Gaudenzio Meneghesso

发表

InRel-NPower, Innovative Reliable Nitride based Power Devices and Applications, Horizon 2020

Gaudenzio Meneghesso, 2018 .

Imaging and reliability of capacitive RF MEMS switches in III-V technology

Pietro Siciliano, Gaudenzio Meneghesso, Anna Persano, 2013, 2013 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP).

ESD protection structures for 20 V and 40 V power supply suitable for BCD6 smart power technology

Gaudenzio Meneghesso, Enrico Zanoni, Simona Podda, 2002, Microelectron. Reliab..

Overstress and electrostatic discharge in CMOS and BCD integrated circuits

Gaudenzio Meneghesso, Giuseppe Croce, Mauro Ciappa, 2000 .

Near-UV LED-based systems for low-cost and compact oxygen-sensing systems in gas and liquids

Angelo Cenedese, Gaudenzio Meneghesso, Enrico Zanoni, 2019, OPTO.

Trapping induced parasitic effects in GaN-HEMT for power switching applications

Gaudenzio Meneghesso, Enrico Zanoni, Peter Moens, 2015, 2015 International Conference on IC Design & Technology (ICICDT).

Effects and exploitation of tunable white light for circadian rhythm and human-centric lighting

Gaudenzio Meneghesso, Enrico Zanoni, Nicola Trivellin, 2015, 2015 IEEE 1st International Forum on Research and Technologies for Society and Industry Leveraging a better tomorrow (RTSI).

Degradation mechanisms of heterogeneous III-V/Silicon loop-mirror laser diodes for photonic integrated circuits

Gaudenzio Meneghesso, John E. Bowers, Enrico Zanoni, 2018, Microelectron. Reliab..

Editorial

Gaudenzio Meneghesso, Francesco Iannuzzo, Mauro Ciappa, 2018, Microelectron. Reliab..

K-band capacitive MEMS switches on GaAs substrate: Design, fabrication, and reliability

Pietro Siciliano, Gaudenzio Meneghesso, Anna Persano, 2012, Microelectron. Reliab..

Failure causes and mechanisms of retrofit LED lamps

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2015, Microelectron. Reliab..

Backside Failure Analysis of GaAs ICs after ESD tests

Gaudenzio Meneghesso, Simona Podda, Massimo Vanzi, 2002, Microelectron. Reliab..

Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences

Alessandro Paccagnella, Gaudenzio Meneghesso, Enrico Zanoni, 2014, 2014 44th European Solid State Device Research Conference (ESSDERC).

Time-To-Latch-Up investigation of SCR devices as ESD protection structures on 65 nm technology platform

Gaudenzio Meneghesso, Augusto Tazzoli, C. Bergonzoni, 2010, Microelectron. Reliab..

Degradation and recovery of high-periodicity InGaN/GaN MQWs under optical stress in short-circuit condition

Gaudenzio Meneghesso, Matteo Meneghini, Alessandro Caria, 2020, OPTO.

On-wafer RF stress and trapping kinetics of Fe-doped AlGaN/GaN HEMTs

Gaudenzio Meneghesso, Hervé Blanck, Enrico Zanoni, 2018, Microelectron. Reliab..

Thermally-activated degradation of InGaN-based laser diodes: Effect on threshold current and forward voltage

Gaudenzio Meneghesso, Enrico Zanoni, J. Wagner, 2014, Microelectron. Reliab..

Improved stability in wide-recess InP HEMTs by means of a fully passivated two-step-recess gate

Tetsuya Suemitsu, Gaudenzio Meneghesso, Enrico Zanoni, 2006, IEICE Electron. Express.

Influence of fluorine-based dry etching on electrical parameters of AlGaN/GaN-on-Si High Electron Mobility Transistors

Claudio Lanzieri, Gaudenzio Meneghesso, Enrico Zanoni, 2013, 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

Enhanced permanent degradation of organic TFT under electrical stress and visible light exposure

Gaudenzio Meneghesso, Daniel Donoval, Jaroslav Kovác, 2012, Microelectron. Reliab..

Stability and performance evaluation of high-brightness light-emitting diodes under DC and pulsed bias conditions

Gaudenzio Meneghesso, Simone Buso, Enrico Zanoni, 2006, SPIE Optics + Photonics.

Test structures and testing methods for electrostatic discharge: results of PROPHECY project

Gaudenzio Meneghesso, Paolo Pavan, Enrico Zanoni, 1999 .

Study and Development of a Fluorescence Based Sensor System for Monitoring Oxygen in Wine Production: The WOW Project

Gaudenzio Meneghesso, Giuseppe Belgioioso, Enrico Zanoni, 2018, Sensors.

Comparison between positive and negative constant current stress on dye-sensitized solar cells

Gaudenzio Meneghesso, Andrea Reale, Aldo Di Carlo, 2013, Microelectron. Reliab..

Defect generation in deep-UV AlGaN-based LEDs investigated by electrical and spectroscopic characterisation

Gaudenzio Meneghesso, Enrico Zanoni, Sven Einfeldt, 2017, OPTO.

Field and hot electron-induced degradation in GaN-based power MIS-HEMTs

Gaudenzio Meneghesso, Enrico Zanoni, Peter Moens, 2017, Microelectron. Reliab..

ESD degradation and robustness of RGB LEDs and modules: An investigation based on combined electrical and optical measurements

Gaudenzio Meneghesso, Enrico Zanoni, Giovanni Verzellesi, 2014, Microelectron. Reliab..

Electrical characterization and reliability study of HEMTs on composite substrates under high electric fields

Gaudenzio Meneghesso, Enrico Zanoni, Augusto Tazzoli, 2008, Microelectron. Reliab..

High brightness GaN LEDs degradation during dc and pulsed stress

Ruggero Pintus, Gaudenzio Meneghesso, Enrico Zanoni, 2006, Microelectron. Reliab..

Next generation FinFET devices in bulk silicon technology and their benefits for ESD robustness

Mirko Scholz, Dimitri Linten, Liesbeth Witters, 2009 .

High temperature electro-optical degradation of InGaN/GaN HBLEDs

Gaudenzio Meneghesso, Massimo Vanzi, Enrico Zanoni, 2007, Microelectron. Reliab..

A novel test methodology for RON and VTH monitoring in GaN HEMTs during switch-mode operation

Gaudenzio Meneghesso, Giovanni Verzellesi, Alessandro Chini, 2017, 2017 IEEE International Reliability Physics Symposium (IRPS).

Degradation of InGaN laser diodes caused by temperature- and current-driven diffusion processes

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2016, Microelectron. Reliab..

