Philippe Roussel

发表

Qualitative modelling of a multi-step process: The case of French breadmaking

Guy Della Valle, Amadou Ndiaye, Philippe Roussel, 2009, Expert Syst. Appl..

Approximating Standard Cell Delay Distributions by Reformulating the Most Probable Failure Point

Francky Catthoor, Dimitrios Soudris, Philippe Roussel, 2016, ERMAVSS@DATE.

The relationship between border traps characterized by AC admittance and BTI in III-V MOS devices

Aaron Thean, Philippe Roussel, Guido Groeseneken, 2015, 2015 IEEE International Reliability Physics Symposium.

Defect-centric perspective of time-dependent BTI variability

Philippe Roussel, Tibor Grasser, Guido Groeseneken, 2012, Microelectron. Reliab..

On the cost-effectiveness of matching repositories of pre-tested wafers for wafer-to-wafer 3D chip stacking

Erik Jan Marinissen, Philippe Roussel, Dimitrios Velenis, 2010, 2010 15th IEEE European Test Symposium.

Distribution and generation of traps in SiO2/Al2O3 gate stacks

Philippe Roussel, Robin Degraeve, Bogdan Govoreanu, 2007, Microelectron. Reliab..

The defect-centric perspective of device and circuit reliability — From individual defects to circuits

Francky Catthoor, Dimitri Linten, Philippe Roussel, 2015, 2015 45th European Solid State Device Research Conference (ESSDERC).

Transient voltage overshoot in TLP testing — Real or artifact?

Philippe Roussel, Steven Thijs, Guido Groeseneken, 2005, 2005 Electrical Overstress/Electrostatic Discharge Symposium.

LER and spacing variability on BEOL TDDB using E-field mapping: Impact of field acceleration

Philippe Roussel, Ivan Ciofi, Ingrid De Wolf, 2017, Microelectron. Reliab..

Exponent Monte Carlo for Quick Statistical Circuit Simulation

Paul Zuber, Philippe Roussel, Petr Dobrovolný, 2009, PATMOS.

Statistical characterization of standard cells using design of experiments with response surface modeling

Philippe Roussel, Miguel Corbalan, Gilson I. Wirth, 2011, 2011 48th ACM/EDAC/IEEE Design Automation Conference (DAC).

Comphy - A compact-physics framework for unified modeling of BTI

A. Subirats, Dimitri Linten, Geert Hellings, 2018, Microelectron. Reliab..

Characterization and simulation methodology for time-dependent variability in advanced technologies

Diederik Verkest, Francky Catthoor, Dimitri Linten, 2015, 2015 IEEE Custom Integrated Circuits Conference (CICC).

New methodology for modelling MOL TDDB coping with variability

Naoto Horiguchi, Dimitri Linten, Philippe Roussel, 2018, 2018 IEEE International Reliability Physics Symposium (IRPS).

Fast and accurate statistical characterization of standard cell libraries

Philippe Roussel, Miguel Corbalan, Gilson I. Wirth, 2011, Microelectron. Reliab..

Circuit and process co-design with vertical gate-all-around nanowire FET technology to extend CMOS scaling for 5nm and beyond technologies

Diederik Verkest, Anabela Veloso, Aaron Thean, 2014, 2014 44th European Solid State Device Research Conference (ESSDERC).

Yield prediction for architecture exploration in nanometer technology nodes:: a model and case study for memory organizations

Francky Catthoor, Philippe Roussel, Miguel Corbalan, 2006, Proceedings of the 4th International Conference on Hardware/Software Codesign and System Synthesis (CODES+ISSS '06).

Extended RVS characterisation of STT-MRAM devices: Enabling detection of AP/P switching and breakdown

Dimitri Linten, Philippe Roussel, S. Rao, 2018, 2018 IEEE International Reliability Physics Symposium (IRPS).

Impact of time-dependent variability on the yield and performance of 6T SRAM cells in an advanced HK/MG technology

Francky Catthoor, Philippe Roussel, Guido Groeseneken, 2015, 2015 International Conference on IC Design & Technology (ICICDT).

Impact of process variability on the radiation-induced soft error rate of decananometer SRAMs in hold and read conditions

Paul Zuber, Dimitri Linten, Eddy Simoen, 2011 .

VariabilityAware ModelingofSoCs :FromDeviceVariati onsto Manufactured System Yield

Philippe Roussel, B. Dierickx, Miguel Miranda, 2009 .

