M. Daunov

发表

On statistically distributed inhomogeneities according to data on transverse magnetoresistance for the case of atmospheric and uniform pressure in narrow-gap n-InSb and n-CdSnAs2 semiconductors

I. Kamilov, M. M. Gadjialiev, M. Daunov, 2014 .

The nature of “heavy” electrons in the p-HgTe zero-gap semiconductor

I. Kamilov, M. Daunov, S. F. Gabibov, 2009 .

Quasi-gapless semiconductor: p-type indium arsenide

I. Kamilov, M. Daunov, A. Magomedov, 1999 .

Effect of uniform pressure on the energy spectrum of electrons and the kinetic properties of II-IV-V2 semiconductors

A. E. Ramazanova, M. Daunov, A. Magomedov, 1986 .

Using hydrostatic pressure for evaluating the effect of a fluctuating potential on the energy spectrum of charge carriers in crystalline semiconductors

I. Kamilov, M. Daunov, S. F. Gabibov, 2008 .

Electron Metal-Dielectric Phase Transitions in Semiconductors under Pressure

I. Kamilov, M. Daunov, S. F. Gabibov, 2004 .

Concept of mobility threshold: The Ioffe-Regel rule

I. Kamilov, M. Daunov, S. F. Gabibov, 2010 .

Electrical properties of zinc oxide under uniform pressure up to 25 GPa

M. Daunov, A. Musaev, P. P. Khokhlachev, 2009 .

Electrical and thermoelectric properties of ZnO under atmospheric and hydrostatic pressure

R. Arslanov, M. M. Gadjialiev, M. Daunov, 2006 .

Experimental determination of the constants of absolute volume deformation potentials at band edges in semiconductors

I. Kamilov, M. Daunov, S. F. Gabibov, 2004 .