Stress-induced instabilities of shunt paths in high efficiency MWT solar cells

Gaudenzio Meneghesso, Enrico Zanoni, Giovanna Mura, 2015, 2015 IEEE International Reliability Physics Symposium.

(Invited) intrinsic reliability assessment of 650V rated AlGaN/GaN based power devices: an industry perspective

Balaji Padmanabhan, Frederick Declercq, Gaudenzio Meneghesso, 2016 .

2014 44th European Solid State Device Research Conference (ESSDERC)

Gaudenzio Meneghesso, Pavan Paolo, Bez Roberto, 2014 .

Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2016, Microelectron. Reliab..

First Reliability Demonstration of Sub-200-nm AlN/GaN-on-Silicon Double-Heterostructure HEMTs for Ka-Band Applications

Gaudenzio Meneghesso, Nathalie Rolland, Enrico Zanoni, 2013, IEEE Transactions on Device and Materials Reliability.

Analysis and design of extreme intensity irradiation devices for research applications

Gaudenzio Meneghesso, Michele Forzan, Nicola Trivellin, 2020, OPTO.

Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs

Claudio Lanzieri, Gaudenzio Meneghesso, Enrico Zanoni, 2015, Microelectron. Reliab..

Origin of the low-forward leakage current in InGaN-based LEDs

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2019, OPTO.

Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate

Gaudenzio Meneghesso, Matteo Meneghini, Oliver Hilt, 2017 .

Reliability study of organic complementary logic inverters using constant voltage stress

Gaudenzio Meneghesso, Michele Muccini, Nicola Wrachien, 2015 .

New Issues on Characterization and Reliability of MEMS Switches

Gaudenzio Meneghesso, Augusto Tazzoli, 2008 .

Understanding the degradation processes of GaN based LEDs submitted to extremely high current density

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2017, Microelectron. Reliab..

Gaudenzio Meneghesso, John E. Bowers, Enrico Zanoni, 2018, OPTO.

Multi-gate devices for the 32-nm node and beyond: advantages and issues

Alessandro Paccagnella, Cor Claeys, Eddy Simoen, 2008 .

Reliability of GaN-Based Power Devices

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2018 .

Reliability analysis of AlGaN/GaN HEMT on SopSiC composite substrate under long-term DC-life test

Gaudenzio Meneghesso, Enrico Zanoni, Augusto Tazzoli, 2009, Microelectron. Reliab..

Hot carrier aging degradation phenomena in GaN based MESFETs

Gaudenzio Meneghesso, Christophe Gaquiere, Enrico Zanoni, 2004 .

Trap-assisted tunneling contributions to subthreshold forward current in InGaN/GaN light-emitting diodes

Giovanni Ghione, Gaudenzio Meneghesso, Luigi Rovati, 2015, SPIE Optical Engineering + Applications.

Stress-induced degradation of p- and n-type organic thin-film-transistors in the ON and OFF states

Gaudenzio Meneghesso, Michele Muccini, Nicola Wrachien, 2014, Microelectron. Reliab..

Study of short-term instabilities of InGaN/GaN light-emitting diodes by means of capacitance-voltage measurements and deep-level transient spectroscopy

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2004, SPIE Optics + Photonics.

Thermal storage effects on AlGaN/GaN HEMT

Claudio Lanzieri, Gaudenzio Meneghesso, Marco Peroni, 2008, Microelectron. Reliab..

Degradation mechanisms of high-power white LEDs activated by current and temperature

Gaudenzio Meneghesso, Enrico Zanoni, Nicola Trivellin, 2011, Microelectron. Reliab..

Degradation of InGaN-based LEDs related to charge diffusion and build-up

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2016, Microelectron. Reliab..

Degradation mechanisms of dye-sensitized solar cells: Light, bias and temperature effects

Gaudenzio Meneghesso, Andrea Reale, Aldo Di Carlo, 2015, 2015 IEEE International Reliability Physics Symposium.

Changes in the Mg profile and in dislocations induced by high temperature annealing of blue LEDs

Gaudenzio Meneghesso, Enrico Zanoni, Nicola Trivellin, 2013, Photonics West - Optoelectronic Materials and Devices.

Reliability Investigation of GaN HEMTs for MMICs Applications

Claudio Lanzieri, Gaudenzio Meneghesso, Enrico Zanoni, 2014, Micromachines.

ESD characterization of multi-chip RGB LEDs

Gaudenzio Meneghesso, Enrico Zanoni, Diego Barbisan, 2013, Microelectron. Reliab..

Characterization of high-voltage charge-trapping effects in GaN-based power HEMTs

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2014, 2014 44th European Solid State Device Research Conference (ESSDERC).

Degradation of InGaN lasers: Role of non-radiative recombination and injection efficiency

Gaudenzio Meneghesso, Enrico Zanoni, Daisuke Ueda, 2011, Microelectron. Reliab..

Comparison of the performances of an InAlN/GaN HEMT with a Mo/Au gate or a Ni/Pt/Au gate

Gaudenzio Meneghesso, Enrico Zanoni, Christian Dua, 2013, Microelectron. Reliab..

Degradation induced by 2-MeV alpha particles on AlGaN/GaN high electron mobility transistors

Alessandro Paccagnella, Gaudenzio Meneghesso, Enrico Zanoni, 2006, Microelectron. Reliab..

Evidence for temperature-dependent buffer-induced trapping in GaN-on-silicon power transistors

Gaudenzio Meneghesso, Peter Moens, Matteo Meneghini, 2015, 2015 IEEE International Reliability Physics Symposium.

Investigation on ESD-stressed GaN/InGaN-on-sapphire blue LEDs

Gaudenzio Meneghesso, Simona Podda, Massimo Vanzi, 2001, Microelectronics and reliability.

Effects of thermal and electrical stress on DH4T-based organic thin-film-transistors with PMMA gate dielectrics

Gaudenzio Meneghesso, Michele Muccini, Andrea Stefani, 2015, Microelectron. Reliab..

Impact of dislocations on DLTS spectra and degradation of InGaN-based laser diodes

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2018, Microelectron. Reliab..

Characterization and endurance study of aluminate/silicate/garnet/nitride phosphors for high-performance SSL

Gaudenzio Meneghesso, Enrico Zanoni, Nicola Trivellin, 2013, Photonics West - Optoelectronic Materials and Devices.

Impact of Sidewall Etching on the Dynamic Performance of GaN-on-Si E-Mode Transistors

Gaudenzio Meneghesso, A. Nardo, Enrico Zanoni, 2018, 2019 IEEE International Reliability Physics Symposium (IRPS).

Anti-series GGNMOS ESD clamp for space application IC's

Dimitri Linten, Jan Wouters, Gaudenzio Meneghesso, 2014, Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2014.

Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level

Gaudenzio Meneghesso, Stefaan Decoutere, Enrico Zanoni, 2017, Microelectron. Reliab..

Challenges for highly reliable GaN-based LEDs

Gaudenzio Meneghesso, Enrico Zanoni, Nicola Trivellin, 2019, OPTO.

Phosphors for LED-based light sources: Thermal properties and reliability issues

Gaudenzio Meneghesso, Enrico Zanoni, Massimo Vanzi, 2012, Microelectron. Reliab..

DC-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs: performance and reliability issues

Gaudenzio Meneghesso, Enrico Zanoni, Giovanni Verzellesi, 2005, Microelectron. Reliab..

Current induced degradation study on state of the art DUV LEDs

Gaudenzio Meneghesso, Enrico Zanoni, Nicola Trivellin, 2018, Microelectron. Reliab..

IV, noise and electroluminescence analysis of stress-induced percolation paths in AlGaN/GaN high electron mobility transistors

Sergey Bychikhin, Dionyz Pogany, Gaudenzio Meneghesso, 2012, Microelectron. Reliab..

Dependence of degradation on InGaN quantum well position: a study based on color coded structures

Gaudenzio Meneghesso, Matteo Meneghini, Alessandro Caria, 2020, OPTO.

Thermal and electrical stress effects of electrical and optical characteristics of Alq3/NPD OLED

Gaudenzio Meneghesso, Nicola Wrachien, D. Bari, 2010, Microelectron. Reliab..

Hot-Electron Effects in GaN GITs and HD-GITs: A Comprehensive Analysis

Gaudenzio Meneghesso, Eric E. Fabris, Enrico Zanoni, 2019, 2019 IEEE International Reliability Physics Symposium (IRPS).

Failure modes and mechanisms of InP-based and metamorphic high electron mobility transistors

Gaudenzio Meneghesso, Enrico Zanoni, G. Meneghesso, 2002, Microelectron. Reliab..

Variations in junction capacitance and doping activation associated with electrical stress of InGaN/GaN laser diodes

Gaudenzio Meneghesso, Enrico Zanoni, Stefania Marconi, 2013, Microelectron. Reliab..

Pulsed measurements and circuit modeling of a new breakdown mechanism of MESFETs and HEMTs

Gaudenzio Meneghesso, Enrico Zanoni, D. Buttari, 2000, 2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059).

Characterization of self-heating effects in semiconductor resistors during transmission line pulses

Wolfgang Fichtner, Gaudenzio Meneghesso, Chiara Corvasce, 2004, Microelectron. Reliab..

Claudio Lanzieri, Gaudenzio Meneghesso, Enrico Zanoni, 2012, Microelectron. Reliab..

ESD on GaN-based LEDs: An analysis based on dynamic electroluminescence measurements and current waveforms

Gaudenzio Meneghesso, Enrico Zanoni, Nicola Trivellin, 2014, Microelectron. Reliab..

Influence of different carbon doping on the performance and reliability of InAlN/GaN HEMTs

Gaudenzio Meneghesso, Enrico Zanoni, Christian Dua, 2014, Microelectron. Reliab..

A novel fast and versatile temperature measurement system for LDMOS transistors

Gaudenzio Meneghesso, Enrico Zanoni, Augusto Tazzoli, 2005, Microelectron. Reliab..

HBM and TLP ESD robustness in smart-power protection structures

Gaudenzio Meneghesso, Enrico Zanoni, S. Santirosia, 1999 .

Hot carrier aging degradation phenomena in GaN based MESFETs

Gaudenzio Meneghesso, Enrico Zanoni, Fabiana Rampazzo, 2004, Microelectronics and reliability.

White-light sources based on GaN laser diodes: analysis and application study

Gaudenzio Meneghesso, Enrico Zanoni, Nicola Trivellin, 2018, OPTO.

Long-term degradation mechanisms of mid-power LEDs for lighting applications

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2015, Microelectron. Reliab..

Thermal and electrical investigation of the reverse bias degradation of silicon solar cells

Gaudenzio Meneghesso, Enrico Zanoni, Massimo Vanzi, 2013, Microelectron. Reliab..

Indirect techniques for channel temperature estimation of HEMT microwave transistors: Comparison and limits

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2012, Microelectron. Reliab..

Reliability analysis of GaN-Based LEDs for solid state illumination

Gaudenzio Meneghesso, Enrico Zanoni, Anna Cavallini, 2003 .

Adaptive multi-wavelength LED star simulator for space life studies

Enrico Giro, Gaudenzio Meneghesso, Luca Poletto, 2016, SPIE OPTO.

Extensive analysis of the degradation of phosphor-converted LEDs

Gaudenzio Meneghesso, Enrico Zanoni, Nicola Trivellin, 2009, Optical Engineering + Applications.

Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2016, Microelectron. Reliab..

Failure signatures on 0.25 μm GaN HEMTs for high-power RF applications

Gaudenzio Meneghesso, Hervé Blanck, Benoit Lambert, 2014, Microelectron. Reliab..

Reliability and failure analysis of RF-MEMS switches for space applications

Gaudenzio Meneghesso, E. Autizi, E. Autizi, 2011 .

Reliability of capacitive RF MEMS switches subjected to repetitive impact cycles at different temperatures

Giorgio De Pasquale, Aurelio Somà, Gaudenzio Meneghesso, 2014, 2014 44th European Solid State Device Research Conference (ESSDERC).

Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2015, Microelectron. Reliab..

Positive and negative threshold voltage instabilities in GaN-based transistors

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2018, Microelectron. Reliab..

Degradation physics of GaN-based lateral and vertical devices

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2019, OPTO.

Reliability analysis of InGaN Blu-Ray laser diode

Gaudenzio Meneghesso, Masaaki Yuri, Enrico Zanoni, 2009, Microelectron. Reliab..

Degradation of GaN-on-GaN vertical diodes submitted to high current stress

Huili Grace Xing, Xiang Gao, Gaudenzio Meneghesso, 2018, Microelectron. Reliab..

Degradation mechanisms of InAs quantum dot 1.3μm laser diodes epitaxially grown on silicon

Gaudenzio Meneghesso, John E. Bowers, Enrico Zanoni, 2019, OPTO.

Breakdown investigation in GaN-based MIS-HEMT devices

Fabio Alessio Marino, Gaudenzio Meneghesso, Denis Marcon, 2014, 2014 44th European Solid State Device Research Conference (ESSDERC).

Active recovering mechanism for high performance RF MEMS redundancy switches

Gaudenzio Meneghesso, Paola Farinelli, Augusto Tazzoli, 2010, The 40th European Microwave Conference.

