Junjing Deng

发表

Phase distribution in eutectic AuSn layer changed by temperature ramping rate and its effect on the performance of GaN-based vertical structure LEDs

Zhizhong Chen, Tongjun Yu, Z. Qin, 2010 .

GaN-based light-emitting diodes with photonic crystals structures fabricated by porous anodic alumina template.

Zhizhong Chen, Tongjun Yu, T. Dai, 2011, Optics express.

Origin and regulation of oxygen redox instability in high-voltage battery cathodes

Zonghai Chen, K. Amine, Xuning Feng, 2022, Nature Energy.

Phase reaction of Au/Sn solder bonding for GaN-based vertical structure light emitting diodes

Zhizhong Chen, Z. Qin, P. Tian, 2010 .

Epitaxial lateral overgrowth of InGaN/GaN multiple quantum wells on HVPE GaN template

Guoyi Zhang, Y. Tao, Junjing Deng, 2012 .

Single ZnO Nanowire/p‐type GaN Heterojunctions for Photovoltaic Devices and UV Light‐Emitting Diodes

L. Dai, Z. Liao, Qing Zhao, 2010, Advanced materials.

Study on the formation of dodecagonal pyramid on nitrogen polar GaN surface etched by hot H3PO4

L. Sang, Z. Qin, Zhao‐Xu Chen, 2009 .