A compact model for the grounded-gate nMOS transistor behaviour under CDM ESD stress☆

Philippe Roussel, Guido Groeseneken, Herman Maes, 1998 .

The microarchitecture of the intel pentium 4 processor on 90nm technology

Philippe Roussel, Ronak Singhal, Joseph Hawkins, 2004 .

Origins and implications of increased channel hot carrier variability in nFinFETs

Naoto Horiguchi, Aaron Thean, Philippe Roussel, 2015, 2015 IEEE International Reliability Physics Symposium.

Editing First-Order Proofs: Programmed Rules vs Derived Rules

Philippe Roussel, Maria-Virginia Aponte, José Alberto Fernández, 1984, SLP.

Characterization of time-dependent variability using 32k transistor arrays in an advanced HK/MG technology

Francky Catthoor, Philippe Roussel, Guido Groeseneken, 2015, 2015 IEEE International Reliability Physics Symposium.

Four point probe ramped voltage stress as an efficient method to understand breakdown of STT-MRAM MgO tunnel junctions

Philippe Roussel, Guido Groeseneken, Koen Martens, 2015, 2015 IEEE International Reliability Physics Symposium.

Method to assess the impact of LER and spacing variation on BEOL dielectric reliability using 2D-field simulations for <20nm spacing

Philippe Roussel, Ivan Ciofi, Ingrid De Wolf, 2018, 2018 IEEE International Reliability Physics Symposium (IRPS).

Study of breakdown in STT-MRAM using ramped voltage stress and all-in-one maximum likelihood fit

Dimitri Linten, Philippe Roussel, Robin Degraeve, 2018, 2018 48th European Solid-State Device Research Conference (ESSDERC).

Variability aware modeling for yield enhancement of SRAM and logic

Paul Zuber, Philippe Roussel, Petr Dobrovolný, 2011, 2011 Design, Automation & Test in Europe.

Cophasing studies for an imaging multiaperture optical space interferometer

Philippe Roussel, Bertrand Calvel, Didier Morancais, 1994, Other Conferences.

A qualitative representation of French breadmaking process in view to develop a computerised decision support system : the mixing unit process

Guy Della Valle, Amadou Ndiaye, Philippe Roussel, 2005 .

Markets and technology needs for UHB-LEDs

Philippe Roussel, 2007, Manufacturing LEDs for Lighting and Display.

Time dependent variability in RMG-HKMG FinFETs: Impact of extraction scheme on stochastic NBTI

Naoto Horiguchi, Philippe Roussel, Ben Kaczer, 2015, 2015 IEEE International Reliability Physics Symposium.

The defect-centric perspective of device and circuit reliability—From gate oxide defects to circuits

Dimitri Linten, Philippe Roussel, Tibor Grasser, 2016 .

Reliability of SiGe channel MOS

Geert Hellings, Jerome Mitard, Liesbeth Witters, 2012 .

Technology, industry and market trends in WBG power module packaging

Philippe Roussel, Jerome Azemar, P. Roussel, 2014 .

In-orbit demonstration of novel solid state micro-accelerometers☆

Philippe Roussel, Manfred Trischberger, Gerhard Kulzer, 1992 .

Gate oxide breakdown in FET devices and circuits: From nanoscale physics to system-level reliability

Philippe Roussel, Guido Groeseneken, Ben Kaczer, 2007, Microelectron. Reliab..

Analytic variability study of inference accuracy in RRAM arrays with a binary tree winner-take-all circuit for neuromorphic applications

Rudy Lauwereins, Wim Dehaene, Philippe Roussel, 2018, 2018 48th European Solid-State Device Research Conference (ESSDERC).

A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability

Francky Catthoor, Dimitri Linten, Philippe Roussel, 2018, Microelectron. Reliab..

The birth of Prolog

Philippe Roussel, Alain Colmerauer, P. Roussel, 1993, HOPL-II.

Recent trends in the electrical characterization and reliability assessment of CMOS devices

Philippe Roussel, Guido Groeseneken, Jacopo Franco, 2012 .

NBTI in Si0.55Ge0.45 cladding p-FinFETs: Porting the superior reliability from planar to 3D architectures

Naoto Horiguchi, Aaron Thean, Philippe Roussel, 2015, 2015 IEEE International Reliability Physics Symposium.

Physics-based device aging modelling framework for accurate circuit reliability assessment

Dimitri Linten, Philippe Roussel, Guido Groeseneken, 2021, 2021 IEEE International Reliability Physics Symposium (IRPS).