温度と電流駆動拡散過程によるInGaNレーザダイオードの劣化【Powered by NICT】

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2016 .

ESD sensitivity of a GaAs MMIC microwave power amplifier

Gaudenzio Meneghesso, Enrico Zanoni, Augusto Tazzoli, 2011, Microelectron. Reliab..

Long-term stresses on linear micromirrors for pico projector application

Gaudenzio Meneghesso, Marco Barbato, S. Costantini, 2017, Microelectron. Reliab..

Gate Stability and Robustness of In-Situ Oxide GaN Interlayer Based Vertical Trench MOSFETs (OG-FETs)

Gaudenzio Meneghesso, Enrico Zanoni, Umesh K. Mishra, 2019, 2019 IEEE International Reliability Physics Symposium (IRPS).

Investigation of the time-dependent failure of InGaN-based LEDs submitted to reverse-bias stress

Gaudenzio Meneghesso, Enrico Zanoni, Massimo Vanzi, 2017, OPTO.

Editorial

Gaudenzio Meneghesso, Francesco Iannuzzo, Mauro Ciappa, 2012, Microelectron. Reliab..

Degradation of vertical GaN-on-GaN fin transistors: Step-stress and constant voltage experiments

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2018, Microelectron. Reliab..

Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure

Dionyz Pogany, Frank Brunner, Gaudenzio Meneghesso, 2016, Microelectron. Reliab..

Aging behavior, reliability, and failure physics of GaN-based optoelectronic components

Gaudenzio Meneghesso, Enrico Zanoni, Nicola Trivellin, 2016, SPIE OPTO.

Reliability study of dye-sensitized solar cells by means of solar simulator and white LED

Gaudenzio Meneghesso, Andrea Reale, Aldo Di Carlo, 2012, Microelectron. Reliab..

Impact of field-plate geometry on the reliability of GaN-on-SiC HEMTs

Claudio Lanzieri, Gaudenzio Meneghesso, Enrico Zanoni, 2013, Microelectron. Reliab..

ESD robustness of smart-power protection structures evaluated by means of HBM and TLP tests

Gaudenzio Meneghesso, Enrico Zanoni, Claudio Contiero, 2000, 2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059).

Guest Editorial Special Issue on GaN Electronic Devices

Giovanni Ghione, Gaudenzio Meneghesso, Ruediger Quay, 2013 .

On the origin of the leakage current in p-gate AlGaN/GaN HEMTs

Gaudenzio Meneghesso, Enrico Zanoni, Peter Moens, 2018, 2018 IEEE International Reliability Physics Symposium (IRPS).

Alternative ESD Protection Structure in CMOS Technology for the Manufacture of High-Density Integration Circuits

Fabio Alessio Marino, Gaudenzio Meneghesso, 2007 .

Effects of ESD protections on latch-up sensitivity of CMOS 4-stripe structures

Gaudenzio Meneghesso, Paolo Pavan, Enrico Zanoni, 1997 .

Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress

Gaudenzio Meneghesso, Enrico Zanoni, Fausto Fantini, 2010, Microelectron. Reliab..

Impact of the substrate and buffer design on the performance of GaN on Si power HEMTs

Gaudenzio Meneghesso, Enrico Zanoni, X. Li, 2018, Microelectron. Reliab..

Traps localization and analysis in GaN HEMTs

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2014, Microelectron. Reliab..

Electron Trapping in GaN-on-Si Power HEMTs

Gaudenzio Meneghesso, Michael J. Uren, Peter Moens, 2015, ICNS 2015.

Failures of LEDs in Real-World Applications: A Review

Gaudenzio Meneghesso, Enrico Zanoni, Nicola Trivellin, 2018, IEEE Transactions on Device and Materials Reliability.

Experimental observation of TDDB-like behavior in reverse-biased green InGaN LEDs

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2016, Microelectron. Reliab..

Degradation of vertical GaN FETs under gate and drain stress

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2018, 2018 IEEE International Reliability Physics Symposium (IRPS).

ESD in Smart Power Processes

Gaudenzio Meneghesso, Antonio Andreini, Luca Sponton, 2003 .

The 2018 GaN power electronics roadmap

Alex Q. Huang, Yuhao Zhang, Xu Li, 2018, Journal of Physics D: Applied Physics.

J. Yang, Gaudenzio Meneghesso, Enrico Zanoni, 2010, Microelectron. Reliab..

Thermal stability analysis of high brightness LED during high temperature and electrical aging

Massimo Vanzi, Gaudenzio Meneghesso, Simone Buso, 2007, SPIE Optical Engineering + Applications.

Characterization and analysis of trap-related effects in AlGaN-GaN HEMTs

Gaudenzio Meneghesso, Nathalie Labat, André Touboul, 2007, Microelectron. Reliab..

Reliability of visible GaN LEDs in plastic package

Gaetano Scamarcio, Gaudenzio Meneghesso, Enrico Zanoni, 2003, Microelectron. Reliab..

Development ofESDprotection structures for BULK andSOTBCD6technology

Gaudenzio Meneghesso, Enrico Zanoni, Augusto Tazzoli, 2006 .

Reliability oriented design of LED-based light sources

Gaudenzio Meneghesso, Enrico Zanoni, Nicola Trivellin, 2013 .

Long-term degradation of InGaN-based laser diodes: Role of defects

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2017, Microelectron. Reliab..

Study of the actuation speed, bounces occurrences, and contact reliability of ohmic RF-MEMS switches

Gaudenzio Meneghesso, Augusto Tazzoli, Marco Barbato, 2010, Microelectron. Reliab..

Experimental investigation on the exploitation of an active mechanism to restore the operability of malfunctioning RF-MEMS switches

Gaudenzio Meneghesso, Jacopo Iannacci, M. Niessner, 2010 .

Bulk and surface effects of hydrogen treatment on Al/Ti-gate AlGaAs-GaAs power HFETs

Roberto Menozzi, Claudio Lanzieri, Gaudenzio Meneghesso, 1999, 1999 IEEE International Reliability Physics Symposium Proceedings. 37th Annual (Cat. No.99CH36296).

An active heat-based restoring mechanism for improving the reliability of RF-MEMS switches

Gaudenzio Meneghesso, Jacopo Iannacci, Augusto Tazzoli, 2011, Microelectron. Reliab..

Modeling and characterization of a circular-shaped energy scavenger in MEMS surface micromachining technology

Gaudenzio Meneghesso, Jacopo Iannacci, A. Faes, 2011, Microtechnologies.

Double Control Gate Field-Effect Transistor for Area Efficient and Cost Effective Applications

Fabio Alessio Marino, Gaudenzio Meneghesso, Enrico Zanoni, 2014, IEEE Electron Device Letters.

