S. Ryu

发表

Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor

C. Hwang, S. Kim, Seongjae Cho, 2016 .

Area-selective chemical vapor deposition of Co for Cu capping layer

Han-Bo-Ram Lee, Hyungjun Kim, Jukka T. Tanskanen, 2016 .

Circular Double‐Patterning Lithography Using a Block Copolymer Template and Atomic Layer Deposition

W. Park, Han-Bo-Ram Lee, Se‐Hun Kwon, 2018 .

Dopant selection rules for extrinsic tunability of HfOx RRAM characteristics: A systematic study

Y. Nishi, Liang Zhao, B. Magyari-Kope, 2013, 2013 Symposium on VLSI Technology.

Atomic layer deposition of 1D and 2D nickel nanostructures on graphite

Hyungjun Kim, H. Moon, Bonggeun Shong, 2017, Nanotechnology.

Atomic Layer Deposition Beyond Thin Film Deposition Technology

Sumaira Yasmeen, S. Ryu, Han‐Bo‐Ram Lee, 2022, Advanced Materials Technologies.

Improved endurance of resistive switching TiO2 thin film by hourglass shaped Magnéli filaments

Jong-Ho Lee, Seung Wook Ryu, Cheol Seong Hwang, 2011 .

Dependency of electrical performances and reliability of 28 nm logic transistor on gate oxide interface treatment methods

Md. Hasan Raza Ansari, Eunjung Ko, Seongjae Cho, 2020, Applied Physics Express.

Reaction Mechanism and Film Properties of the Atomic Layer Deposition of ZrO2 Thin Films with a Heteroleptic CpZr(N(CH3)2)3 Precursor

I. Oh, Seiyon Kim, Seunggi Seo, 2023, Applied Surface Science.

Effects of ZrO2 doping on HfO2 resistive switching memory characteristics

Y. Nishi, Joonsuk Park, Seongjae Cho, 2014 .

Concurrent presence of unipolar and bipolar resistive switching phenomena in pnictogen oxide Sb2O5 films

Jong-Ho Lee, Seung Wook Ryu, Cheol Seong Hwang, 2012 .

Unipolar resistive switching characteristics of pnictogen oxide films: Case study of Sb2O5

C. Hwang, Jong-Ho Lee, Jaeyeong Heo, 2012 .

Ti-electrode effects of NiO based resistive switching memory with Ni insertion layer

Yoshio Nishi, Seung Wook Ryu, Young Bae Ahn, 2012 .

Pulsed CVD-W Nucleation Layer Using WF6 and B2H6 for Low Resistivity W

H. Kim, Sungmin Kim, S. Ryu, 2009 .

Influence of Substrates on the Nucleation and Growth Behaviors of Ge2Sb2Te5 Films by Combined Plasma-Enhanced Atomic Layer and Chemical Vapor Deposition

Seung Wook Ryu, Cheol Seong Hwang, Byung Joon Choi, 2009 .

Interlayer-assisted atomic layer deposition of MgO as a magnetic tunneling junction insulators

Hyun Gu Kim, Hyungjun Kim, S. Ryu, 2018 .

Threshold switching in Si-As-Te thin film for the selector device of crossbar resistive memory

Jong-Ho Lee, Seung Wook Ryu, Young Bae Ahn, 2012 .

Effect of Ge Concentration on the On-Current Boosting of Logic P-Type MOSFET with Sigma-Shaped Source/Drain

Eunjung Ko, D. Ko, Seran Park, 2021, Coatings.

SiO2 Incorporation Effects in Ge2Sb2Te5 Films Prepared by Magnetron Sputtering for Phase Change Random Access Memory Devices

Byung Joon Choi, C. Hwang, S. Hong, 2006 .

Phase transformation behaviors of SiO2 doped Ge2Sb2Te5 films for application in phase change random access memory

Byung Joon Choi, C. Hwang, Jong-Ho Lee, 2008 .

Thermal Stability of SiO 2 Doped Ge 2 Sb 2 Te 5 for Application in Phase Change Random Access Memory

Jong Ho Lee, Seung Wook Ryu, Young Bae Ahn, 2011 .

SiO2 doped Ge2Sb2Te5 thin films with high thermal efficiency for applications in phase change random access memory

Se-Ho Lee, C. Hwang, H. Kim, 2011, Nanotechnology.

The reason for the increased threshold switching voltage of SiO2 doped Ge2Sb2Te5 thin films for phase change random access memory

Se-Ho Lee, C. Hwang, Jong-Ho Lee, 2009 .