Reiko Soejima

Corrections To "Lasing Mechanism Of InGaN-GaN-AlGaN MQW Laser Diode Grown On SiC By Low-pressure Metal~organic Vapor Phase Epitaxy"

A. Kuramata, T. Tanahashi, K. Horino, 1998 .

InGaN Laser Diode Grown on 6H–SiC Substrate Using Low-Pressure Metal Organic Vapor Phase Epitaxy

Akito Kuramata, Kazuhiko Horino, Kay Domen, 1997 .

Electron Overflow to the AlGaN p-Cladding Layer in InGaN/GaN/AlGaN MQW Laser Diodes

Akito Kuramata, Kay Domen, Toshiyuki Tanahashi, 1998 .

Properties of GaN Epitaxial Layer Grown by MOVPE on MgAl 2 O 4 Substrate

H. Sudo, A. Kuramata, T. Tanahashi, 1995 .