Statistics and localisation of vertical breakdown in AlGaN/GaN HEMTs on SiC and Si substrates for power applications

Sergey Bychikhin, Dionyz Pogany, Gaudenzio Meneghesso, 2013, Microelectron. Reliab..

Reverse-bias stress of high electron mobility transistors: Correlation between leakage current, current collapse and trap characteristics

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2013, Microelectron. Reliab..

Turn-on speed of grounded gate NMOS ESD protection transistors

Gaudenzio Meneghesso, Fred G. Kuper, J.R.M. Luchies, 1996 .

RF-MEMS Switches Reliability for Long Term Spatial Applications

Gaudenzio Meneghesso, Augusto Tazzoli, V. Peretti, 2007 .

Optimization of ESD protection structures suitable for BCD6 smart power technology

Gaudenzio Meneghesso, Enrico Zanoni, Luca Sponton, 2003, Microelectron. Reliab..

Holding voltage investigation of advanced SCR-based protection structures for CMOS technology

Fabio Alessio Marino, Gaudenzio Meneghesso, Enrico Zanoni, 2007, Microelectron. Reliab..

Reliability improvement in microstructures by reducing the impact velocity through electrostatic force modulation

Giorgio De Pasquale, Aurelio Somà, Gaudenzio Meneghesso, 2012, Microelectron. Reliab..

Enhancement of RF-MEMS switch reliability through an active anti-stiction heat-based mechanism

Gaudenzio Meneghesso, Jacopo Iannacci, Gian-Franco Dalla Betta, 2010, Microelectron. Reliab..

Chip and package-related degradation of high power white LEDs

Gaudenzio Meneghesso, Enrico Zanoni, Massimo Vanzi, 2012, Microelectron. Reliab..

Special Issue on Reliability

Elyse Rosenbaum, Gaudenzio Meneghesso, Ben Kaczer, 2019 .

NanoElectronics roadmap for Europe: From nanodevices and innovative materials to system integration

Adrian M. Ionescu, Danilo Demarchi, Gaudenzio Meneghesso, 2019, Solid-State Electronics.

"Hot-plugging" of LED modules: Electrical characterization and device degradation

Gaudenzio Meneghesso, Enrico Zanoni, Massimo Vanzi, 2013, Microelectron. Reliab..

Ageing of InGaN-based LEDs: Effects on internal quantum efficiency and role of defects

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2015, Microelectron. Reliab..

On the Key Role of the Brokaw Cell on Bandgap Immunity to EMI

Andrea Neviani, Gaudenzio Meneghesso, Simone Buso, 2006 .

Smart Power Devices Nanotechnology

Gaudenzio Meneghesso, Peter Moens, Mikael Östling, 2017 .

Long Term Stability of InGaAs/AlInAs/GaAs Methamorphic HEMTs

Gaudenzio Meneghesso, Enrico Zanoni, Gaudenzio Chini, 2001, Microelectron. Reliab..

Failure limits and electro-optical characteristics of GaN-based LEDs under electrical overstress

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2018, Microelectron. Reliab..

Thermal, optical, and electrical engineering of an innovative tunable white LED light engine

Gaudenzio Meneghesso, Enrico Zanoni, Nicola Trivellin, 2014, Photonics West - Optoelectronic Materials and Devices.

Single- and double-heterostructure GaN-HEMTs devices for power switching applications

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2012, Microelectronics and reliability.

Reliability evaluation for Blu-Ray laser diodes

Gaudenzio Meneghesso, Masaaki Yuri, Enrico Zanoni, 2010, Microelectron. Reliab..

Thermal stress effects on Dye-Sensitized Solar Cells (DSSCs)

Gaudenzio Meneghesso, Andrea Reale, Aldo Di Carlo, 2011, Microelectron. Reliab..

Reliability issues in GaN-based light-emitting diodes: Effect of dc and PWM stress

Gaudenzio Meneghesso, Enrico Zanoni, Nicola Trivellin, 2012, Microelectron. Reliab..

Review of Approaches and Solutions for Effective ESD Protection Devices and Schemes in Smart Power ICs

Gaudenzio Meneghesso, Antonio Andreini, Lorenzo Cerati, 2006 .

ESD protection structures for BCD5 smart power technologies

Gaudenzio Meneghesso, Enrico Zanoni, Luca Sponton, 2001, Microelectron. Reliab..

Recent results on the physical origin of the degradation of GaN-based LEDs and lasers

Gaudenzio Meneghesso, Enrico Zanoni, Daisuke Ueda, 2011, OPTO.

Proton induced trapping effect on space compatible GaN HEMTs

Gaudenzio Meneghesso, Hervé Blanck, Benoit Lambert, 2014, Microelectron. Reliab..

Degradation of InGaN-based MQW solar cells under 405 nm laser excitation

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2017, Microelectron. Reliab..

Effects of constant voltage stress on organic complementary logic inverters

Gaudenzio Meneghesso, Michele Muccini, Andrea Stefani, 2014, 2014 44th European Solid State Device Research Conference (ESSDERC).

Impact of Sidewall Etching on the Dynamic Performance of GaN-on-Si E-Mode Transistors

Gaudenzio Meneghesso, A. Nardo, Enrico Zanoni, 2019, IRPS.

Investigation methods and approaches for alleviating charge trapping phenomena in ohmic RF-MEMS switches submitted to cycling test

Gaudenzio Meneghesso, Marco Barbato, B. Margesin, 2011, Microelectron. Reliab..

Effects of constant voltage stress on p- and n-type organic thin film transistors with poly(methyl methacrylate) gate dielectric

Gaudenzio Meneghesso, Michele Muccini, Raffaella Capelli, 2013, Microelectron. Reliab..

Vertical stack reliability of GaN-on-Si buffers for low-voltage applications

Gaudenzio Meneghesso, Niels Posthuma, Enrico Zanoni, 2021, 2021 IEEE International Reliability Physics Symposium (IRPS).

A Generalized Approach to Determine the Switching Reliability of GaN HEMTs on-Wafer Level

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2021, 2021 IEEE International Reliability Physics Symposium (IRPS).

Dynamic Performance Characterization Techniques in Gallium Nitride-Based Electronic Devices

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2021, Crystals.

CdTe solar cells: technology, operation and reliability

Gaudenzio Meneghesso, Enrico Zanoni, Giovanna Mura, 2021 .

