Xiaochuan Xia

发表

Electrically driven ultraviolet random lasing from an n-MgZnO/i-ZnO/SiO2/p-Si asymmetric double heterojunction.

Zhifeng Shi, G. Du, Wang Zhao, 2013, Nanoscale.

Influence of Cu dopant on the structure and optical properties of ZnO thin films prepared by MOCVD

Yingmin Luo, G. Du, Hongwei Liang, 2015, Journal of Materials Science: Materials in Electronics.

Enhancing the sensitivity of the reference electrode free AlGaN/GaN HEMT based pH sensors by controlling the threshold voltage

Heqiu Zhang, Wenping Guo, Aqrab ul Ahmad, 2020 .

Crack-free ultraviolet AlGaN/GaN distributed Bragg reflectors grown by MOVPE on 6H-SiC(0 0 0 1)

Pengcheng Tao, G. Du, Hongwei Liang, 2014 .

Enhanced output power of near-ultraviolet LEDs with AlGaN/GaN distributed Bragg reflectors on 6H-SiC by metal-organic chemical vapor deposition

Yingmin Luo, Pengcheng Tao, G. Du, 2015 .

Crack-free AlGaN/GaN distributed Bragg reflectors synthesized by insertion of a thin SiNx interlayer grown on 6H-SiC substrate by metal–organic chemical vapor deposition

Yingmin Luo, Wenping Guo, Pengcheng Tao, 2014 .

Improvement of quality and strain relaxation of GaN epilayer grown on SiC substrate by in situ SiNx interlayer

Dechao Yang, G. Du, Hongwei Liang, 2013, Journal of Materials Science: Materials in Electronics.

Improvement of crystal quality and UV transparence of dielectric Ga2O3 thin films via thermal annealing in N2 atmosphere

J. Bian, Yingmin Luo, H. Zhang, 2012, Journal of Materials Science: Materials in Electronics.

Synthesis of GaN network by nitridation of hexagonal ε-Ga2O3 film

G. Du, Yuanpeng Chen, Hongwei Liang, 2017, Journal of Materials Science: Materials in Electronics.

Introducing Ga2O3 thin films as novel electron blocking layer to ZnO/p-GaN heterojunction LED

J. Bian, Yuanda Liu, G. Du, 2012 .

Rediscovery of the Role of the i-Layer in n-ZnO/SiO2/p-GaN Through Observations from Both the ZnO and GaN Sides

J. Bian, Yingmin Luo, Yuanda Liu, 2012, Journal of Electronic Materials.

Strain and microstructures of GaN epilayers with thick InGaN interlayer grown by MOCVD

Jianxun Liu, Yingmin Luo, Huolin Huang, 2017 .

Degradation Mechanism of Crystalline Quality and Luminescence in In0.42Ga0.58N/GaN Double Heterostructures with Porous InGaN Layer

Jianxun Liu, Yingmin Luo, Huolin Huang, 2017 .

Dominant UV emission from p-MgZnO/n-GaN light emitting diodes

Dechao Yang, Zhifeng Shi, Xiangping Li, 2012 .

Study on the p-MgZnO/i-ZnO/n-MgZnO light-emitting diode fabricated by MOCVD

K. Huang, Yanbo Liu, G. Du, 2009 .

Effect of the magnesium composition on the properties of MgxZn1−xO-based homojunction light-emitting diodes

Xiangping Li, G. Du, Wang Zhao, 2008 .

Study on the properties of MgxZn1−xO-based homojunction light-emitting diodes fabricated by MOCVD

G. Du, Xiang Li, Wenyan Zhao, 2007 .

The interface trap analysis of AlGaN/GaN high electron mobility transistors with temperature based on conductance method

Heqiu Zhang, X. Liang, Yongfeng Liang, 2022, Journal of Physics: Conference Series.

Highly Efficient and Flexible Scintillation Screen Based on Manganese (II) Activated 2D Perovskite for Planar and Nonplanar High‐Resolution X‐Ray Imaging

Zhenzhong Zhang, Hongwei Liang, Xiaochuan Xia, 2022, Advanced Optical Materials.

Electricity generation from a Ni-Al layered double hydroxide-based flexible generator driven by natural water evaporation

Shichong Xu, F. Gao, Chengren Li, 2019, Nano Energy.

Influence of Sb valency on the conductivity type of Sb-doped ZnO

Yingmin Luo, G. Du, Yuanpeng Chen, 2015 .

The structure and optical characters of the ZnO film grown on GaAs/Al2O3 substrate

Xiangping Li, G. Du, Guoxing Li, 2009 .

