H. Kawanishi

发表

Experimental energy difference between heavy- or light-hole valence band and crystal-field split-off-hole valence band in AlxGa1−xN

H. Kawanishi, E. Niikura, Mao Yamamoto, 2006 .

Extremely weak surface emission from (0001) c-plane AlGaN multiple quantum well structure in deep-ultraviolet spectral region

H. Kawanishi, E. Niikura, Mao Yamamoto, 2006 .

Monolithic Integration of Laser and Amplifier/Detector by Twin-Guide Structure

Katsuyuki Utaka, Yasuharu Suematsu, K. Kishino, 1978 .

Room-Temperature Photoluminescence from BAlGaN-Based Double or Single Heterostructures for UV Laser Diode

T. Honda, T. Takano, H. Kawanishi, 2000 .

GaAs/AlGaAs distributed feedback‐transverse junction stripe laser using a hybrid liquid phase epitaxy/metal‐organic chemical vapor deposition growth technique

M. Hafich, H. Kawanishi, P. Petersen, 1981 .

Amorphous GaN-Based Electroluminescent Devices Operating in UV Spectral Region

T. Honda, H. Kawanishi, K. Konno, 2003 .

Deposition of Amorphous GaN by Compound Source Molecular Beam Epitaxy for Electroluminescent Devices

T. Honda, H. Kawanishi, K. Konno, 2002 .

Band-Gap Energy and Effective Mass of BGaN

T. Honda, H. Kawanishi, M. Tsubamoto, 1999 .

Determining lattice mismatch or the composition of a single ultra thin GaInAs layer grown on InP

H. Kawanishi, Fumi Ohsawa, Hiromasa Fujita, 1993 .

Fine Epitaxial Growth of Monolayer-Stepped GaInAs/InP Quantum Wells by Metalorganic Molecular Beam Epitaxy

H. Kawanishi, H. Ikeda, 1991 .

Design and fabrication process consideration of GaN‐based surface emitting lasers

F. Koyama, K. Iga, A. Matsutani, 1999 .

Migration and related buried epitaxy using digital epitaxial growth conditions

H. Kawanishi, I. Takahashi, M. Nakaji, 1994 .

Excitonic emission of BGaN grown on (0001) 6H–SiC by metal-organic vapor-phase epitaxy

T. Honda, H. Kawanishi, M. Kurimoto, 2000 .

Growth of BGaN/AlGaN multi-quantum-well structure by metalorganic vapor phase epitaxy

T. Takano, H. Kawanishi, M. Tsubamoto, 2000 .

Fundamental Properties of Wide Bandgap Semiconductors

I. Suemune, H. Amano, K. Hiramatsu, 2007 .

LPE growth of In0.48Ga0.52As0.01P0.99 lattice-matched to GaAs from an In melt rich in P

H. Kawanishi, K. Nishio, S. Tanaka, 1982 .

Liquid phase epitaxial growth of (AlzGa1−z)xIn1−xAsyP1−y pentanary on (100)GaAs substrate using a two‐phase solution technique

Takeshi Suzuki, H. Kawanishi, 1984 .

Epitaxial growth of high quality BAlGaN quaternary lattice matched to AlN on 6H–SiC substrate by LP-MOVPE for deep-UV emission

T. Takano, H. Kawanishi, M. Kurimoto, 2002 .

Anisotropic polarization characteristics of lasing and spontaneous surface and edge emissions from deep-ultraviolet (λ≈240nm) AlGaN multiple-quantum-well lasers

Hideo Kawanishi, Masanori Senuma, Takeaki Nukui, 2006 .

Refractive indices of BxAl1−xN (x = 0–0.012) and ByGa1−yN (y = 0–0.023) epitaxial layers in ultraviolet region

H. Kawanishi, J. Yamamoto, K. Jinen, 2003 .

Optical Gain in Bgan Lattice-Matched to (0001) 6H-SiC

T. Honda, H. Kawanishi, M. Tsubamoto, 1997 .

TM-mode lasing and anisotropic polarization properties of AlGaN multiple quantum well lasers in deep-ultraviolet spectral region

Hideo Kawanishi, Masanori Senuma, Takeaki Nukui, 2007, SPIE OPTO.

Improvement of crystal quality of AlN and AlGaN epitaxial layers by controlling the strain with the (AlN/GaN) multi-buffer layer

F. Hasegawa, H. Kawanishi, E. Niikura, 2007 .

Raman Characterization of MBE Grown (Al)GaAsN

C. T. Foxon, A. Yamamoto, K. Takahashi, 2001 .

Possibility of Strain Control in AlN Layer Grown by MOVPE on (0001) 6H-SiC with GaN/AlN Buffer

T. Honda, T. Takano, H. Kawanishi, 1999 .

GaN/BAlN heterostructure grown on a (0 0 0 1)6H–SiC substrate by metalorganic vapor phase epitaxy

T. Honda, H. Kawanishi, M. Kurimoto, 1998 .

Violet and Near-UV Light Emission from GaN/Al$_{\bf 0.08}$Ga$_{\bf 0.92}$N Injection Diode Grown on (0001) 6H-SiC Substrate by Low-Pressure Metal-Organic Vapor Phase Epitaxy

Yasuharu Suematsu, Hideo Kawanishi, Makiko Haruyama, 1995 .

Low threshold current density of GaInAsP visible injection laser diodes lattice matched with (100) GaAs emitting at 705 nm

H. Kawanishi, N. Tsuchiya, 1985 .

GaInAsP/InP Integrated Twin-Guide Lasers with First-Order Distributed Bragg Reflectors at 1.3 µm Wavelength

Katsuyuki Utaka, Yasuharu Suematsu, Hideo Kawanishi, 1980 .

Optical Characteristic of the Strain‐Controlled GaN Epitaxial Layer Grown on 6H‐SiC Substrate by an Adapting (GaN/AlN) Multibuffer Layer

T. Takano, H. Kawanishi, J. Yamamoto, 2002 .

Carbon‐doped p‐type (0001) plane AlGaN (Al = 6–55%) with high hole density

H. Kawanishi, Tatsuya Tomizawa, 2012 .

Room-temperature deep-ultraviolet lasing at 241.5 nm of AlGaN multiple-quantum-well laser

Hideo Kawanishi, Takayoshi Takano, Akihiko Horiuchi, 2004 .

GaAs-AlxGa1-xAs integrated twin-guide lasers with distributed Bragg reflectors

K. Kishino, Y. Suematsu, K. Kishino, 1977, IEEE Journal of Quantum Electronics.

LPE Growth of GaInAsP on (100)GaAs by a Two-Phase-Solution Technique

Takeshi Suzuki, H. Kawanishi, 1984 .

Direct growth of GaN on (0001) 6H-SiC by low-pressure MOVPE with a flow channel

T. Honda, H. Kawanishi, M. Tsubamoto, 1998 .

AlGaAs integrated twin-guide lasers with distributed Bragg reflectors

Y. Suematsu, K. Kishino, H. Kawanishi, 1977, IEEE Journal of Quantum Electronics.

Cathodoluminescence spectra of GaN powders deposited on glass substrate

T. Honda, H. Kimura, H. Kawanishi, 2003 .