Study on the difference between ID(VG) and C(VG) pBTI shifts in GaN-on-Si E-mode MOSc-HEMT

J. Cluzel, Gaudenzio Meneghesso, Romain Gwoziecki, 2021, 2021 IEEE International Reliability Physics Symposium (IRPS).

UV-Based Technologies for SARS-CoV2 Inactivation: Status and Perspectives

Gaudenzio Meneghesso, Enrico Zanoni, Fabrizio Dughiero, 2021, Electronics.

Role of the AlGaN Cap Layer on the Trapping Behaviour of N-Polar GaN MISHEMTs

Gaudenzio Meneghesso, Enrico Zanoni, Umesh K. Mishra, 2021, 2021 IEEE International Reliability Physics Symposium (IRPS).

Electrical and Electroluminescence Characteristics of AlGaN/GaN High Electron Mobility Transistors Operated in Sustainable Breakdown Conditions

Dionyz Pogany, Gaudenzio Meneghesso, Enrico Zanoni, 2013 .

Trapping and Reliability Assessment in D-Mode GaN-Based MIS-HEMTs for Power Applications

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2014, IEEE transactions on power electronics.

Impact ionization in compound semiconductor devices

Gaudenzio Meneghesso, Enrico Zanoni, G. Meneghesso, 2001 .

Pulsed measurements and circuit modeling of weak and strong avalanche effects in GaAs MESFETs and HEMTs

Gaudenzio Meneghesso, Enrico Zanoni, Alessandro Chini, 2003 .

Recombination mechanisms and thermal droop in AlGaN-based UV-B LEDs

Gaudenzio Meneghesso, Enrico Zanoni, Sven Einfeldt, 2017 .

A study of the failure of GaN-based LEDs submitted to reverse-bias stress and ESD events

Gaudenzio Meneghesso, Enrico Zanoni, Augusto Tazzoli, 2010, 2010 IEEE International Reliability Physics Symposium.

Reliability Issue in Compound Semiconductor Heterojunction Devices

Roberto Menozzi, Mattia Borgarino, Gaudenzio Meneghesso, 1999 .

Electroluminescence analysis of time-dependent reverse-bias degradation of HEMTs: A complete model

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2011, 2011 International Electron Devices Meeting.

Leakage current and reverse-bias luminescence in InGaN-based light-emitting diodes

Gaudenzio Meneghesso, Enrico Zanoni, Nicola Trivellin, 2009 .

Correlation between kink and cathodoluminescence spectra in AlGaN/GaN high electron mobility transistors

Gaudenzio Meneghesso, Enrico Zanoni, Francesca Rossi, 2010 .

Breakdown mechanisms in AlGaN/GaN HEMTs: An overview

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2014 .

Electron and hole-related luminescence processes in gate injection transistors

Gaudenzio Meneghesso, Enrico Zanoni, Daisuke Ueda, 2010 .

Reliability issues of Gallium Nitride High Electron Mobility Transistors

Gaudenzio Meneghesso, Enrico Zanoni, Augusto Tazzoli, 2010, International Journal of Microwave and Wireless Technologies.

Temperature-Dependent Dynamic $R_{\mathrm {\mathrm{{\scriptstyle ON}}}}$ in GaN-Based MIS-HEMTs: Role of Surface Traps and Buffer Leakage

Gaudenzio Meneghesso, Enrico Zanoni, Peter Moens, 2015, IEEE Transactions on Electron Devices.

Evidence of Hot-Electron Degradation in GaN-Based MIS-HEMTs Submitted to High Temperature Constant Source Current Stress

Gaudenzio Meneghesso, Enrico Zanoni, Marleen Van Hove, 2016, IEEE Electron Device Letters.

Laser-Based Lighting: Experimental Analysis and Perspectives

Gaudenzio Meneghesso, Enrico Zanoni, Nicola Trivellin, 2017, Materials.

Characterization of Localized degradation in reverse-biased GaN HEMTs by scanning Transmission Electron Microscopy and Electron Holography

Gaudenzio Meneghesso, Enrico Zanoni, Antonio Stocco, 2010 .

Role of defects in the thermal droop of InGaN-based light emitting diodes

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2016 .

On the Pulsed and Transient Characterization of Organic Field-Effect Transistors

Gaudenzio Meneghesso, Stefano Toffanin, Michele Muccini, 2015, IEEE Electron Device Letters.

On the impact of Carbon-doping and channel thickness on the dynamic Ron of 650V GaN power devices

Gaudenzio Meneghesso, Enrico Zanoni, Peter Moens, 2015 .

Reliability and parasitic issues in GaN-based power HEMTs: a review

Gaudenzio Meneghesso, Enrico Zanoni, Stefaan Decoutere, 2016 .

Degradation of AlGaN/GaN HEMTs below the “critical voltage”: a time-dependent analysis

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2012 .

Power GaN Devices

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2017 .

Physical mechanisms limiting the performance and the reliability of GaN-based LEDs

Gaudenzio Meneghesso, Enrico Zanoni, Giovanni Verzellesi, 2018 .

Channel temperature measurement of PHEMT by means of optical probes

A. Di Carlo, Gaudenzio Meneghesso, Enrico Zanoni, 2003 .

Radiation performance of new semiconductor power devices for the LHC experiment upgrades

Nicola Delmonte, Gaudenzio Meneghesso, Enrico Zanoni, 2015 .

Impact of Substrate Resistivity on the Vertical Leakage, Breakdown, and Trapping in GaN-on-Si E-Mode HEMTs

Gaudenzio Meneghesso, Niels Posthuma, Enrico Zanoni, 2018, IEEE Transactions on Electron Devices.

GaAlN/GaN HEMT heterostructures grown on SiCopSiC composite substrates for HEMT application

Gaudenzio Meneghesso, C. Gaquiere, Sylvain Delage, 2008 .

Physical Origin of the Optical Degradation of InAs Quantum Dot Lasers

Gaudenzio Meneghesso, John E. Bowers, Enrico Zanoni, 2019, IEEE Journal of Quantum Electronics.

Developments on DC/DC converters for the LHC experiment upgrades

Nicola Delmonte, Alessandro Paccagnella, Gaudenzio Meneghesso, 2014 .

Investigation of the deep level involved in InGaN laser degradation by deep level transient spectroscopy

Gaudenzio Meneghesso, Enrico Zanoni, Daisuke Ueda, 2011 .

Failure mechanisms of Schottky gate contact degradation and deep traps creation in AlGaAs/InGaAs PM-HEMTs submitted to accelerated life tests

Alessandro Paccagnella, Gaudenzio Meneghesso, Enrico Zanoni, 1998 .

30-nm two-step recess gate InP-Based InAlAs/InGaAs HEMTs

Tetsuya Suemitsu, Gaudenzio Meneghesso, Enrico Zanoni, 2002 .