Characterization by spectroscopic ellipsometry of buried layer structures in silicon formed by ion beam synthesis

Philippe Roussel, Jan Vanhellemont, P. Roussel, 1992 .

Complete degradation mapping of stacked gate-all-around Si nanowire transistors considering both intrinsic and extrinsic effects

Naoto Horiguchi, Dimitri Linten, Philippe Roussel, 2017, 2017 IEEE International Electron Devices Meeting (IEDM).

Toward a streamlined projection of small Device BTI lifetime distributions

Philippe Roussel, Tibor Grasser, Guido Groeseneken, 2012 .

Thermal stability analysis and modelling of advanced perpendicular magnetic tunnel junctions

Dimitri Linten, Philippe Roussel, Guido Groeseneken, 2018 .

Reliability study of liner/barrier/seed options for via-middle TSV's with 3 micron diameter and below

Eric Beyne, Philippe Roussel, Stefaan Van Huylenbroeck, 2015, 2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM).

Charge trapping and dielectric reliability of SiO/sub 2/-Al/sub 2/O/sub 3/ gate stacks with TiN electrodes

Philippe Roussel, Guido Groeseneken, Luigi Pantisano, 2003 .

How far can we analyze oxide traps spatially with charge injection techniques

Philippe Roussel, Guido Groeseneken, Ben Kaczer, 2008 .

Demonstration of sufficient BTI reliability for a 14-nm finFET 1.8 V I/O technology featuring a thick ALD SiO2 IL and Ge p-channel

Naoto Horiguchi, Dimitri Linten, Geert Hellings, 2017, 2017 IEEE International Reliability Physics Symposium (IRPS).

Area scaling and voltage dependence of time-to-breakdown in magnetic tunnel junctions

Philippe Roussel, Guido Groeseneken, Robin Degraeve, 2002 .

Electromigration study of sub-100nm Cu-lines

Philippe Roussel, Karen Maex, J. Michelon, 2004 .

Strong correlation between dielectric reliability and charge trapping in SiO2/Al2O3 gate stacks with TiN electrodes

Philippe Roussel, Guido Groeseneken, Luigi Pantisano, 2002 .

Interface Trap Characterization and Fermi Level Pinning in Si-Passivated Ge/HfO2 Capacitors

Philippe Roussel, Guido Groeseneken, Ben Kaczer, 2006 .

Toward a streamlined projection of small device bias temperature instability lifetime distributions

Philippe Roussel, Tibor Grasser, Guido Groeseneken, 2013 .

Investigation of Bias-Temperature Instability in work-function-tuned high-k/metal-gate stacks

Anabela Veloso, Philippe Roussel, Tibor Grasser, 2009 .

Channel Hot Carrier Degradation Mechanism in Long/Short Channel $n$-FinFETs

Naoto Horiguchi, Philippe Roussel, Guido Groeseneken, 2013, IEEE Transactions on Electron Devices.

A consistent model for oxide trap profiling with the Trap Spectroscopy by Charge Injection and Sensing (TSCIS) technique

Eddy Simoen, Philippe Roussel, Guido Groeseneken, 2010 .

Understanding Endurance in TiN/a-Si/TiOx/TiN RRAM Devices

Philippe Roussel, Robin Degraeve, Gouri Sankar Kar, 2018, 2018 IEEE International Memory Workshop (IMW).

Atomic Layer Deposition of Ruthenium with TiN Interface for Sub-10 nm Advanced Interconnects beyond Copper.

Christopher J. Wilson, Philippe Roussel, Christoph Adelmann, 2016, ACS applied materials & interfaces.

Improved PBTI reliability in junction-less nFET fabricated at low thermal budget for 3D Sequential Integration

Dimitri Linten, Anne Vandooren, Philippe Roussel, 2018, 2018 International Integrated Reliability Workshop (IIRW).

Stress polarity dependence of degradation and breakdown of SiO/sub 2//high-k stacks

Philippe Roussel, Guido Groeseneken, B. Kaczer, 2003, 2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual..

Physical Model for the Steep Subthreshold Slope in Ferroelectric FETs

Philippe Roussel, Jan Van Houdt, 2018, IEEE Electron Device Letters.

Accurate reliability evaluation of non-uniform ultrathin oxynitride and high-k layers

Philippe Roussel, Guido Groeseneken, Luigi Pantisano, 2003, 2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual..

Stochastic Modeling of the Impact of Random Dopants on Hot-Carrier Degradation in n-FinFETs

Dimitri Linten, Geert Hellings, Philippe Roussel, 2019, IEEE Electron Device Letters.