J. Chu

发表

Investigation of broad-band quantum-well infrared photodetectors for 8-14-/spl mu/m detection

S. S. Li, J. Chu, A. Singh, 1999 .

Investigation of broadband p-type quantum-well infrared photodetectors

Shengshi Li, J. Chu, A. Singh, 1998 .

Strain Layer Quantum Well Infrared Photodetectors(invited)

M. Tidrow, Xudong Jiang, Shengshi Li, 1998 .

The growth and characterization of two new P-type compressively strained layer InGaAs/AlGaAs/GaAs quantum well infrared photodetectors for mid- and long-wavelength infrared detection

P. Ho, Shengshi Li, J. Chu, 1997 .

Investigation of Si-doped p-type {AlGaAs}/{GaAs}, {AlGaAs}/{InGaAs} quantum well infrared photodetectors and multiquantum wells grown on (3 1 1)A GaAs

A. Chin, S. S. Li, C. Liao, 1997 .

A new compressively strained‐layer p‐type InGaAs/AlGaAs/GaAs step bound to miniband quantum well infrared photodetector with a detection peak at 10.4 μm

Sheng S. Li, J. Chu, P. Ho, 1996 .

A normal incidence two‐color p‐type compressive strained‐layer In0.4Ga0.6As/GaAs quantum well infrared photodetector for 3–5 μm and 8–12 μm detection

Y. H. Wang, P. Ho, Shengshi Li, 1994 .

Ultralow dark current p‐type strained‐layer InGaAs/InAlAs quantum well infrared photodetector with background limited performance for T≤100 K

Sheng S. Li, J. Chu, Y. H. Wang, 1994 .

Broadband quantum well infrared photodetectors

Sheng S. Li, J. Chu, Jiangchi Chiang, 1999, Photonics West.