Properties of ZnO thin films grown on Si substrates by photo-assisted MOCVD

K. Huang, Xiangping Li, G. Du, 2008 .

Optical and electronic properties of ZnO:P/n+-Si heterostructures fabricated by metalorganic chemical vapour deposition

K. Huang, Xiangping Li, G. Du, 2007 .

n-ZnO/p-GaN heterojunction light-emitting diodes with a polarization-induced graded-p-AlxGa1−xN electron-blocking layer

Yuanda Liu, G. Du, Hezhi Zhang, 2013 .

Growth temperature impact on film quality of hBN grown on Al2O3 using non-catalyzed borazane CVD

Jianjun Shi, Heqiu Zhang, G. Du, 2017, Journal of Materials Science: Materials in Electronics.

Current transport mechanism of Mg/Au ohmic contacts to lightly doped n-type β-Ga2O3

Jianjun Shi, Heqiu Zhang, Q. Abbas, 2019, Journal of Semiconductors.

Study of the thermal stability of the H-related donors in high resistivity ZnO:Cu thin films by high-pressure H2 treatment

Yuanda Liu, G. Du, C. Ling, 2013 .

Comparative investigation of three types of ethanol sensor based on NiO-SnO2 composite nanofibers

Xiangping Li, G. Du, Guoguang Wu, 2012 .

The luminescence of ZnO film grown on GaAs interlayer by PA-MOCVD

Zhifeng Shi, G. Du, Wang Zhao, 2011 .

Photofacilitated Controllable Growth of ZnO Films Using Photoassisted Metal Organic Chemical Vapor Deposition

Zhifeng Shi, G. Du, Wei Yin, 2012 .

Study of arsenic doping ZnO thin films grown by metal–organic chemical vapor deposition via x-ray photoelectron spectroscopy

Xiangping Li, Fubin Gao, G. Du, 2008 .

The lattice distortion of β-Ga2O3 film grown on c-plane sapphire

Xiaona Li, Pengcheng Tao, G. Du, 2015, Journal of Materials Science: Materials in Electronics.

Hexagonal phase-pure wide band gap ε-Ga2O3 films grown on 6H-SiC substrates by metal organic chemical vapor deposition

Guotong Du, Hongwei Liang, Qiuju Feng, 2016 .

A preliminary study of SF6 based inductively coupled plasma etching techniques for beta gallium trioxide thin film

Yingmin Luo, G. Du, Yuanpeng Chen, 2015 .

Influence of N2 and O2 annealing treatment on the optical bandgap of polycrystalline Ga2O3:Cu films

G. Du, Yi Cheng, Rensheng Shen, 2013 .

Influence of annealing temperature on the properties of Ga2O3:Cu films

Dechao Yang, G. Du, Yi Cheng, 2013 .

Band gap broadening and photoluminescence properties investigation in Ga2O3 polycrystal

Zhenzhong Zhang, Yuanda Liu, G. Du, 2013, Journal of Materials Science: Materials in Electronics.

Dominant ultraviolet electroluminescence from p-ZnO:As/n-SiC(6H) heterojunction light-emitting diodes

Zhifeng Shi, G. Du, Wei Yin, 2012 .

Effect of growth temperature on structure and optical characters of NiO films fabricated by PA-MOCVD

Jinzhong Wang, Zhifeng Shi, G. Du, 2012 .

Evolution of the crystallographic planes of cone-shaped patterned sapphire substrate treated by wet etching

Dechao Yang, G. Du, Yuantao Zhang, 2014 .

Growth and characterization of porous sp2-BN films with hollow spheres under hydrogen etching effect via borazane thermal CVD

Jianjun Shi, Heqiu Zhang, G. Du, 2018, Applied Surface Science.

Hydrogen Gas Adsorption on Pd‐ and Pt‐Decorated GaN (0001) Surface: A First‐Principles Study

Heqiu Zhang, Xiaochuan Xia, Dongyang Xue, 2019, physica status solidi (b).

Growth Pressure Controlled Nucleation Epitaxy of Pure Phase ε- and β-Ga2O3 Films on Al2O3 via Metal–Organic Chemical Vapor Deposition

G. Du, Yuanpeng Chen, Q. Abbas, 2018 .

Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n+-GaN polarization-induced backward tunneling junction grown by metal-organic chemical vapor deposition on sapphire substrate

Yingmin Luo, Wenping Guo, Pengcheng Tao, 2014, Scientific Reports.

