M. Rastegaeva

发表

A decrease in ohmic losses and an increase in power in GaSb photovoltaic converters

A. A. Usikova, N. Timoshina, S. Sorokina, 2011 .

Ti/Ni ohmic contacts to n-type gallium nitride

A. I. Babanin, K. Vassilevski, I. Nikitina, 1997 .

The influence of temperature treatment on the formation of Ni-based Schottky diodes and ohmic contacts to n-6H-SiC

A. A. Petrov, A. I. Babanin, I. Nikitina, 1997 .

On the problem of internal optical loss and current leakage in laser heterostructures based on AlGaInAs/InP solid solutions

I. Tarasov, V. Shamakhov, N. Pikhtin, 2016 .

Spectral characteristics of multimode semiconductor lasers with a high-order surface diffraction grating

V. V. Zolotarev, I. Tarasov, N. Pikhtin, 2014 .

Thermal delocalization of carriers in semiconductor lasers (λ = 1010–1070 nm)

Z. N. Sokolova, I. Tarasov, D. Vinokurov, 2012 .

Temperature dependence of the threshold current of QW lasers

V. Smirnov, I. Tarasov, A. L. Stankevich, 2005 .

Investigation of 6H-SiC site competition epitaxy the silane-methane-hydrogen gas system

D. Davidov, A. Lebedev, V. Chelnokov, 1999 .

Surface barrier height in metal-n-6H-SiC structures

A. Lebedev, V. Chelnokov, M. Rastegaeva, 1995 .

Surface barrier height in metal-SiC structures of 6H, 4H and 3C polytypes

J. Bluet, T. Bretagnon, A. Lebedev, 1997 .

Metaln-6HSiC surface barrier heightExperimental data and description in the traditional terms

A. Lebedev, V. Chelnokov, M. Rastegaeva, 1995 .

Ohmic Contacts to Silicon Carbide Devices

M. Anikin, M. Rastegaeva, A. Syrkin, 1992 .

High-temperature Au-SiC-6H Schottky diodes

S. N. Pyatko, A. Lebedev, A. Strel'chuk, 1991 .

Power silicon carbide devices based on Lely grown substrates

N.S. Savkina, M.G. Rastegaeva, A.A. Lebedev, 1995, Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95.

Sensor composites consisting of a ceramic substrate and thin films of TbOx oxides and (TbOx)0.5(YO1.5)0.5 solid solutions

L. V. Morozova, P. A. Tikhonov, M. Kalinina, 2009 .

Closed mode structures in large rectangular closed resonators based on AlGaAs/GaAs heterostructures

N. Pikhtin, S. Slipchenko, D. Nikolaev, 2018, International Conference Laser Optics.

Multi-wavelength integrated optical-laser emission modulator based on semiconductor heterostructures

V. V. Zolotarev, P. Kop’ev, I. Tarasov, 2014 .

High-Power and Repetion Rate Nanosecond Pulse Generation in “Diode Laser—Thyristor” Stacks

N. Pikhtin, S. Slipchenko, V. Golovin, 2021, IEEE Photonics Technology Letters.

High-order diffraction gratings for high-power semiconductor lasers

V. V. Zolotarev, Z. N. Sokolova, I. Tarasov, 2012 .

Large area silicon carbide devices fabricated on SiC wafers with reduced micropipe density

M. Mynbaeva, N. Savkina, N. Kuznetsov, 1999 .

Electrical characteristics of tungsten-contacts to 6HSiC at temperatures between 300 and 950 K

M. Rastegaeva, A. Syrkin, 1992 .

Perspectives of Use of Diagnostic Mirrors with Transparent Protection Layer in Burning Plasma Experiments

V. N. Gorshkov, D. B. Nikitin, G. Kurskiev, 2008 .

Kelvin probe force and surface photovoltage microscopy observation of minority holes leaked from active region of working InGaAs∕AlGaAs∕GaAs laser diode

R. Laiho, K. Ladutenko, V. Evtikhiev, 2007 .

High-efficiency (49%) and high-power photovoltaic cells based on gallium antimonide

M. Shvarts, V. Andreev, S. Sorokina, 2006 .

Silicon Carbide Epitaxial Layers Grown ON SiC Wafers With Reduced Micropipe Density

N. Savkina, N. Kuznetsov, A. Morozov, 1998 .

Influence of proton irradiation on recombination current in 6H–SiC pn structures

A. Strel'chuk, N. Savkina, M. Rastegaeva, 1999 .

Laser-diode bars based on AlGaAsP/GaAs heterostructures emitting at a wavelength of 850 nm

I. Tarasov, D. Nikolaev, N. Pikhtin, 2014 .

850-nm diode lasers with different ways of compensating for internal mechanical stresses in an AlGaAs:P/GaAs heterostructure

Ilya S. Tarasov, D. A. Vinokurov, M. G. Rastegaeva, 2013 .

Fabrication of GaN mesa structures

K. Vassilevski, I. Nikitina, V. Dmitriev, 1996 .

Characterization Shottky barriers occurring at the metal-6H-SiC contact based on results of studies of current-voltage characteristics

A. Strel'chuk, M. Rastegaeva, 1997 .

Effect of boron diffusion on the high‐voltage behavior of 6H‐SiC p+nn+ structures

J. Chante, M. Locatelli, A. Lebedev, 1996 .