, 2020, ACS applied nano materials.

Monolithic Axial and Radial Metal-Semiconductor Nanowire Heterostructures.

E. Bertagnolli, E. Robin, A. Lugstein, 2018, Nano letters.

Quasi One-Dimensional Metal-Semiconductor Heterostructures.

V. Dubrovskii, H. Detz, M. Stöger-Pollach, 2019, Nano letters.

Nanoscale aluminum plasmonic waveguide with monolithically integrated germanium detector

R. Oulton, N. Fukata, A. Lugstein, 2019, Applied Physics Letters.

Controlling Hot Charge Carrier Transfer in Monolithic AlSiAl Heterostructures for Plasmonic On-Chip Energy Harvesting.

A. Lugstein, Zehao Song, M. Sistani, 2023, Small.

Solution-based low-temperature synthesis of germanium nanorods and nanowires

S. Barth, C. Herzig, A. Limbeck, 2018, Monatshefte für Chemie - Chemical Monthly.

Drastic Changes in Material Composition and Electrical Properties of Gallium-Seeded Germanium Nanowires

S. Barth, I. Živadinović, A. Lugstein, 2019, Crystal Growth & Design.

Room-Temperature Quantum Ballistic Transport in Monolithic Ultrascaled Al–Ge–Al Nanowire Heterostructures

E. Bertagnolli, H. Detz, A. Lugstein, 2017, Nano letters.

In-situ high resolution TEM observation of Aluminum solid-state diffusion in Germanium nanowires: fabricating sub-10 nm Ge quantum dots

P. Gentile, E. Robin, N. Pauc, 2020, 2001.09026.

In-Situ Transmission Electron Microscopy Imaging of Aluminum Diffusion in Germanium Nanowires for the Fabrication of Sub-10 nm Ge Quantum Disks

P. Gentile, E. Robin, N. Pauc, 2020, ACS Applied Nano Materials.

In-situ high resolution TEM observation of Aluminum diffusion in Germanium nanowires: fabricating sub-10 nm Ge quantum dots

P. Gentile, E. Robin, N. Pauc, 2020 .

Ultrascaled Germanium Nanowires for Highly Sensitive Photodetection at the Quantum Ballistic Limit.

E. Bertagnolli, A. Lugstein, J. Greil, 2018, Nano letters.

Surface Protection and Activation of Mid-IR Plasmonic Waveguides for Spectroscopy of Liquids

B. Hinkov, G. Strasser, H. Detz, 2023, 2305.16522.

Polycrystalline Ge Nanosheets Embedded in Metal‐Semiconductor Heterostructures Enabling Wafer‐Scale 3D Integration of Ge Nanodevices with Self‐Aligned Al Contacts

J. Michler, P. Schweizer, W. Weber, 2021, Advanced Electronic Materials.

Electrical and Structural Properties of Si1−xGex Nanowires Prepared from a Single-Source Precursor

S. Barth, K. Dick, M. Wagner, 2023, Nanomaterials.

Reconfigurable Field‐Effect Transistor Technology via Heterogeneous Integration of SiGe with Crystalline Al Contacts

J. Aberl, W. Weber, X. Maeder, 2023, Advanced Electronic Materials.

Verifying the band gap narrowing in tensile strained Ge nanowires by electrical means

T. Baron, P. Gentile, B. Salem, 2020, Nanotechnology.

Al–Ge–Al Nanowire Heterostructure: From Single‐Hole Quantum Dot to Josephson Effect

E. Robin, N. Roch, C. Naud, 2021, Advanced materials.

Gate‐Tunable Negative Differential Resistance in Next‐Generation Ge Nanodevices and their Performance Metrics

W. Weber, A. Lugstein, M. D. den Hertog, 2021, Advanced Electronic Materials.

Low-frequency noise in quasi-ballistic monolithic Al–Ge–Al nanowire field effect transistors

D. Pogany, W. Weber, A. Lugstein, 2023, Applied Physics Letters.

Plasmon-assisted polarization-sensitive photodetection with tunable polarity for integrated silicon photonic communication systems

D. Pohl, W. Weber, B. Rellinghaus, 2021, Nanotechnology.

Electronic Transport Modulation in Ultrastrained Silicon Nanowire Devices.

X. Cartoixà, A. Lugstein, M. Palummo, 2024, ACS applied materials & interfaces.

Focused Ion Beam vs Focused Electron Beam Deposition of Cobalt Silicide Nanostructures Using Single-Source Precursors: Implications for Nanoelectronic Gates, Interconnects, and Spintronics

S. Barth, H. Plank, F. Porrati, 2022, ACS Applied Nano Materials.

Nanoscale Reconfigurable Si Transistors: From Wires to Sheets and Unto Multi‐Wire Channels

Corban G. E. Murphey, J. Cahoon, M. D. den Hertog, 2023, Advanced Electronic Materials.