Negative differential resistance in low Al-composition p-GaN/Mg-doped Al0.15Ga0.85N/n+-GaN hetero-junction grown by metal-organic chemical vapor deposition on sapphire substrate

Pengcheng Tao, G. Du, Rensheng Shen, 2014 .

Oxygen partial pressure controlling epitaxy of CuGaO2 and CuGa2O4 films on β-Ga2O3 substrate by reactive deposition epitaxy

Jianjun Shi, Xiaochuan Xia, X. Xia, 2021, Ceramics International.

Band alignment analysis of CuGaO2/β-Ga2O3 heterojunction and application to deep-UV photodetector

Jianjun Shi, Q. Abbas, Xiaochuan Xia, 2021 .

Stress State of GaN Epilayer Grown on Sapphire and 6H-SiC Substrates

Dechao Yang, Yingmin Luo, G. Du, 2013 .

High-temperature performance of gallium-nitride-based pin alpha-particle detectors grown on sapphire substrates

Jianxun Liu, Heqiu Zhang, Pengcheng Tao, 2018 .

Vertical conducting ultraviolet light-emitting diodes based on p-ZnO:As/n-GaN/n-SiC heterostructure

Zhifeng Shi, G. Du, Hui Wang, 2013 .

A study of the signal rising edge produced by a charge sensitive preamplifier connected to a 4H-SiC detector

H. Yi, R. Fan, H. Jing, 2023, Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment.

Timing Performance Simulation for 3D 4H-SiC Detector

Zhenzhong Zhang, Xin Shi, Xinbo Zou, 2021, Micromachines.

Study on the luminescence properties of n-ZnO/p-Si hetero-junction diode grown by MOCVD

Xiangping Li, G. Du, Yan Ma, 2008 .

A Study of GaN Grown on SiH 4 Pre-Treated 6H-SiC Substrates

Yingmin Luo, G. Du, Rensheng Shen, 2012 .

The influence of reactor height adjustment on properties in GaN films grown on 6H-SiC by metal organic chemical vapor deposition

Yingmin Luo, Pengcheng Tao, G. Du, 2014, Journal of Materials Science: Materials in Electronics.

Research on the performance of a diamond detector for the cross-section measurements at CSNS Back-n

K. Sun, Heqiu Zhang, Yonghao Chen, 2023, Nuclear Instruments and Methods in Physics Research Section A : Accelerators, Spectrometers, Detectors and Associated Equipment.

Research on the application of pulse shape discrimination method in (n, lcp) reaction cross-section measurements

K. Sun, H. Yi, R. Fan, 2023, Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment.

Catalytic growth and characterization of single crystalline Zn doped p-type β-Ga2O3 nanowires

Jiayuan Liu, Xiaochuan Xia, Y. Xing, 2016 .

Neutron irradiation and polarization effect of 4H-SiC Schottky detector

Xiaochuan Xia, M. Niu, Wei Jiang, 2024, Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment.

Isoelectronic aluminum-doped gallium nitride alpha-voltaic cell with efficiency exceeding 4.5%

Wuying Ma, Linyue Liu, Xiaochuan Xia, 2023, Communications Materials.

Vertically conducting deep-ultraviolet light-emitting diodes with interband tunneling junction grown on 6H-SiC substrate

Pengcheng Tao, G. Du, Yuantao Zhang, 2016 .

Ultraviolet-Visible Electroluminescence of a p-ZnO:As/n-Si Device Formed by the GaAs Interlayer Doping Method

Zhifeng Shi, Xiangping Li, G. Du, 2011 .

Electroluminescence of the p-ZnO:As/n-ZnO LEDs grown on ITO glass coated with GaAs interlayer

Zhifeng Shi, Xiangping Li, G. Du, 2011 .

Room temperature electroluminescence from ZnO/Si heterojunction devices grown by metal–organic chemical vapor deposition

Xiangping Li, G. Du, Wang Zhao, 2009 .

Improved performance of AlGaN/GaN HEMT based H+ sensors by surface hydroxylation treatment

Heqiu Zhang, Wenping Guo, Xiaochuan Xia, 2021 .

TiO2 functionalized AlGaN/GaN HEMT gas sensor based on capacitance change strategy under room temperature

Heqiu Zhang, Ruinian Hua, Litao Liu, 2023, Materials Research Bulletin.

Surface chemical composition and HRTEM analysis of heteroepitaxial β-Ga2O3 films grown by MOCVD

Yan Ma, Wancheng Li, Rensheng Shen, 2024, Applied Surface Science.