Trapping in GaN-based metal-insulator-semiconductor transistors: Role of high drain bias and hot electrons

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2014 .

Study of threshold voltage instability in E‐mode GaN MOS‐HEMTs

Gaudenzio Meneghesso, Antonino Parisi, Alessandro Chini, 2016 .

A positive exploitation of ESD events: Micro-welding induction on ohmic MEMS contacts

Gaudenzio Meneghesso, Jacopo Iannacci, Augusto Tazzoli, 2011, EOS/ESD Symposium Proceedings.

Thermal degradation of InGaN/GaN LEDs ohmic contacts

Gaudenzio Meneghesso, E. Zanoni, Matteo Meneghini, 2007 .

A model for the thermal degradation of metal/(p-GaN) interface in GaN-based light emitting diodes

Gaudenzio Meneghesso, Enrico Zanoni, Anna Cavallini, 2008 .

Influence of short-term low current dc aging on the electrical and optical properties of InGaN blue light-emitting diodes

Gaudenzio Meneghesso, Enrico Zanoni, Anna Cavallini, 2006 .

Degradation of AlGaN/GaN high electron mobility transistors related to hot electrons

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2012 .

Hot carrier effects in AlGaAs/InGaAs high electron mobility transistors: Failure mechanisms induced by hot carrier testing

Gaudenzio Meneghesso, Enrico Zanoni, M. Pavesi, 1997 .

Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues

Giovanni Ghione, Gaudenzio Meneghesso, Enrico Bellotti, 2014 .

Influence of gate-leakage current on drain current collapse of unpassivated GaN∕AlGaN∕GaN high electron mobility transistors

Gaudenzio Meneghesso, Peter Kordos, Fabiana Rampazzo, 2005 .

Reliability of power devices: Bias-induced threshold voltage instability and dielectric breakdown in GaN MIS-HEMTs

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2016, 2016 IEEE International Integrated Reliability Workshop (IIRW).

Systematic characterization of Cl 2 reactive ion etching for gate recessing in AlGaN/GaN HEMTs

Gaudenzio Meneghesso, Enrico Zanoni, Umesh K. Mishra, 2002 .

Extensive analysis of the luminescence properties of AlGaN/GaN high electron mobility transistors

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2010 .

A Combined Mechanical and Electrical Characterization Procedure for Investigating the Dynamic Behavior of RF-MEMS Switches

Gaudenzio Meneghesso, Marco Barbato, Andrea Cester, 2014, IEEE Transactions on Device and Materials Reliability.

Quality and reliability of in-situ Al2O3 MOS capacitors for GaN-based power devices

Gaudenzio Meneghesso, Enrico Zanoni, Umesh K. Mishra, 2016, 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

AlGaN/GaN-Based HEMTs Failure Physics and Reliability: Mechanisms Affecting Gate Edge and Schottky Junction

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2013, IEEE Transactions on Electron Devices.

Giovanni Ghione, Gaudenzio Meneghesso, Enrico Zanoni, 2015 .

Trapping mechanisms in GaN‐based MIS‐HEMTs grown on silicon substrate

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2015 .

A review on the reliability of GaN-based laser diodes

Gaudenzio Meneghesso, Masaaki Yuri, Enrico Zanoni, 2010, IRPS 2010.

(Invited) Electric-Field and Thermally-Activated Failure Mechanisms of AlGaN/GaN High Electron Mobility Transistors

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2011 .

On-state and off-state breakdown in GaInAs/InP composite-channel HEMT's with variable GaInAs channel thickness

Andrea Neviani, Gaudenzio Meneghesso, Enrico Zanoni, 1999 .

Degradation Mechanisms of GaN‐Based Vertical Devices: A Review

Huili Grace Xing, Gaudenzio Meneghesso, Enrico Zanoni, 2020, physica status solidi (a).

Monte Carlo simulation of impact ionization and light emission in pseudomorphic HEMTs

Gaudenzio Meneghesso, Paolo Lugli, A. Bonfiglio, 1999 .

Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2012 .

Parasitic Effects in GaN HEMTs and Related Characterization Methods

Gaudenzio Meneghesso, Enrico Zanoni, Augusto Tazzoli, 2009 .

Breakdown behavior of low-power pseudomorphic AlGaAs/InGaAs 2-D MESFET's

Michael S. Shur, Gaudenzio Meneghesso, Enrico Zanoni, 1998 .

Degradation Mechanisms of Heterogeneous III-V/Silicon 1.55- $\mu \text{m}$ DBR Laser Diodes

Gaudenzio Meneghesso, John E. Bowers, Enrico Zanoni, 2017, IEEE Journal of Quantum Electronics.

Failure Modes and Mechanisms of DC-Aged GaN LEDs

Gaudenzio Meneghesso, Enrico Zanoni, Massimo Vanzi, 2002 .

Correlation between dynamic Rdsou transients and Carbon related buffer traps in AlGaN/GaN HEMTs

Gaudenzio Meneghesso, Giovanni Verzellesi, Fausto Fantini, 2016, 2016 IEEE International Reliability Physics Symposium (IRPS).

GaN-Based Laser Wireless Power Transfer System

Gaudenzio Meneghesso, Enrico Zanoni, Malek Zegaoui, 2018, Materials.

Gaudenzio Meneghesso, Enrico Zanoni, Sven Einfeldt, 2017, IEEE Transactions on Electron Devices.

Low-frequency noise sources in as-prepared and aged GaN-based light-emitting diodes

Sergey Bychikhin, Dionyz Pogany, Gaudenzio Meneghesso, 2005 .

Evidence of optically induced degradation in gallium nitride optoelectronic devices

Gaudenzio Meneghesso, Enrico Zanoni, Malek Zegaoui, 2018, Applied Physics Express.

GaN-Based Power HEMTs: Parasitic, Reliability and High Field Issues

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2013 .

GaN HEMT Reliability: From Time Dependent Gate Degradation to On-state Failure Mechanisms

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2012 .

Random telegraph signal noise in gate current of unstressed and reverse-bias-stressed AlGaN/GaN high electron mobility transistors

Dionyz Pogany, Gottfried Strasser, Gaudenzio Meneghesso, 2012 .

Physics‐based modeling and experimental implications of trap‐assisted tunneling in InGaN/GaN light‐emitting diodes

Giovanni Ghione, Gaudenzio Meneghesso, Enrico Zanoni, 2015 .

Analysis of the degradation of AlGaN-based deep-ultraviolet LEDs

Gaudenzio Meneghesso, Enrico Zanoni, Massimo Vanzi, 2009 .

Failure mechanisms of AlGaAs/InGaAs pseudomorphic hemt's: Effects due to hot electrons and modulation of trapped charge

Gaudenzio Meneghesso, Enrico Zanoni, G. Meneghesso, 1997 .

Reliability Analysis of Permanent Degradations on AlGaN/GaN HEMTs

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2013, IEEE Transactions on Electron Devices.

Degradation of InGaN-based laser diodes analyzed by means of electrical and optical measurements

Gaudenzio Meneghesso, Enrico Zanoni, Daisuke Ueda, 2010 .

Soft and Hard Failures of InGaN-Based LEDs Submitted to Electrostatic Discharge Testing

Gaudenzio Meneghesso, Enrico Zanoni, Augusto Tazzoli, 2010, IEEE Electron Device Letters.

Role of buffer doping and pre-existing trap states in the current collapse and degradation of AlGaN/GaN HEMTs

Claudio Lanzieri, Gaudenzio Meneghesso, Enrico Zanoni, 2014, 2014 IEEE International Reliability Physics Symposium.

Degradation of AlGaN/GaN Schottky diodes on silicon: Role of defects at the AlGaN/GaN interface

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2013 .

Analysis of the role of current in the degradation of InGaN-based laser diodes

Gaudenzio Meneghesso, Masaaki Yuri, Enrico Zanoni, 2009 .

On-Wafer Single-Pulse Thermal Load–Pull RF Characterization of Trapping Phenomena in AlGaN/GaN HEMTs

Gaudenzio Meneghesso, Enrico Zanoni, Sylvain Laurent, 2016, IEEE Transactions on Microwave Theory and Techniques.

Numerical investigation of the lateral and vertical leakage currents and breakdown regimes in GaN-on-Silicon vertical structures

Gaudenzio Meneghesso, Antonio Gnudi, Peter Moens, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

On trapping mechanisms at oxide-traps in Al2O3/GaN metal-oxide-semiconductor capacitors

Gaudenzio Meneghesso, Enrico Zanoni, Umesh K. Mishra, 2016 .

Optical evidence of an electrothermal degradation of InGaN-based light-emitting diodes during electrical stress

Gaudenzio Meneghesso, Enrico Zanoni, Francesca Rossi, 2004 .

Characterization of the deep levels responsible for non-radiative recombination in InGaN/GaN light-emitting diodes

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2014 .

Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements

Gaudenzio Meneghesso, Enrico Zanoni, Alessandro Chini, 2009 .

Time-Dependent Failure of GaN-on-Si Power HEMTs With p-GaN Gate

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2016, IEEE Transactions on Electron Devices.

Semiclassical simulation of trap-assisted tunneling in GaN-based light-emitting diodes

Giovanni Ghione, Gaudenzio Meneghesso, Enrico Zanoni, 2015 .

Electroluminescence Analysis and Simulation of the Effects of Injection and Temperature on Carrier Distribution in InGaN-Based Light-Emitting Diodes with Color-Coded Quantum Wells

Giovanni Ghione, Gaudenzio Meneghesso, Enrico Bellotti, 2013 .

Channel thickness dependence of breakdown dynamic in InP-based lattice-matched HEMTs

A. Di Carlo, Gaudenzio Meneghesso, Paolo Lugli, 2003 .

Gate frequency sweep: An effective method to evaluate the dynamic performance of AlGaN/GaN power heterojunction field effect transistors

Gaudenzio Meneghesso, Enrico Zanoni, Hidetoshi Ishida, 2014 .

Failure of High Power LEDs Submitted to EOS: Dependence on Device Layout and Pulse Properties

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2017, IEEE Transactions on Device and Materials Reliability.

Angular and Strain Dependence of Heavy-Ions Induced Degradation in SOI FinFETs

Alessandro Paccagnella, Cor Claeys, Eddy Simoen, 2009, IEEE Transactions on Nuclear Science.

Recoverable degradation of blue InGaN-based light emitting diodes submitted to 3 MeV proton irradiation

Gaudenzio Meneghesso, Enrico Zanoni, M. Bagatin, 2014 .

Evidence of interface trap creation by hot‐electrons in AlGaAs/GaAs high electron mobility transistors

Alessandro Paccagnella, Gaudenzio Meneghesso, Enrico Zanoni, 1996 .

Trapping phenomena in AlGaN/GaN HEMTs: a study based on pulsed and transient measurements

Gaudenzio Meneghesso, Enrico Zanoni, Umesh K. Mishra, 2013 .

RF degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements

Gaudenzio Meneghesso, Enrico Zanoni, Alessandro Chini, 2009, 2009 European Microwave Integrated Circuits Conference (EuMIC).

Nanoscale Investigation of Degradation and Wavelength Fluctuations in InGaN-Based Green Laser Diodes

Gaudenzio Meneghesso, Enrico Zanoni, Massimo Vanzi, 2016, IEEE Transactions on Nanotechnology.

Secondary Electroluminescence of GaN-on-Si RF HEMTs: Demonstration and Physical Origin

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2017, IEEE Transactions on Electron Devices.

2.1 A/mm current density AlGaN/GaN HEMT

Gaudenzio Meneghesso, Enrico Zanoni, Umesh K. Mishra, 2003 .

Deep Levels Characterization in GaN HEMTs—Part II: Experimental and Numerical Evaluation of Self-Heating Effects on the Extraction of Traps Activation Energy

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2013, IEEE Transactions on Electron Devices.

Gate Stability of GaN-Based HEMTs with P-Type Gate

Gaudenzio Meneghesso, Niels Posthuma, Denis Marcon, 2016 .

GaN-based MIS-HEMTs: Impact of cascode-mode high temperature source current stress on NBTI shift

Gaudenzio Meneghesso, Enrico Zanoni, Peter Moens, 2017, 2017 IEEE International Reliability Physics Symposium (IRPS).

Buffer Traps in Fe-Doped AlGaN/GaN HEMTs: Investigation of the Physical Properties Based on Pulsed and Transient Measurements

Claudio Lanzieri, Gaudenzio Meneghesso, Enrico Zanoni, 2014, IEEE Transactions on Electron Devices.

Preconditioning Procedure for the Better Estimation of the Long-Term Lifetime in Microelectromechanical Switches

Gaudenzio Meneghesso, Benno Margesin, Marco Barbato, 2016, IEEE Transactions on Electron Devices.

Thermal and electrical characterization of catastrophic degradation of silicon solar cells submitted to reverse current stress

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2013, 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC).

INTRODUCTORY INVITED PAPERFailure mechanisms due to metallurgical interactions in commercially available AlGaAs/GaAs and AlGaAs/InGaAs HEMTs

Gaudenzio Meneghesso, Enrico Zanoni, Massimo Vanzi, 1998 .